A solid-state device, and use and formation thereof. The device includes a light emitter (102) that emits light with abeam propagation direction and includes an emitter epitaxial layer stack (940); a light routing medium (103) in optical communication with the light emitter; and a light detector (104) in optical communication with the light routing medium, which detects light emitted by the light emitter and includes a detector epitaxial stack (945). The light emitter and detector are monolithically formed on a semiconductor substrate. The emitter and detector epitaxial layer stacks include different pluralities of layers of a single epitaxial layer stack. The beam propagation direction is either in-plane with the single epitaxial layer stack and the light detector detects light out of plane with the single epitaxial layer stack, or out of plane with the single epitaxial layer stack and the light detector detects light in plane with the single epitaxial layer stack.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

A monolithic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of one another in the specified order, and the first subcell forms the top subcell and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer and the emitter doping in the second subcell is lower than the base doping.

A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideb and optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

An InGaN solar photovoltaic device includes a base band, a light absorption layer, an n-type ZnO electron transport layer, and a p-type InN hole transport layer, the p-type InN hole transport layer is on a front side of the light absorption layer, and the base band and the n-type ZnO electron transport layer are on a back side of the light absorption layer, wherein the light absorption layer includes a p-type In.sub.xGa.sub.1-XN layer and an n-type In.sub.yGa.sub.1-yN layer which are superposed, where 0.2<x<0.4 and 0.2<y<0.4, and the p-type In.sub.xGa.sub.1-XN layer and the n-type In.sub.yGa.sub.1-yN layer are doped with Si and Mg. The InGaN solar photovoltaic device with a flexible multi-layer structure features high in energy conversion efficiency, low in cost, simple in manufacturing, and easy to implement, and thus has a broad prospect in application.

A semiconductor device includes a dielectric layer, a first trench located in the dielectric layer, a first semiconductor located in the first trench, a second semiconductor layer and an electrical connector. The dielectric layer has a first surface. The second semiconductor layer includes an active portion connecting the first semiconductor layer, and the electrical connector is located on the first surface and connects the second semiconductor layer.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).