A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

Provided is a rectifier device for a vehicle alternator including a rectifying element for rectifying in an alternator. The rectifying element has an Enhanced Field Effect Semiconductor Diode (EFESD). The EFESD includes a lateral conducting silicide structure and a field effect junction structure integrating side by side. A rectifier, a generator device, and a powertrain for a vehicle are also provided.

A method is provided for fabricating an encapsulated emissive element. Beginning with a growth substrate, a plurality of emissive elements is formed. The growth substrate top surface is conformally coated with an encapsulation material. The encapsulation material may be photoresist, a polymer, a light reflective material, or a light absorbing material. The encapsulant is patterned to form fluidic assembly keys having a profile differing from the emissive element profiles. In one aspect, prior to separating the emissive elements from the handling substrate, a fluidic assembly keel or post is formed on each emissive element bottom surface. In one variation, the emissive elements have a horizontal profile. The fluidic assembly key has horizontal profile differing from the emissive element horizontal profile useful in selectively depositing different types of emissive elements during fluidic assembly. In another aspect, the emissive elements and fluidic assembly keys have differing vertical profiles useful in preventing detrapment.

Various embodiments of a die carrier package and a method of forming such package are disclosed. The package includes one or more dies disposed within a cavity of a carrier substrate, where a first die contact of one or more of the dies is electrically connected to a first die pad disposed on a recessed surface of the cavity, and a second die contact of one or more of the dies is electrically connected to a second die pad also disposed on the recessed surface. The first and second die pads are electrically connected to first and second package contacts respectively. The first and second package contacts are disposed on a first major surface of the carrier substrate adjacent the cavity.

An electronics package is disclosed. The electronics package includes a first radio frequency (RF) substrate layer, a second RF substrate layer, and a plurality of conductive layers disposed adjacent to at least one of the first RF substrate layer and the second RF substrate layer and including an inner conductive layer disposed between and adjacent to both the first RF substrate layer and the second RF substrate layer. The inner conductive layer bonds the first RF substrate layer to the second RF substrate layer. The electronics package also includes a plurality of conductive interconnects extending through the first RF substrate layer and the second RF substrate layer and electrically coupled between at least two of the plurality of conductive layers.

A direct bonded heterogeneous integration (DBHi) device includes a substrate including a trench formed in a top surface of the substrate. The DBHi device further includes a first chip coupled to the substrate on a first side of the trench by a plurality of first interconnects. The DBHi device further includes a second chip coupled to the substrate on a second side of the trench by a plurality of second interconnects. The second side of the trench is arranged opposite the first side of the trench. The DBHi device further includes a bridge coupled to the first chip and to the second chip by a plurality of third interconnects such that the bridge is suspended in the trench. The DBHi device further includes a non-conductive paste material surrounding the plurality of third interconnects to further couple the bridge to the first chip and to the second chip.

In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

A substrate having an electronic component embedded therein includes a core substrate including first and second wiring layers disposed on different levels and one or more insulating layers disposed between the first and second wiring layers, having a cavity in which a stopper layer is disposed on a bottom surface of the cavity, and including a groove disposed around the stopper layer on the bottom surface; an electronic component disposed on the stopper layer in the cavity; an insulating material covering at least a portion of each of the core substrate and the electronic component and disposed in at least a portion of each of the cavity and the groove; and a third wiring layer disposed on the insulating material. The stopper layer protrudes on the bottom surface.

A micro-device structure includes a substrate having a substrate surface and a substrate contact disposed on or in the substrate surface, a cavity extending into the substrate from the substrate surface, a micro-device disposed in the cavity, the micro-device comprising a micro-device contact, a planarization layer disposed over at least a portion of the substrate, and an electrode disposed at least partially over or on the planarization layer and electrically connected to the micro-device contact.

Disclosed are a micro LED group substrate provided with a plurality of micro LEDs, a method of manufacturing the same, a micro LED display panel, and a method of manufacturing the same. More particularly, disclosed are a micro LED group substrate provided with a plurality of micro LEDs, a method of manufacturing the same, a micro LED display panel, and a method of manufacturing the same, wherein the need for a micro LED replacement process is eliminated.