A display device includes a pixel electrode disposed on a substrate and including a reflective electrode layer and an upper electrode layer, a contact electrode disposed on the pixel electrode, light-emitting elements disposed on the contact electrode and disposed perpendicular to the pixel electrode, a planarization layer disposed on the pixel electrode, the planarization layer filling a space between the light-emitting elements, and a common electrode disposed on the planarization layer and the light-emitting elements, and a size of the contact electrode is equal to a size of each of the light-emitting elements in a plan view, and the upper electrode layer is disposed on the reflective electrode layer and is in a polycrystalline phase.

A light-emitting device includes a semiconductor diode structure, a surface-lattice-mode (SLR) structure against the back of the diode structure, and a reflector against the back of the SLR structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The SLR structure includes an index-matched layer, a lower-index layer, and scattering elements, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating surface-lattice-resonance modes supported by the SLR structure, to propagate perpendicularly toward the device exit surface.

A display device, according to an embodiment of the present invention, comprises a semiconductor light-emitting element, the semiconductor light-emitting element comprising: a first conductive electrode; an undoped semiconductor layer formed on the first conductive electrode; a first conductive semiconductor layer formed on the undoped semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a second conductive electrode formed on the second conductive semiconductor layer; wherein the first conductive electrode is formed to cover a part of a side surface of the first conductive semiconductor layer.

A radiation-emitting semiconductor chip may include a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, a first metallic mirror with which charge carriers can be embedded into the first semiconductor layer, a first metallic contact layer disposed atop the first metallic mirror, and a second metallic contact layer disposed atop the first metallic contact layer. A first seed layer may be disposed between the first metallic contact layer and the first metallic mirror. A second seed layer may be disposed between the first metallic contact layer and the second metallic contact layer. The radiation-emitting semiconductor chip may include a radiation exit face having a multitude of emission regions. The first metallic mirror may have a multitude of cutouts that each define a lateral extent of one of the emission regions.

Micro light-emitting diodes (LED) are distanced from a mirror layer that reflects light emitted by the LEDs to increase the light extraction efficiency of the LEDs. In some embodiments, micro LEDs are electrically coupled to the mirror layer by vias positioned at an end of the LED positioned proximate to the mirror layer. In other embodiments, a conductive layer is positioned adjacent to an electrode of multiple micro LEDs and a pillar contacts the conductive layer at a location where the conductive layer is not positioned adjacent to a micro LED electrode. Vias and pillars allow the mirror height to be increased relative to structures where micro LEDs extend into a mirror layer. Increasing the mirror height can reduce the amount of destructive interference at a release layer caused by reflections of LED-emitted light by the mirror layer when the release layer is ablated via laser irradiation.

A display device includes pixel electrodes disposed on a substrate, at least one light-emitting element disposed on each of the pixel electrodes, a planarization layer disposed on the pixel electrodes and filling a space between the at least one light-emitting element, and a common electrode disposed on the planarization layer and the at least one light-emitting element. Each of the light-emitting elements is arranged perpendicular to a top face of each of the pixel electrodes, at least one of the pixel electrodes includes a protrusion protruding toward an adjacent one of the pixel electrodes, and the protrusion overlaps the light-emitting element in a plan view.

A display device and a method of fabricating the same is provided. A display device includes first and second pixel circuit units spaced apart from each other, a first pixel electrode on the first pixel circuit unit, a second pixel electrode on the second pixel circuit unit, a first light-emitting element electrically connected to the first pixel electrode, and for emitting first light, a second light-emitting element electrically connected to the second pixel electrode, and for emitting second light, a first pixel connecting electrode between the first pixel electrode and the first light-emitting element, and a second pixel connecting electrode between the second pixel electrode and the second light-emitting element, wherein the first pixel electrode overlaps with the first light-emitting element, and wherein the second pixel electrode does not overlap with the second light-emitting element.

A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.

A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.