The invention relates to a photo bode type structure (comprising: a support (100) including at least one semiconductor layer, the semiconductor layer (120) including of a first semiconductor zone (10) of a first type of conductivity and a mesa (130) in contact with the semiconductor layer (120). The mesa (130) includes of a second semiconductor zone (20), known as absorption zone, said second semiconductor zone (20) being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone (30) is depleted in the absence of polarization of the structure (1). The structure (1) further comprises a third semiconductor zone (30) of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone (30) is interposed between the first and the second semiconductor zones (10, 20) while being at least partially arranged in the semiconductor layer (120). The invention also relates to component and a method for manufacturing such a structure (1).

Methods, systems, and apparatus that filters noise within a signal collected by a detector assembly. The detector assembly includes a first semiconductor layer of a first type configured to receive a photon. The detector assembly includes a second semiconductor layer of a second type. The second semiconductor layer is formed above the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are configured to collect a signal. The detector assembly includes an interface layer including an insulator portion for filtering noise. The interface layer is formed on the second semiconductor layer. The detector assembly includes a metal contact layer formed on the interface layer. The interface layer is configured to capacitively couple the first semiconductor layer and second semiconductor layer with the metal contact layer.

An electronic device includes a semiconductor nanoparticle, and a method of manufacturing the semiconductor nanoparticle is additionally provided. The semiconductor nanoparticle includes: a core including a first element; and a shell covering at least a portion of a surface of the core and including a second element and a third element, wherein the first element, the second element, and the third element are different from each other, and the first element and the second element are chemically bonded to each other on the at least a portion of the surface of the core.

Mercury cadmium telluride (MCT) dual band photodiode elements are described that include an n-type barrier region interposed between first and second p-type regions. The first p-type region is arranged to absorb different IR wavelengths to the second p-type region in order that the photodiode element can sense two IR bands. A portion of the second p-type region is type converted using ion-beam milling to produce a n-type region that interfaces with the second p-type region and the n-type barrier region.

A method for manufacturing a photodetection device, which includes the following steps: making a cadmium-rich structured coating, over a substrate of Cd.sub.xHg.sub.1-xTe, and using a first etching mask; etching to enlarge the through openings of the first etching mask or the through openings of an interlayer etched with the structured coating, so as to form a second etching mask; injecting acceptor doping elements into the substrate, throughout the second etching mask, and activating and diffusing the acceptor doping elements to form at least one P doped region in the semiconductor substrate; selective interdiffusion annealing of cadmium, so as to form in each P doped region a cadmium-rich concentrated well with a cadmium concentration lateral gradient; and making at least one electrical contact pad, at each through opening in the structured coating.

Systems and methods for thermal radiation detection utilizing a thermal radiation detection system are provided. The thermal radiation detection system includes one or more mercury-cadmium-telluride (HgCdTe)-based photodiode infrared detectors or Indium Arsenide (InAs)-based photodiode infrared detectors and a temperature sensing circuit. The temperature sensing circuit is configured to generate signals correlated to the temperatures of one or more of the plurality of infrared sensor elements. The thermal radiation detection system also includes a signal processing circuit.

Mercury cadmium telluride (MCT) dual band photodiode elements are described that include an n-type barrier region interposed between first and second p-type regions. The first p-type region is arranged to absorb different IR wavelengths to the second p-type region in order that the photodiode element can sense two IR bands. A portion of the second p-type region is type converted using ion-beam milling to produce a n-type region that interfaces with the second p-type region and the n-type barrier region.

In one aspect, a method includes forming an electrical path between p-type mercury cadmium telluride and a metal layer. The forming of the electrical path includes depositing a layer of polycrystalline p-type silicon directly on to the p-type mercury cadmium telluride and forming the metal layer on the layer of polycrystalline p-type silicon. In another aspect, an apparatus includes an electrical path. The electrical path includes a p-type mercury cadmium telluride layer, a polycrystalline p-type silicon layer in direct contact with the p-type mercury cadmium telluride layer, a metal silicide in direct contact with the polycrystalline p-type silicon layer, and an electrically conductive metal on the metal silicide. In operation, holes, indicative of electrical current on the electrical path, flow from the p-type mercury cadmium telluride layer to the electrically conductive metal.

A double photodiode electromagnetic radiation sensor device including a substrate, a first integrated photodiode (PD1), a second integrated photodiode (PD2), and more than one metal contact. The substrate may be within a first semiconductor material that defines a first face and a second face. The PD1 may include a first doped region extending to the second face and a “n-” type doping. The PD1 may further include a second doped region extending to the second face having a “p+” type doping. The PD2 may include the first doped region, and a layer in a second semiconductor material placed on the second face in contact with the first doped region defining a third face. The PD2 may yet further include a doped layer in the second semiconductor material having a “p+” type doping and overlapping the third face.

A photodetector for an optoelectronic system and an optoelectronic system including the photodetector. The photodetector includes a flexible substrate, a plurality of photodetector units attached to the flexible substrate, and a circuit attached to the flexible substrate. Each of the plurality of photodetector units are arranged to sense optical radiation and generate a photocurrent signal based on the sensed optical radiation. The circuit comprises a plurality of conductors electrically connected with the plurality of photodetector units. The circuit is arranged to be connected with a signal processor arranged to process the photocurrent signals to generate an image associated with the sensed optical radiation.