The end-face incident type semiconductor light receiving device has a first light absorbing region on the main surface side of the semiconductor substrate and causes light incident from the end-face of the semiconductor substrate to enter the first light absorbing region by reflection or refraction, and the first reflective section is provided on the main surface side of the semiconductor substrate to cause light transmitted through the light absorbing region to enter the first light absorbing region, and a single second reflective section is provided on the back surface for causing the light reflected by the first reflective section and transmitted through the first light absorbing region to reflect directly toward the first light absorbing region.

A semiconductor device is provided, which includes a substrate, a first semiconductor structure, a plurality of first holes, a first dielectric structure and a second semiconductor structure. The first semiconductor structure is located on the substrate. The first holes are periodically arranged in the first semiconductor structure. The first dielectric structure is filled in one or more of the first holes. The second semiconductor structure is located on the first semiconductor structure.

The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.

A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

A first n-type contact layer, a second n-type contact layer, a multiplication layer, an electric field control layer, a light absorbing layer, and a p-type contact layer are layered in this order on a substrate. The second n-type contact layer is formed between the first n-type contact layer and the light absorbing layer, is made to have an area smaller than that of the light absorbing layer in a plan view, and is disposed inside the light absorbing layer in a plan view.

An optical semiconductor element having a mesa portion includes a substrate and semiconductor layers on the substrate. The optical semiconductor element further includes a first contact electrode, a second contact electrode on the semiconductor layer, first and second lead-out wires connected to the first and second contact electrodes, respectively, and an insulating film covering at least an upper surface of the semiconductor layer and the second contact electrode. The second lead-out wire is connected to the second contact electrode in an opening of the insulating film. An outer peripheral end of the second contact electrode in at least a portion where the second contact electrode and the second lead-out wire are connected is above and outside an outer peripheral end of a connection portion with the semiconductor layer, and an inner peripheral end is above and inside an inner peripheral end of the connection portion with the semiconductor layer.

Provided is an AlGaN unipolar carrier solar-blind ultraviolet detector that is based on the AlGaN polarization effect and that uses the double heterojunction of the p-AlzGa1-zN/i-AlyGa1-yN/n-AlxGa1-xN (0.45=<x,z<y) as the main structure of the detector. It makes full use of the polarization built-in electric field pointing from n-type AlGaN to p-type AlGaN to enhance the electric field strength of the i-type absorption region and enhance the efficiency of carrier absorption and separation. At the same time, the valence band step of the p-AlzGa1-zN/i-AlyGa1-yN heterojunction is used to effectively restrict holes from entering the absorption region to recombine with electrons, thereby increasing the carrier lifetime. Furthermore, during device manufacturing the structure is such designed that makes it difficult for photo-generated holes to participate in the photoconductivity so as to realize unipolar conduction of electrons, thereby obtaining a high response speed and high gain current.

A light sensing device includes a substrate, a gate electrode, a shielding electrode, a insulating layer, a semiconductor layer, a source electrode, and a drain electrode. The gate electrode and the shielding electrode are disposed over the substrate and spaced apart from each other. The insulating layer is disposed over the gate electrode and the shielding electrode. The semiconductor layer is disposed over the insulating layer. The source and drain electrodes are respectively connected to the semiconductor layer, and the semiconductor layer has a channel region between the source and drain electrodes. The channel region is divided into a first region adjacent to the drain electrode and overlapping the gate electrode and a second region adjacent to the source electrode and not overlapping the gate electrode, and the second region partially overlaps the shielding electrode.

An optical semiconductor element includes: a substrate; a semiconductor stacked body including an optical layer, a first semiconductor layer, and a second semiconductor layer, the optical layer and the first semiconductor layer forming a mesa portion and the second semiconductor layer including an outer portion; a first electrode formed on the mesa portion and connected to the first semiconductor layer; a first insulating layer formed on the first electrode; a second electrode including a first portion connected to the second semiconductor layer at the outer portion and a second portion arranged on the first insulating layer so as to overlap the first electrode; and a second insulating layer formed on the second electrode. An opening for exposing the first electrode is formed in the first insulating layer. An opening for exposing the second portion of the second electrode is formed in the second insulating layer.