Provided is a photoelectric detector, comprising: a silicon layer (110), the silicon layer (110) comprising a first-doping-type doped region (111); a germanium layer (120) in contact with the silicon layer (110), the germanium layer (120) comprising a second-doping-type doped region (121); and a silicon nitride waveguide (130), the silicon nitride waveguide (130) being arranged surrounding the germanium layer (120) along the extension directions of at least three side walls of the germanium layer (120), wherein the silicon nitride waveguide (130) is used for transmitting an optical signal and coupling the optical signal to the germanium layer (120), and the germanium layer (120) is used for detecting the optical signal and converting the optical signal into an electrical signal.

Provided is a photoelectric detector, comprising: a silicon layer (110), the silicon layer (110) comprising a first-doping-type doped region (111); a germanium layer (120) in contact with the silicon layer (110), the germanium layer (120) comprising a second-doping-type doped region (121); and a silicon nitride waveguide (130), the silicon nitride waveguide (130) being arranged surrounding the germanium layer (120) along the extension directions of at least three side walls of the germanium layer (120), wherein the silicon nitride waveguide (130) is used for transmitting an optical signal and coupling the optical signal to the germanium layer (120), and the germanium layer (120) is used for detecting the optical signal and converting the optical signal into an electrical signal.

A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.

The present application relates to semiconductor photodetectors, in particular to a silicon carbide-based UV-visible-NIR full-spectrum-responsive photodetector and a method for fabricating the same. The photodetector includes a silicon carbide substrate, and metal counter electrodes and a surface plasmon polariton nanostructure arranged thereon. The silicon carbide substrate and the metal counter electrodes constitute a metal-semiconductor-metal photodetector with coplanar electrodes. When the ultraviolet light is input, free carriers directly generated in silicon carbide are collected by an external circuit to generate electrical signals. When the visible light is input, hot carriers generated in the surface plasmon polariton nanostructure tunnel into the silicon carbide semiconductor to become free carriers to generate electrical signals.

A method for producing a silicon carbide component includes forming a silicon carbide layer on an initial wafer, forming a doping region of the silicon carbide component to be produced in the silicon carbide layer, and forming an electrically conductive contact structure of the silicon carbide component to be produced on a surface of the silicon carbide layer. The electrically conductive contact structure electrically contacts the doping region. Furthermore, the method includes splitting the silicon carbide layer or the initial wafer after forming the electrically conductive contact structure, such that a silicon carbide substrate at least of the silicon carbide component to be produced is split off.

The present disclosure is directed to methods for producing a photovoltaic junction that can include coating a bare junction with a composition. In one embodiment, the composition includes a plurality of quantum dots to create a film; exposing the film to a ligand to create a first layer; coating the first layer with the composition to form a film on the first layer; and exposing the film on the first layer to the ligand to create a second layer.

The present disclosure is directed to methods for producing a photovoltaic junction that can include coating a bare junction with a composition. In one embodiment, the composition includes a plurality of quantum dots to create a film; exposing the film to a ligand to create a first layer; coating the first layer with the composition to form a film on the first layer; and exposing the film on the first layer to the ligand to create a second layer.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.