A method for forming a contact connection between a chip-and a conductor material formed on a non-conductive substrate, the chip being arranged on the substrate or on another conductor material track, a sinter paste consisting of at least 40% silver or copper being applied to respective chip contact surfaces of the chip and the conductor material track, a contact conductor being immersed in the sinter paste on the chip contact surface and in the sinter paste on the conductor material track, and the contact connection being formed by sintering the sinter paste by means of laser energy.

Provided are a solar cell having a good conversion efficiency in which damage to a p-n junction structure is prevented when an antireflection film is removed, and a method of manufacturing such a solar cell.

A laser processing method for a substrate with a device formed on a front surface thereof and including an electrode pad, the method including: a laser beam applying step of applying the laser beam to the back surface of the substrate to form a fine hole in the substrate at a position corresponding to the electrode pad; a detecting step of detecting first plasma light emitted from the substrate at the same time that the fine hole is formed in the substrate by the laser beam applied thereto, and second plasma light emitted from the electrode pad; and a laser beam irradiation finishing step of stopping application of the laser beam when the second plasma light is detected in the detecting step. A peak power density of the laser beam to be applied is set in a range from 175 GW/cm.sup.2 or less to 100 GW/cm.sup.2 or more.

A laser processing method for a substrate with a device formed on a front surface thereof and including an electrode pad, the method including: a laser beam applying step of applying the laser beam to the back surface of the substrate to form a fine hole in the substrate at a position corresponding to the electrode pad; a detecting step of detecting first plasma light emitted from the substrate at the same time that the fine hole is formed in the substrate by the laser beam applied thereto, and second plasma light emitted from the electrode pad; and a laser beam irradiation finishing step of stopping application of the laser beam when the second plasma light is detected in the detecting step. A peak power density of the laser beam to be applied is set in a range from 175 GW/cm.sup.2 or less to 100 GW/cm.sup.2 or more.

A laser welding method using a laser welding jig having a plurality of pressing parts, includes a step of placing a second member on a first member; a step of pressing the second member with the plurality of pressing parts in a direction toward the first member to thereby form a gap between the first member and the second member at most 300 m; and a first welding step of laser-welding the first member and the second member by irradiating on a surface of the second member at a location between the pressing parts with laser light while conducting the step of pressing.

Provided are a solar cell having a good conversion efficiency in which damage to a p-n junction structure is prevented when an antireflection film is removed, and a method of manufacturing such a solar cell.

A method is for making a semiconductor device having an IC die on a substrate with electric contact formations for the IC die and the substrate. The method may include printing ink including electrically conductive nanoparticles, onto the electric contact formations.

A method for attaching an integrated circuit (IC) to an IC package substrate includes forming a solder bump on a bond pad of an IC die, forming a solder-wetting protrusion on a bond pad of an IC package substrate, and bonding the solder bump of the IC die to the solder-wetting protrusion of the IC package substrate.