Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) (14) made primarily of p-type ZnO fine particles (931) is formed. P-side electrodes (16) are formed at a plurality of regions on the p-type layer (14). A thin insulating layer (18) is formed between an n-type layer (13) and the p-type layer (14). In the insulating layer (18), openings are formed at regions A each not overlapping the p-side electrodes (16) and being apart from them in a plan view. In the configuration, by thus making the p-side electrodes (16) apart from the regions A, the length of a current path in the p-type layer (14) can be made substantially larger than the layer thickness. Accordingly, even when n-type ZnO fine particles (932) are incorporated in the p-type layer (14), it is possible to interpose some of the p-type ZnO fine particles (931) along a leakage current path caused by the incorporation, and thereby cut off the current path.

Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) (14) made primarily of p-type ZnO fine particles (931) is formed. P-side electrodes (16) are formed at a plurality of regions on the p-type layer (14). A thin insulating layer (18) is formed between an n-type layer (13) and the p-type layer (14). In the insulating layer (18), openings are formed at regions A each not overlapping the p-side electrodes (16) and being apart from them in a plan view. In the configuration, by thus making the p-side electrodes (16) apart from the regions A, the length of a current path in the p-type layer (14) can be made substantially larger than the layer thickness. Accordingly, even when n-type ZnO fine particles (932) are incorporated in the p-type layer (14), it is possible to interpose some of the p-type ZnO fine particles (931) along a leakage current path caused by the incorporation, and thereby cut off the current path.

According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 μs. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.

According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 μs. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.

Systems and methods for thermal radiation detection utilizing a thermal radiation detection system are provided. The thermal radiation detection system includes one or more mercury-cadmium-telluride (HgCdTe)-based photodiode infrared detectors or Indium Antimonide (InSb)-based photodiode infrared detectors and a temperature sensing circuit. The temperature sensing circuit is configured to generate signals correlated to the temperatures of one or more of the plurality of infrared sensor elements. The thermal radiation detection system also includes a signal processing circuit.

Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed.

Disclosed herein are CdTe-based solar cells that are successfully removed from their glass superstrate through a combination of lamination to a backsheet followed by thermal shock.

A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.

A method of fabricating a semiconductor device includes implanting dopants into a silicon substrate, and performing a thermal anneal process that activates the implanted dopants. In response to activating the implanted dopants, a layer of ultra-thin single-crystal silicon is formed in a portion of the silicon substrate. The method further includes performing a heteroepitaxy process to grow a semiconductor material from the layer of ultra-thin single-crystal silicon.

A bio-inspired imaging device mimicking visual adaptation of human vision provides a large dynamic range in imaging an image. The device employs a neuromorphic vision sensor realized with phototransistors each being a field-effect transistor, a channel layer of which is an atomically-thin layer of two-dimensional semiconductor material. The channel layer is intentionally formed with defects trap states for trapping a portion of charge carriers generated by a light beam incident on the phototransistor such that intensity information of the light beam is memorized. A gate-source voltage directs the defects trap states to de-trap the trapped portion of charge carriers or to further trap an additional portion of charge carriers, allowing the phototransistor to exhibit a time-dependent excitation or inhibition effect on drain current to thereby enable the imaging sensor to mimic scotopic or photopic adaptation in imaging the image.