Patent classifications
H01L2933/005
STRUCTURES FOR MICRO LED LASER RELEASE
Micro light-emitting diodes (LED) are distanced from a mirror layer that reflects light emitted by the LEDs to increase the light extraction efficiency of the LEDs. In some embodiments, micro LEDs are electrically coupled to the mirror layer by vias positioned at an end of the LED positioned proximate to the mirror layer. In other embodiments, a conductive layer is positioned adjacent to an electrode of multiple micro LEDs and a pillar contacts the conductive layer at a location where the conductive layer is not positioned adjacent to a micro LED electrode. Vias and pillars allow the mirror height to be increased relative to structures where micro LEDs extend into a mirror layer. Increasing the mirror height can reduce the amount of destructive interference at a release layer caused by reflections of LED-emitted light by the mirror layer when the release layer is ablated via laser irradiation.
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device includes a substrate, a pixel, an encapsulation layer, a pad electrode, and a circuit board. The substrate includes a display area and a pad area positioned outside the display area. The pixel is disposed on the display area. The encapsulation layer covers the pixel. The pad electrode is disposed on the pad area. A first surface of the pad electrode contains fluorine, overlaps a second surface of the pad electrode, and is positioned farther from the substrate than the second surface of the pad electrode is. The circuit board overlaps the pad electrode.
METHOD FOR MANUFACTURING ELECTRONIC DEVICE
A method for manufacturing an electronic device includes: providing a base layer; forming a patterned circuit layer on the base layer, the patterned circuit layer having a first opening; placing an electronic element on the patterned circuit layer; and patterning the base layer to form a second opening which is at least partially overlapped with the first opening. The step of placing the electronic element is performed after the step of forming the patterned circuit layer.
Light-emitting device having a recess defined by a base and lateral surfaces of a first and a second wall
A manufacturing method of a light-emitting device, including the steps of: preparing a substrate including a base, a first wall formed on an upper surface of the base, and a recess defined by a lateral surface of the first wall as an inside lateral surface and the upper surface of the base as a bottom surface; mounting a light-emitting element on the bottom surface of the recess; disposing a sealing member which covers the light-emitting element and the first wall; forming a groove section extending from an upper surface of the sealing member to the first wall by removing the sealing member on the first wall; disposing a second wall inside the groove section; and cutting the second wall and the substrate at a position including the second wall.
Display substrate, preparation method thereof, and display device
A display substrate includes a drive substrate and a welding pad provided on the drive substrate and electrically connected with the drive substrate. The display substrate further includes an insulating construction layer provided on the welding pad. The insulating construction layer is provided with a groove for exposing the welding pad. A bonding material is accommodated in the groove, and a micro light emitting diode is electrically connected with the welding pad through the bonding material.
Light emitting device, backlight, and display panel with reflective layer
The present disclosure provides a light emitting device including a substrate, a conductive layer, first and second reflective layers, a light emitting element, and an encapsulation layer. The conductive layer is disposed on the substrate. The first reflective layer covers the conductive layer and has an opening exposing a portion of the conductive layer. The light emitting element is disposed in the opening and electrically connects to the conductive layer. The second reflective layer is disposed on the first reflective layer and surrounds the light emitting element, and the second reflective layer has an outer diameter. The encapsulation layer covers the light emitting element. There is a height between a highest point of the encapsulation layer and an upper surface of the first reflective layer, and the height is 0.1 to 0.5 times the outer diameter. The present disclosure also provides a backlight and a display panel.
HOUSING, OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND PRODUCTION METHOD
The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.
Light-emitting device having a higher luminance
A light-emitting device includes a light-emitting element, a light-transmissive member having an upper surface in a rectangular shape and a lower surface to be bonded to the light-emitting element, and a covering member disposed to cover lateral surfaces of the light-transmissive member and lateral surfaces of the light-emitting element such that the upper surface of the light-transmissive member is exposed. The light-transmissive member includes a main portion that constitutes the upper surface in the rectangular shape and a peripheral portion that is positioned around the main portion and has a smaller thickness than the main portion. In lateral surfaces of the peripheral portion, recesses are formed each of which is positioned at a location of a corresponding one of corners of the rectangular shape, and is depressed toward the main portion.
Selectively bonding light-emitting devices via a pulsed laser
The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.
Fabrication of thin-film encapsulation layer for light-emitting device
An ink jet process is used to deposit a material layer to a desired thickness. Layout data is converted to per-cell grayscale values, each representing ink volume to be locally delivered. The grayscale values are used to generate a halftone pattern to deliver variable ink volume (and thickness) to the substrate. The halftoning provides for a relatively continuous layer (e.g., without unintended gaps or holes) while providing for variable volume and, thus, contributes to variable ink/material buildup to achieve desired thickness. The ink is jetted as liquid or aerosol that suspends material used to form the material layer, for example, an organic material used to form an encapsulation layer for a flat panel device. The deposited layer is then cured or otherwise finished to complete the process.