A display device includes LEDs, a circuit board, an insulating layer, conductive posts, a control conductive plate, and a common conductive strip. The circuit board includes first pads and a second pad surrounding the first pads. The LEDs are on an insulating layer covering the first pads, each including a first and second electrode pad. The conductive posts are on and connected to a first portion of the first pads, and penetrate the insulation layer. The control conductive plate is electrically connected to one of the first electrode pads and the conductive posts. The common conductive strip is on the insulation layer and electrically connected to the second pad and a second electrode pad. Each first electrode pad is electrically connected to the first pads. A second portion of the first pads is completely covered by the insulation layer and overlapped with the common conductive strip and the insulation layer.

A radiation-emitting semiconductor chip may include a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, a first metallic mirror with which charge carriers can be embedded into the first semiconductor layer, a first metallic contact layer disposed atop the first metallic mirror, and a second metallic contact layer disposed atop the first metallic contact layer. A first seed layer may be disposed between the first metallic contact layer and the first metallic mirror. A second seed layer may be disposed between the first metallic contact layer and the second metallic contact layer. The radiation-emitting semiconductor chip may include a radiation exit face having a multitude of emission regions. The first metallic mirror may have a multitude of cutouts that each define a lateral extent of one of the emission regions.

A light emitting diode package includes: a housing including a cavity region therein; a light emitting diode chip mounted in the cavity region of the housing; and a resin part formed in the cavity region to cover a light emitting surface of the light emitting diode chip. The housing includes a first surface and a second surface perpendicular to a width direction of the housing and spaced apart from each other, and a third surface and a fourth surface perpendicular a longitudinal direction of the housing and spaced apart from each other, in which the first surface and the second surface surround the resin part while the third surface and the fourth surface expose side surfaces of the resin part.

A base member for a light emitting device includes a bottom part and a frame part. The frame part has an upper surface, a lower surface, and a step portion. The frame part has a bonding surface bonded to the bottom part, and defining a planar surface of the step portion at a lower surface side, first and second inner surfaces, a first planar surface defining a planar surface of the step portion at an upper surface side, and first and second electrode layers electrically connected to each other, the second electrode layer being disposed on the first planar surface while the first electrode layer being not disposed on the first planar surface. The step portion extends along an entire periphery of the frame part in a bottom view, and the step portion does not extend along the entire periphery of the frame part in a top view.

A light emitting device is provided. The light emitting device includes a light emitting assembly having a first light emitting diode package structure and a second light emitting diode package structure. The light emitting assembly can generate a mixed light source having a spectral deviation index. The first light emitting diode package structure can generate a first light source having a first spectral deviation index. The second light emitting diode package structure can generate a second light source having a second spectral deviation index. When the first light source and the second light source are within a range from 460 to 500 nm, a sum of the first spectral deviation index and the second spectral deviation index is within a range from −0.3 to 0.3, and a difference between the first spectral deviation index and the second spectral deviation index is at least greater than 0.2.

A manufacturing method of a light-emitting device, including the steps of: preparing a substrate including a base, a first wall formed on an upper surface of the base, and a recess defined by a lateral surface of the first wall as an inside lateral surface and the upper surface of the base as a bottom surface; mounting a light-emitting element on the bottom surface of the recess; disposing a sealing member which covers the light-emitting element and the first wall; forming a groove section extending from an upper surface of the sealing member to the first wall by removing the sealing member on the first wall; disposing a second wall inside the groove section; and cutting the second wall and the substrate at a position including the second wall.

A light emitting device includes a substrate including a base member including a front surface, a rear surface opposite to the front surface, a bottom surface perpendicular to the front surface, and a top surface opposite to the bottom surface, a first wiring portion located on the front surface, and a second wiring portion located on the rear surface; a light emitting element electrically connected with the first wiring portion; and a first reflective member covering a lateral surface of the light emitting element and the front surface of the base member. The base member has a recessed portion opened on the rear surface and the bottom surface. The substrate includes a third wiring portion covering an inner wall of the recessed portion and electrically connected with the second wiring portion, and a via in contact with the first wiring portion, the second wiring portion and the third wiring portion.

The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.

The present disclosure provides an electronic device including a substrate and at least one light emitting unit. The light emitting unit includes a light emitting diode, a protective layer, and a light conversion layer. The protective layer includes a portion having a ripped section and not overlapped with the light emitting diode in a top view direction of the electronic device. The electronic device of the present disclosure may provide an electronic device that may reduce the influence from the outside or a subsequent process on the light emitting diode and improve luminance performance and reliability.

A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.