A photovoltaic photodetector includes a substrate, a graphene layer, and a dielectric layer positioned between the substrate and the graphene layer. One or more first antenna electrodes includes a first metal in direct contact with the graphene layer. One or more second antenna electrodes includes a second metal in direct contact with the graphene layer. The first and second metals have different work functions. A drain electrode is electrically coupled to the one or more first antenna electrodes, and a source electrode is electrically coupled to the one or more second antenna electrodes. The photovoltaic photodetector can be configured to be operable over a wavelength region of 2 μm to 24 μm and has a response time of 10 ns or less.

Various graphene-based photodetectors are disclosed. An example photodetector device may include: a substrate; a first antenna component fabricated on the substrate, the first antenna component comprising one or more antenna electrodes; a second antenna component fabricated on the substrate, the second antenna component comprising one or more antenna electrodes; a source region coupled to the first antenna component and the substrate; and a drain region coupled to the second antenna component and the substrate; wherein the one or more antenna electrodes in the first antenna component and the second antenna component are made of graphene.

A compact collision detector can be configured for low power operation to facilitate collision avoidance. In one embodiment, a nanoscale collision detector can be based on a photodetector, stacked on top of a non-volatile and programmable memory architecture that imitates the escape response of LGMD neuron at a frugal energy expenditure of few nanojoules (nJ) and at the same time can offer orders of magnitude benefit in device footprint (e.g. by having a relatively small size). Embodiments of the collision detector can be utilized in smart, low-cost, task-specific, energy efficient and miniaturized collision detection systems configured for collision avoidance.

The present invention relates to a photodetector (3) comprising: a longitudinal portion (12) of a waveguide (11) which comprises or is formed by two waveguide segments (12a, 12b), which extend at least substantially parallel to one another in the longitudinal direction and are preferably distanced from one another in the transverse direction, forming a gap (14) between them; and an active element (13), which overlies the longitudinal portion (12) of the waveguide and comprises at least one material or consists of at least one material that absorbs electromagnetic radiation of at least one wavelength and generates an electric photosignal as a result of the absorption, the two waveguide segments (12a, 12b) each being in contact, at least in some portions, on at least one side, in particular on the side facing the active element (14), with a gate electrode (15a, 15b) which preferably comprises silicon or consists of silicon.

Various graphene-based photodetectors are disclosed. An example photodetector device may include: a substrate; a first antenna component fabricated on the substrate, the first antenna component comprising one or more antenna electrodes; a second antenna component fabricated on the substrate, the second antenna component comprising one or more antenna electrodes; a source region coupled to the first antenna component and the substrate; and a drain region coupled to the second antenna component and the substrate; wherein the one or more antenna electrodes in the first antenna component and the second antenna component are made of graphene.

An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.

Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.

Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.

Photovoltaic devices such as solar cells having one or more field-effect hole or electron inversion/accumulation layers as contact regions are configured such that the electric field required for charge inversion and/or accumulation is provided by the output voltage of the photovoltaic device or that of an integrated solar cell unit. In some embodiments, a power source may be connected between a gate electrode and a contact region on the opposite side of photovoltaic device. In other embodiments, the photovoltaic device or integrated unit is self-powering.

In various embodiments, a simple, robust molybdenum disulfide (MoS.sub.2) based photosensor is provided that is able to detect both light intensity and wavelength. The MoS.sub.2 based photosensor may be structured as a field effect transistor (FET) with a back-gate configuration, including MoS.sub.2 nanoflake layers, an insulating layer coated, doped substrate, and source, drain and backgate electrodes. The photoresponse of the MoS.sub.2 based photosensor exhibits a fast response component that is only weakly dependent on the wavelength of light incident on the sensor and a slow response component that is strongly dependent on the wavelength of light incident on the sensor. The fast response component alone may be analyzed to determine intensity of the light, while the slow response component may be analyzed to determine the wavelength of the light.