Disclosed is a photosensitive component, including: an intrinsic layer; a first doped layer provided on a light incident side of the intrinsic layer; and a second doped layer provided on a light exit side of the intrinsic layer; the intrinsic layer, the first doped layer and the second doped layer are all doped with a dopant, and silicon ions are injected into the intrinsic layer, the first doped layer and the second doped layer. An X-ray detector and a display device are further disclosed.

Disclosed is a photosensitive component, including: an intrinsic layer; a first doped layer provided on a light incident side of the intrinsic layer; and a second doped layer provided on a light exit side of the intrinsic layer; the intrinsic layer, the first doped layer and the second doped layer are all doped with a dopant, and silicon ions are injected into the intrinsic layer, the first doped layer and the second doped layer. An X-ray detector and a display device are further disclosed.

A neutron beam detecting device according to the invention includes: a first solar cell-type detector that is provided with, on a surface thereof, a conversion film for converting neutrons into photons or any charged particle beam among alpha particles, protons, lithium nuclei, gamma rays or beta rays, and generates a current in response to incident radiation; a radiation detector that generates a current insensitive to neutrons as an output signal in response to the radiation incident; a current measuring device that detects, as signals, the current generated by the first solar cell-type detector and the current generated by the radiation detector in response to the incident radiation; and a flux calculating unit that compares the current signals from the detectors which are detected by the current measuring device. The flux calculating unit associates the detected current signals from the solar cell-type detector and the radiation detector with a relation between a flux of incident radiation of a predetermined type obtained in advance and the detected currents from the solar cell-type detector and the radiation detector, and calculates a flux of a neutron beam.

A neutron beam detecting device according to the invention includes: a first solar cell-type detector that is provided with, on a surface thereof, a conversion film for converting neutrons into photons or any charged particle beam among alpha particles, protons, lithium nuclei, gamma rays or beta rays, and generates a current in response to incident radiation; a radiation detector that generates a current insensitive to neutrons as an output signal in response to the radiation incident; a current measuring device that detects, as signals, the current generated by the first solar cell-type detector and the current generated by the radiation detector in response to the incident radiation; and a flux calculating unit that compares the current signals from the detectors which are detected by the current measuring device. The flux calculating unit associates the detected current signals from the solar cell-type detector and the radiation detector with a relation between a flux of incident radiation of a predetermined type obtained in advance and the detected currents from the solar cell-type detector and the radiation detector, and calculates a flux of a neutron beam.

A semiconductor photodiode (600) comprises a top side (602) with an active surface area (604) for light entry, a bottom side (606), a bulk structure (610) made of a single semiconductor material, the bulk structure comprising a p-type layer (612a) and an n-type layer (612b), which together form the p-n junction (612) of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer (612a) and the other one is a lower p-n junction layer (612b), wherein the upper p-n junction layer (612a) is located proximate to the active surface area (604), and a semiconductor light absorption layer (614), wherein the light absorption layer (614) defines the active surface area (604) and is arranged on top of the bulk structure (610), above the upper p-n junction layer (612a), and the semiconductor material of the light absorption layer (614) is different from the semiconductor material of the bulk structure (610), the light absorption layer (614) and the upper p-n junction layer (612a) thus forming a heterojunction, and the photodiode (600) further comprises a precursor layer (620) arranged between the bulk structure (610) and the light absorption layer (614), the light absorption layer (614) being grown on the precursor layer.

An object to provide a radiation detector and method for manufacturing a radiation detector. According to an embodiment, a radiation detector includes: a photodiode layer having at least one pixel; and a scintillator layer including at least one geometrical shape including a scintillating material and a polymer, wherein the scintillating material is configured to convert incident ionising radiation into nonionising electromagnetic radiation, and wherein the at least one geometrical shape is configured to guide at least part of the converted electromagnetic radiation into the at least one pixel. A radiation detector and a method for manufacturing a radiation detector are also disclosed.

An object to provide a radiation detector and method for manufacturing a radiation detector. According to an embodiment, a radiation detector includes: a photodiode layer having at least one pixel; and a scintillator layer including at least one geometrical shape including a scintillating material and a polymer, wherein the scintillating material is configured to convert incident ionising radiation into nonionising electromagnetic radiation, and wherein the at least one geometrical shape is configured to guide at least part of the converted electromagnetic radiation into the at least one pixel. A radiation detector and a method for manufacturing a radiation detector are also disclosed.

Thermal neutron detectors and methods of fabricating the same are provided. A thermal neutron detector can use boron in both the neutron conversion layer and as a source for conformal doping in a semiconductor substrate. The neutron detector can be a micro-structured diode with cavities having a depth of 60 microns or less. The boron can be filled in the cavities and diffused into the semiconductor substrate via a diffusion annealing process.

Thermal neutron detectors and methods of fabricating the same are provided. A thermal neutron detector can use boron in both the neutron conversion layer and as a source for conformal doping in a semiconductor substrate. The neutron detector can be a micro-structured diode with cavities having a depth of 60 microns or less. The boron can be filled in the cavities and diffused into the semiconductor substrate via a diffusion annealing process.

A stacked III-V semiconductor photonic device having a second metallic terminal contact layer at least formed in regions, a highly doped first semiconductor contact region of a first conductivity type, a very low doped absorption region of the first or second conductivity type having a layer thickness of 20 μm-2000 μm, a first metallic terminal contact layer, wherein the first semiconductor contact region extends into the absorption region in a trough shape, the second metallic terminal contact layer is integrally bonded to the first semiconductor contact region and the first metallic terminal contact layer is arranged below the absorption region. In addition, the stacked III-V semiconductor photonic device has a doped III-V semiconductor passivation layer of the first or second conductivity type, wherein the III-V semiconductor passivation layer is arranged at a first distance of at least 10 μm to the first semiconductor contact region.