Patent classifications
H03F2200/135
Compact architecture for multipath low noise amplifier
Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.
RF AMPLIFIER WITH A CASCODE DEVICE
An RF amplifier comprises a first ‘transconductance’ transistor (N.sub.CS) arranged to receive an RF input voltage (RFIN) at its gate terminal. A second ‘cascode’ transistor (N.sub.CG) has its source terminal connected to the drain terminal of the first transistor (N.sub.CS) at a node (MID). A feedback circuit portion is configured to measure a node voltage at the node (MID), to determine an average of the node voltage, to compare said average node voltage to a predetermined reference voltage (V.sub.BCG), and to generate a control voltage (CGGATE) dependent on the difference between the average node voltage and the predetermined reference voltage (V.sub.BCG). The feedback circuit portion applies the control voltage (CGGATE) to the gate terminal of the second transistor (N.sub.CG).
RADIO FREQUENCY POWER AMPLIFIER
According to one aspect, an integrated circuit includes a power amplifier having a succession of at least two amplifier stages. The two amplifier stages include a first amplifier stage configured to receive a radio frequency signal as input and a last amplifier stage configured to deliver as an output of an amplified radio frequency signal. The power amplifier further includes a safety circuit with a control circuit configured to compare the amplified radio frequency signal voltage with a threshold voltage. The safety circuit further comprises a gain reduction circuit configured to reduce a bias voltage of an upstream amplifier stage of the last amplifier stage when the amplified radio frequency signal voltage is greater than the threshold voltage.
SEMICONDUCTOR DEVICE
A semiconductor device includes input and output terminals, first and second power supply terminals, first and second transistors, and a first resistance element. In the first transistor, gate and source terminals are respectively connected to the input terminal and the first power supply terminal, a drain terminal is connected to the second power supply terminal in direct current and to the output terminal, and the gate and drain terminals are connected via the first resistance element. In the second transistor, a source terminal is connected to the first power supply terminal, and gate and drain terminals are short-circuited at a node connected to the gate terminal of the first transistor in direct current. In a lower frequency region, an impedance of the first resistance element is lower than impedances of parasitic capacitances in the first transistor between the gate and drain terminals and between the gate and source terminals.
IMAGING DEVICE
An imaging device of the present disclosure includes: a plurality of pixel circuits that each generates a pixel signal including a pixel voltage corresponding to an amount of received light, and performs AD conversion by comparing the pixel signal with a reference signal; and a reference signal generator including a signal generation circuit and a voltage follower circuit, the signal generation circuit that generates a voltage signal having a ramp waveform, and the voltage follower circuit that performs a voltage follower operation on the basis of the voltage signal to generate the reference signal, and supplies the reference signal to the plurality of pixel circuits.
Compact Architecture for Multipath Low Noise Amplifier
Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.
Peaking amplifier frequency tuning
A circuit including: input and output nodes and first and second feedback nodes; a first input amplifier having an input connected to the input node and an output connected to the first feedback node; a second input amplifier having an input connected to the input node and an output connected to the second feedback node; a capacitor connecting the first feedback node and the second feedback node; an amplifier having an input connected to the first feedback node and an output connected to the output node; a base feedback amplifier with an input connected to the output node and an output connected to the first feedback node; a tunable feedback amplifier with an input connected to the output node and an output connected to the second feedback node; and a tuning circuit for varying a transconductance of the tunable feedback circuit and operational frequency of the peaking amplifier circuit.
Balanced differential transimpedance amplifier with single ended input and balancing method
A balanced differential transimpedance amplifier with a single-ended input operational over a wide variation in the dynamic range of input signals. A threshold circuit is employed to either or a combination of (1) generate a varying decision threshold to ensure a proper slicing over a wide range of input current signal levels; and (2) generate a bias current and voltage applied to an input of a transimpedance stage to cancel out a dependence of the transimpedance stage voltage input on input current signal levels.
Switchable base feed circuit for radio-frequency power amplifiers
Switchable base feed circuit for radio-frequency (RF) power amplifiers. In some embodiments, an RF power amplifier (PA) circuit can include a transistor having a base, a collector, and an emitter, with the transistor being configured to amplify an RF signal. The PA circuit can further include a bias circuit configured to provide a base bias signal to the base of the transistor. The PA circuit can further include a switchable base feed circuit implemented between the bias circuit and the base of the transistor. The switchable base feed circuit can be configured to provide a plurality of different resistance values for the base bias signal between the bias circuit and the base of the transistor. Such a PA circuit can be implemented in products such as a die, a module, and a wireless device.
A SYSTEM AND METHOD FOR CLOSE-DOWN POP REDUCTION
A close-down pop reduction system and a method for close-down pop reduction in an audio amplifier assembly are disclosed. The switching power conversion system comprises a forward path having a compensator and a switching power stage and a signal path from an output of a comparator in the switching power stage to a sequence control unit. The signal path includes a close-down timing circuit configured to provide a timing signal. The sequence control unit is configured to eliminate the input signal, increase the switch frequency of the close-down pop reduction system and disable the switching power stage at a moment in time within a PWM pulse of the switching power stage. Hereby, it is e.g. possible to minimize the audible pop during close-down of audio amplifier assemblies.