A light-emitting device includes a semiconductor diode structure, a surface-lattice-mode (SLR) structure against the back of the diode structure, and a reflector against the back of the SLR structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The SLR structure includes an index-matched layer, a lower-index layer, and scattering elements, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating surface-lattice-resonance modes supported by the SLR structure, to propagate perpendicularly toward the device exit surface.

In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 μm and 200 μm inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO.sub.3/2 units.

A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.

A system includes a display. The display includes an array of LEDs covered by a transparent material. The array of LEDs includes a plurality of first, second, third, and fourth LEDs respectively configured to emit red, green, blue, and violet light. The red, green, and blue light from the first, second, and third LEDs is visible to human eye. Violet light from the fourth LEDs is invisible to human eye. The system includes a photocatalytic coating disposed on the transparent material. The photocatalytic coating includes a photo-catalyst responsive to ultraviolet radiation present in sunlight and to the violet light emitted by the fourth LEDs in the array of LEDs. The system includes a controller configured to selectively turn on the fourth LEDs to activate the photo-catalyst in the photocatalytic coating disposed on the transparent material.

A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; a current blocking layer disposed on the first surface, including a sidewall; and a transparent conductive layer disposed on the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is less than 3 μm; and wherein a retract distance of the transparent conductive layer with respect to an edge of the sidewall of the current blocking layer is less than 3 μm.

Disclosed is a flip-chip LED, comprising: an epitaxial layer on a surface of a substrate, and comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in sequence from bottom to top, wherein a mesa in the epitaxial layer has an upper surface provided by the second semiconductor layer, a lower surface provided by the first semiconductor layer, and a side surface connecting the upper surface and the lower surface; a first insulating layer covering the side surface of the mesa, part of the upper surface and part of the lower surface; and a reflective layer on the second semiconductor layer. A manufacturing method of a flip-chip LED is also provided, an insulating layer covers the side surface of the mesa to protect the mesa immediately after the mesa is formed, to avoid abnormal phenomena and improve yield of the flip-chip LED.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

A method of manufacturing a light-emitting device includes: providing a substrate; forming a light-emitting structure comprising an active layer on the substrate; forming a protective layer having a first thickness on the light-emitting structure; etching the protective layer such that the protective layer has a second thickness less than the first thickness; and patterning the protective layer.

A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

A method of fabricating and transferring high quality and manufacturable light-emitting devices, such as micro-sized light-emitting diodes (μLEDs), edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs), using epitaxial later over-growth (ELO) and isolation methods. III-nitride semiconductor layers are grown on a host substrate using a growth restrict mask, and the III-nitride semiconductor layers on wings of the ELO are then made into the light-emitting devices. The devices are isolated from the host substrate to a thickness equivalent to the growth restrict mask and then transferred or lifted from of the host substrate. Back-end processing of the devices is then performed, such as attaching distributed Bragg reflector (DBR) mirrors, forming cladding layers, and/or adding heatsinks.