The present invention relates to a laminated body with electric conductor including a substrate; a functional layer having at least an adhesive layer; an electric conductor; and a protective material, wherein the substrate, the functional layer having at least the adhesive layer, the electric conductor, and the protective material are sequentially laminated in a thickness direction, and wherein a thickness of the functional layer is less than or equal to 0.300 mm.

A semiconductor package is provided. The semiconductor package includes a semiconductor die, a stack of polymer layers, redistribution elements and a passive filter. The polymer layers cover a front surface of the semiconductor die. The redistribution elements and the passive filter are disposed in the stack of polymer layers. The passive filter includes a ground plane and conductive patches. The ground plane is overlapped with the conductive patches, and the conductive patches are laterally separated from one another. The ground plane is electrically coupled to a reference voltage. The conductive patches are electrically connected to the ground plane, electrically floated, or electrically coupled to a direct current (DC) voltage.

A waveguide structure includes at least one transmission line and at least one conductive pattern layer. At least a portion of the transmission line and at least a portion of the conductive pattern layer overlap each other as observed from a surface side of the conductive pattern layer. A surface electrical resistance value of the conductive pattern layer is in a range of 0.005 Ω/□ to 30 Ω/□.

The present invention relates to a transmission line having improved bending durability, which includes a strip structure or a micro-strip structure that is divided into a base part and a bending part that is bent and unfolded based on the base part, wherein the base part and the bending part include a signal line configured to extend in a length direction so as to transmit a high frequency signal, a first dielectric of which an upper surface or a lower surface is provided with the signal line formed thereon, and a second dielectric formed above the first dielectric; and the second dielectric is coupled to the first dielectric in the base part and separated from the first dielectric in the bending part.

A transmission line device includes first and second transmission lines. The first transmission line includes a first electrode pad that is electrically connected to a first signal conductor pattern, and a second electrode pad and a third electrode pad that are portions of a first ground conductor pattern. The second transmission line includes a fourth electrode pad that is electrically connected to a second signal conductor pattern, and a fifth electrode pad and a sixth electrode pad that are portions of a second ground conductor pattern. The first electrode pad is between the second electrode pad and the third electrode pad, and the fourth electrode pad is between the fifth electrode pad and the sixth electrode pad. The second electrode pad and the third electrode pad are larger than the first electrode pad, and the fifth electrode pad and the sixth electrode pad are larger than the fourth electrode pad.

Provided is a carrier-attached metal foil which has excellent carrier-releasability and excellent selective metal layer-etchability, and can achieve a reduction in transmission loss and resistance in a semiconductor package (for example, a millimeter-wave antenna substrate) manufactured using the same. The carrier-attached metal foil includes: (a) a carrier; (b) a release functional layer on the carrier and including (b1) an adhesion layer disposed closer to the carrier and having a thickness of more than 10 nm and less than 200 nm and (b2) a release assistance layer disposed farther from the carrier and having a thickness of 50 nm or more and 500 nm or less; and (c) a composite metal layer on the release functional layer and including (c1) a carbon layer disposed closer to the release assistance layer, and (c2) a first metal layer disposed farther from the release assistance layer and mainly composed of Au or Pt.

Provided is a rapid over-the-air (OTA) production line test platform, including a device under test (DUT), an antenna array and two reflecting plates. The DUT has a beamforming function. The antenna array is arranged opposite to the DUT, and emits beams with beamforming. Two reflecting plates are disposed opposite to each other, and are arranged between the DUT and the antenna array. The beam OTA test of the DUT is carried out by propagation of the beams between the antenna array, the DUT and the two reflecting plates. Accordingly, the test time can be greatly shortened and the cost of test can be effectively reduced. In addition to the above-mentioned rapid OTA production line test platform, platforms for performing the OTA production line test by using horn antenna arrays together with bending waveguides and using a 3D elliptic curve are also provided.

A semiconductor package is provided. The semiconductor package includes a semiconductor die, a stack of polymer layers, redistribution elements and a passive filter. The polymer layers cover a front surface of the semiconductor die. The redistribution elements and the passive filter are disposed in the stack of polymer layers. The passive filter includes a ground plane and conductive patches. The ground plane is overlapped with the conductive patches, and the conductive patches are laterally separated from one another. The ground plane is electrically coupled to a reference voltage. The conductive patches are electrically connected to the ground plane, electrically floated, or electrically coupled to a direct current (DC) voltage.

A semiconductor device includes a first transmission line. The semiconductor device includes a second transmission line. The semiconductor device includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts each of the first transmission line and the second transmission line.

A signal transmission line includes a laminate, a signal conductor, a hollow portion, and a reinforcing conductor. The laminate includes a flexible laminate including resin layers each of which has flexibility. The signal conductor extends in a signal transmission direction of the laminate and is disposed in an intermediate position in a laminating direction of the resin layers. The hollow portion is in the laminate and defined by an opening provided at a portion of the plurality of resin layers. The reinforcing conductor is in the laminate. The hollow portion is disposed at a position overlapping with the signal conductor, in a plan view of the laminate from a surface perpendicular or substantially perpendicular to the laminating direction. The reinforcing conductor is disposed at a position different from the position of the hollow portion in a plan view.