H
ELECTRICITY
H
ELECTRICITY
H01
ELECTRIC ELEMENTS
H01
ELECTRIC ELEMENTS
H01S
DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
H01S
DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5/00
Semiconductor lasers
5/00
Semiconductor lasers
H01S5/30
Structure or shape of the active region; Materials used for the active region
H01S5/30
Structure or shape of the active region; Materials used for the active region
H01S5/34
comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
H01S5/34
comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
H01S5/3401
having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
H01S5/3401
having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
H01S5/3402
intersubband lasers, e.g. transitions within the conduction or valence bands
H01S5/3402
intersubband lasers, e.g. transitions within the conduction or valence bands