Provided is a semiconductor device capable of maintaining the flatness of a glass substrate and sufficiently protecting an end portion of the glass substrate. A semiconductor device according to one aspect of the present disclosure includes: a glass substrate including a first surface, a second surface opposite to the first surface, and a first side surface between the first surface and the second surface; wirings provided on the first and second surfaces; a first insulating film that covers the first surface; a second insulating film that covers the second surface; and a third insulating film that covers the first side surface, the third insulating film being continuous with at least one of the first and second insulating films.

An integrated circuit (IC) package includes a first substrate having a backside surface and a top surface with a cavity disposed therein. The cavity has a floor defining a front side surface. A plurality of first electroconductive contacts are disposed on the front side surface, and a plurality of second electroconductive contacts are disposed on the back side surface. A plurality of first electroconductive elements penetrate through the first substrate and couple selected ones of the first and second electroconductive contacts to each other. A first die containing an IC is electroconductively coupled to corresponding ones of the first electroconductive contacts. A second substrate has a bottom surface that is sealingly attached to the top surface of the first substrate, and a dielectric material is disposed in the cavity so as to encapsulate the first die.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

A semiconductor package includes a silicon substrate with an active surface and an inactive surface. A semiconductor device, such as an image, light, or optical sensor, is formed in the active surface and disposed on the substrate. A glass plate is coupled to the substrate with adhesive. The glass plate includes a sensor area that corresponds to the area of the semiconductor device and holes through the glass plate that are generally positioned around the sensor area of the glass plate. During formation of the package, the holes through the glass plate allow gas released by the adhesive to escape the package and prevent formation of a gas bubble.

An integrated circuit (IC) package includes a first substrate having a backside surface and a top surface with a cavity disposed therein. The cavity has a floor defining a front side surface. A plurality of first electroconductive contacts are disposed on the front side surface, and a plurality of second electroconductive contacts are disposed on the back side surface. A plurality of first electroconductive elements penetrate through the first substrate and couple selected ones of the first and second electroconductive contacts to each other. A first die containing an IC is electroconductively coupled to corresponding ones of the first electroconductive contacts. A second substrate has a bottom surface that is sealingly attached to the top surface of the first substrate, and a dielectric material is disposed in the cavity so as to encapsulate the first die.

The present technology relates to a solid-state image pickup device, a manufacturing method thereof, and an electronic apparatus that make it possible to increase the yield. The solid-state image pickup device includes an optical sensor including a light receiving unit and a cover glass provided on the light receiving unit's side of the optical sensor. The cover glass includes a chamfered portion at a ridge portion that surrounds a surface on the optical sensor's side. The present technology can be applied to, for example, a package for a CMOS image sensor.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

Packaged semiconductor components having substantially rigid support member are disclosed. The packages can include a semiconductor die and a support member proximate to the semiconductor die. The support member is at least substantially rigid. The packages can further include an adhesive between the support member and the semiconductor die and adhesively attaching the support member to the semiconductor die. The packages can also include a substrate carrying the semiconductor die and the support member attached to the semiconductor die.

Packaged semiconductor components having substantially rigid support member are disclosed. The packages can include a semiconductor die and a support member proximate to the semiconductor die. The support member is at least substantially rigid. The packages can further include an adhesive between the support member and the semiconductor die and adhesively attaching the support member to the semiconductor die. The packages can also include a substrate carrying the semiconductor die and the support member attached to the semiconductor die.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.