H01L31/02725

Quantum dots and devices including the same

A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn.sup.2+, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn.sup.2+, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.

Liquid semiconductor-halogen based electronics

According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.

Solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system

A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer directly in contact with the p-electrode, an n-type layer, and an n-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. A region from an interface between the p-type light-absorbing layer and the p-electrode to 10 nm to 100 nm from the interface in a direction of the n-type layer is a p+ type region including a p-type dopant.

Transparent Conducting Layers and Photovoltaic Devices Including the Same

Photovoltaic devices having transparent contact layers are described herein.

QUANTUM DOTS AND DEVICES INCLUDING THE SAME
20210183999 · 2021-06-17 ·

A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn.sup.2+, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn.sup.2+, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.

METHOD FOR FORMING SOLAR CELL ELECTRODE AND SOLAR CELL
20200203538 · 2020-06-25 ·

A method for forming solar cell electrodes and a solar cell, the method including forming a first electrode layer by applying a first solar cell electrode composition, the first solar cell electrode composition including a conductive powder, a first glass frit, and an organic vehicle; forming a second electrode layer by applying a second solar cell electrode composition onto the first electrode layer, the second solar cell electrode composition including the conductive powder, a second glass frit, and the organic vehicle, the second glass frit being different from the first glass frit and containing about 15 mol % to about 30 mol % of silicon (Si) oxide; and baking the first electrode layer and the second electrode layer.

SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE, AND PHOTOVOLTAIC POWER GENERATION SYSTEM

A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer directly in contact with the p-electrode, an n-type layer, and an n-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. A region from an interface between the p-type light-absorbing layer and the p-electrode to 10 nm to 100 nm from the interface in a direction of the n-type layer is a p+ type region including a p-type dopant.

Interaction characteristics from a plurality of pixels

One embodiment provides a method, including: receiving a plurality of responses to an interaction occurring within a photon detector pixel array, wherein the photon detector pixel array comprises a plurality of pixels; identifying a subset of the plurality of pixels associated with the interaction, wherein each of the subset of the plurality of pixels corresponds to at least one of the plurality of responses; determining, from the plurality of responses, a characteristic of the interaction, wherein the characteristic comprises at least one of: time, position, and energy of the interaction; recording the interaction associated with the at least one determined characteristic; collecting a plurality of recorded interactions and associated determined characteristics; selecting a subset of the plurality of recorded interactions, wherein the subset selection is based upon a restricted range of at least one determined characteristic; and forming an image from the selected subset of the plurality of recorded interactions. Other aspects are described and claimed.

INTERACTION CHARACTERISTICS FROM A PLURALITY OF PIXELS
20190285469 · 2019-09-19 ·

One embodiment provides a method, including: receiving a plurality of responses to an interaction occurring within a photon detector pixel array, wherein the photon detector pixel array comprises a plurality of pixels; identifying a subset of the plurality of pixels associated with the interaction, wherein each of the subset of the plurality of pixels corresponds to at least one of the plurality of responses; determining, from the plurality of responses, a characteristic of the interaction, wherein the characteristic comprises at least one of: time, position, and energy of the interaction; recording the interaction associated with the at least one determined characteristic; collecting a plurality of recorded interactions and associated determined characteristics; selecting a subset of the plurality of recorded interactions, wherein the subset selection is based upon a restricted range of at least one determined characteristic; and forming an image from the selected subset of the plurality of recorded interactions. Other aspects are described and claimed.

Interaction characteristics from a plurality of pixels

One embodiment provides a method, including: receiving a plurality of responses to an interaction occurring within a photon detector pixel array, wherein the photon detector pixel array comprises a plurality of pixels; identifying a subset of the plurality of pixels associated with the interaction, wherein each of the subset of the plurality of pixels corresponds to at least one of the plurality of responses; and determining, from the plurality of responses, a characteristic of the interaction, wherein the characteristic comprises at least one of: time, position, and energy of the interaction. Other aspects are described and claimed.