Patent classifications
H01L31/1888
Perovskite silicon tandem solar cell and method for manufacturing the same
Disclosed is a tandem solar cell according to an aspect including: a silicon lower cell; a perovskite upper cell disposed on the silicon lower cell; and a bonding layer for bonding the silicon lower cell and the perovskite upper cell between the silicon lower cell and the perovskite upper cell, wherein the front surface portion of the silicon lower cell being in contact with the bonding layer includes a texture structure, the bonding layer includes a first transparent electrode layer formed on the sidewall of the texture structure, a buried layer filling concave portions of the texture structure on the first transparent electrode layer, and a second transparent electrode layer on top surfaces of the buried layer, the first transparent electrode layer and the texture structure.
METHOD OF MANUFACTURING A THIN FILM PHOTOVOLTAIC PRODUCT
A method of forming a photovoltaic product with a plurality of photovoltaic cells is disclosed. The method comprises depositing a stack with first and second electrode layers (12, 16) and a photovoltaic layer (14) arranged in between. The method comprises partitioning the stack. The partitioning includes forming a trench (20) extending through the second electrode layer and the photovoltaic layer to expose the first electrode layer. The stack is first irradiated with a laser beam with a first spotsize and with a first wavelength for which the photovoltaic layer has a relatively high absorption coefficient as compared to that of the second electrode layer. The stack is then irradiated with a second laser beam with a second spotsize, greater than the first spotsize, and with a second wavelength for which the photovoltaic layer has a relatively low absorption coefficient as compared to that of the second electrode layer.
Thin-film photovoltaic cell with high photoelectric conversion rate and preparation process thereof
The present disclosure provides a thin-film photovoltaic cell with a high photoelectric conversion rate and a preparation process thereof. The thin-film photovoltaic cell comprises a transparent substrate and photovoltaic units which are disposed on the transparent substrate and arranged toward the display module, and the photovoltaic unit disposed in the display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a transparent back electrode disposed on the light absorption layer; and the photovoltaic unit disposed in the non-display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a metal back electrode disposed on the light absorption layer.
Method of fabricating see-through thin film solar cell
Provided is a method of fabricating a see-through thin film solar cell, the method including preparing a substrate including a molybdenum (Mo) layer on one surface, forming see-through patterns by selectively removing at least parts of the Mo layer, sequentially depositing a chalcogenide absorber layer, a buffer layer, and a transparent electrode layer on the substrate and the Mo layer including the see-through patterns, and forming a see-through array according to a shape of the see-through patterns by removing the chalcogenide absorber layer, the buffer layer, and the transparent electrode layer deposited on the see-through patterns, by irradiating a laser beam from under the substrate toward the transparent electrode layer.
PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME
A photovoltaic device (1) with a plurality of photovoltaic modules (1A, IB, . . . , IF), is disclosed herein comprising a stack with a primary electrode layer (12), a secondary electrode layer (16) and a photovoltaic layer (14) arranged between said primary and said secondary electrode layer, at least one of the electrode layers being translucent, the photovoltaic layer (14) at least comprising a first sublayer of a photovoltaic material and a second, charge carrier transport sublayer between said first sublayer and said secondary electrode layer. An serial electrical interconnection between mutually subsequent photovoltaic modules (IB, 1C) is provided by a coupling element of insulating material laterally enclosing an electrically conducting core (17BC) provided in the interface section between the mutually subsequent photovoltaic modules. Therewith a lifetime of the photovoltaic material is improved.
SOLAR CELL AND METHOD FOR MANUFACTURING SOLAR CELL
A solar cell includes a semiconductor substrate; a plurality of band-like first semiconductor layers and a plurality of second semiconductor layers provided alternatively on a back surface side of the semiconductor substrate; a band-like first electrode stacked on the first semiconductor layer and a band-like second electrode stacked on the second semiconductor layer; and a band-shaped or linear insulating body stacked on a back surface of the first semiconductor layer in a region distanced from the first electrode and an edge on a side of the second semiconductor layer.
Photodetector based on PtSe2 and silicon nanopillar array and preparation method thereof
A photodetector based on PtSe.sub.2 and a silicon nanopillar array includes a PMMA light-transmitting protective layer, a graphene transparent top electrode, a silicon nanopillar array structure coated with few-layer PtSe.sub.2, and metal electrodes of the graphene transparent top electrode and the silicon nanopillar array structure. A method for preparing the photodetector includes steps of: preparing graphene with a CVD method; preparing a silicon nanopillar array structure through dry etching; coating few-layer PtSe.sub.2 on surfaces of the silicon nano-pillar array structure through laser interference enhanced induction CVD; preparing graphene transparent top electrode; and magnetron-sputtering metal electrodes. The photodetector prepared by the present invention has a detection range from visible light to near-infrared wavebands. The silicon nanopillar array structure enhances light absorption of the detector, so that the detector has high sensitivity, simple structure and strong practicability.
Contact structure and electronic device having the same
The present disclosure provides a contact structure and an electronic device having the same. The contact structure includes: a substrate; a copper layer disposed on the substrate; an adhesion promotion layer disposed on the copper layer, wherein the adhesion promotion layer forms a monomolecular adsorption layer on the surface of the copper layer; and a silver nanowire layer disposed on the adhesion promotion layer, and the adhesive force between the copper layer and the silver nanowire layer is 3B or more. In the present disclosure, by disposing the adhesion promotion layer on the copper layer, in the stacked structure of the copper layer and the silver nanowire layer, the adhesive force between the copper layer and the silver nanowire layer is increased, so as to prevent a peeling phenomenon of the copper layer occurring in the subsequent yellow-light process.
BSI Chip with Backside Alignment Mark
A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.
Array substrate, preparation method thereof, display panel and display device
Disclosed are an array substrate, a preparation method thereof, a display panel and a display device. The array substrate includes a base substrate, a first thin film transistor, a photosensitive sensor, and a dielectric layer. The first thin film is on the base substrate and includes a gate, a drain, a source and a conductive channel between the drain and the source. The photosensitive sensor has the drain of the first thin film transistor as an electrode of the photosensitive sensor. The dielectric layer covers the conductive channel of the first thin film transistor, where the dielectric layer is a metal oxide film.