Patent classifications
H01P1/20327
Composite electronic component
A composite electronic component includes a multilayered body in which a plurality of dielectric layers and a plurality of conductor layers are alternately stacked, a first resonant circuit including a first line and a first capacitor, the first line being formed of one or more first conductor layers of the conductor layers, the first capacitor including a first electrode formed of a plurality of second conductor layers of the conductor layers, and a second resonant circuit including a second line and a second capacitor, the second line being formed of one or more third conductor layers of the conductor layers, the second capacitor including a second electrode formed of the second conductor layers, the second conductor layers being located between the one or more first conductor layers and the one or more third conductor layers.
CHANNELIZED FILTER USING SEMICONDUCTOR FABRICATION
A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
Resonant Unit and Filter
A resonant unit and a filter, where the resonant unit includes a dielectric substrate, a metal microstrip disposed on a plane of the dielectric substrate, where the metal microstrip is used as a signal input/output port, and a defected ground structure disposed on another plane opposite to the plane of the dielectric substrate, where the defected ground structure includes a ground loop and an interdigital structure located inside the ground loop, the interdigital structure includes multiple fingers, and the ground loop or at least one finger in the interdigital structure includes at least one embedded interdigital structure. Harmonic suppression capabilities of the resonant unit and the filter can be improved, and an area can be reduced.
Filter circuits
A filter circuit includes an input node, an output node, a first filtering element and a second filtering element. The first filtering element has a first terminal coupled to the input node and a second terminal, and is configured to provide a first signal conducting path toward the second terminal for conducting a first signal received at the input node to the second terminal. The second filtering element has a first terminal coupled to the input node and a second terminal, and is configured to provide a second signal conducting path toward the output node for conducting a second signal received at the input node to the output node. The second terminal of the first filtering element and the second terminal of the second filtering element are open-circuit terminals.
HIGH-FREQUENCY CIRCUIT AND RADIO DEVICE
A high-frequency circuit includes: a first ground layer having an electric conductor formed therein; a second ground layer having an electric conductor formed therein; and a conductive pattern layer having a first conductive pattern formed thereon. The first ground layer, the second ground layer, and the conductive pattern layer are laminated one on another. The conductive pattern layer includes a first area in which a distance to the electric conductor formed in the second ground layer is longer than a distance to the electric conductor formed in the first ground layer, in a lamination direction in which the first ground layer, the second ground layer, and the conductive pattern layer are laminated. At least a part of the first conductive pattern is disposed in the first area.
COMPOSITE ELECTRONIC COMPONENT
A composite electronic component includes a multilayered body in which a plurality of dielectric layers and a plurality of conductor layers are alternately stacked, a first resonant circuit including a first line and a first capacitor, the first line being formed of one or more first conductor layers of the conductor layers, the first capacitor including a first electrode formed of a plurality of second conductor layers of the conductor layers, and a second resonant circuit including a second line and a second capacitor, the second line being formed of one or more third conductor layers of the conductor layers, the second capacitor including a second electrode formed of the second conductor layers, the second conductor layers being located between the one or more first conductor layers and the one or more third conductor layers.
Package for a Tunable Filter
A package for a tunable filter is disclosed. In an embodiment, the tunable filter includes a substrate having a first interconnection plane and a semiconductor device assembled on the substrate in a first component plane, the semiconductor device electrically connected to the first interconnection plane and containing tunable passive components. The filter further includes a control unit arranged in the first component plane, a dielectric layer arranged above the first component plane, a second component plane arranged on the dielectric layer and discrete passive devices arranged in the second component plane and interconnected with the semiconductor device, wherein the tunable passive components are tunable by the control unit.
ELECTRONIC COMPONENT
An electronic component includes two or more first parallel resonators arranged in an orthogonal direction orthogonal or substantially orthogonal to a lamination direction, each first LC parallel resonator including a first inductor and a first capacitor, two second LC parallel resonators surrounding the two or more first LC parallel resonators from both sides in the orthogonal direction, each second LC parallel resonator including a second inductor and a second capacitor, a second capacitor connected to one end of the two second LC parallel resonators, and a first connecting conductor that connects two of the first LC parallel resonators that are not adjacent in the orthogonal direction, or connects one of the first LC parallel resonators and one of the second LC parallel resonators that are not adjacent in the orthogonal direction.
TUNABLE BAND-STOP FILTER, METHOD OF DRIVING THE SAME AND ELECTRONIC DEVICE
A tunable band-stop filter, a method of driving a tunable band-stop filter and an electronic device are provided. The tunable band-stop filter includes a first substrate, a second substrate, and a liquid crystal layer sandwiched between the first substrate and the second substrate. The first substrate includes a wire structure on a first base substrate, the second substrate includes a common electrode on a second base substrate. The wire structure includes a first wire structure and a second wire structure. The first wire structure, the common electrode, and the liquid crystal layer between the first wire structure and the common electrode constitute a first phase modulation structure, and the second wire structure, the common electrode, and the liquid crystal layer between the second wire structure and the common electrode constitute a second phase modulation structure.
Channelized filter using semiconductor fabrication
An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.