A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

A filter device includes a filter circuit including first and second terminals and series arm resonators along a series arm connecting the first terminal and the second terminal, and an additional circuit connected in parallel at least some of the series arm resonators. The additional circuit includes first, second, and third interdigital transducer electrodes. The first interdigital transducer electrode is connected to a first node at one end portion of a series arm resonator having a lowest anti-resonant frequency of the series arm resonators, the second interdigital transducer electrode is connected to a second node having a potential different from a potential of the first node, the third interdigital transducer electrode is connected to a third node having a potential different from the potentials of the first and second nodes, and the first and second nodes are closer to the first terminal than the third node.

A surface acoustic wave filter includes series and parallel arm resonance sections. The series arm resonance section is in a series arm. The parallel arm resonance section is in a parallel arm. The series arm resonance section includes one or more surface acoustic wave devices. Each surface acoustic wave device includes a first resonator group and a second resonator group. The first and second resonator groups are connected in parallel and include surface acoustic wave resonators. The first resonator group includes at least one surface acoustic wave resonator. The second resonator group includes a greater number of surface acoustic wave resonators than the at least one surface acoustic wave resonator in the first resonator group. The resonant frequency of the surface acoustic wave resonator in the first resonator group is higher than the resonant frequency of the surface acoustic wave resonators in the second resonator group.

A combined acoustic wave device package is provided comprising: a first substrate having a bulk acoustic wave (BAW) resonator formed thereon; a second substrate having a surface acoustic wave (SAW) resonator formed thereon; and at least one bonding element connecting the first substrate and second substrate. A method for forming such a combined acoustic wave device package is also provided. A radio frequency (RF) device comprising such a combined acoustic wave device package, and a wireless device comprising an antenna and a such a combined acoustic wave device package are also provided.

In order to pass a signal having a wide pass bandwidth with respect to a center frequency of a pass band, a surface acoustic wave device includes a first surface acoustic wave element provided with a first pass band; and a second surface acoustic wave element having a second pass band in a high frequency band compared with the first pass band of the first surface acoustic wave element, in which the first surface acoustic wave element and the second surface acoustic wave element have a common input terminal and a common output terminal, and a frequency of a high frequency side of the first pass band of the first surface acoustic wave element is partially overlapped with a frequency of a low frequency side of the second pass band of the second surface acoustic wave element.

Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators. One example is a frequency band filter circuit having a split resonator. The split resonator comprises a resonator including a first section of a shared input busbar, a first section of a shared output busbar, and an electrode structure between the first section of the shared input busbar and the first section of the shared output busbar, the electrode structure configured for a resonance. The split resonator also comprises a detuned resonator. The detuned resonator includes a second section of the shared input busbar, a second section of the shared output busbar, and a detuned electrode structure between the second section of the shared input busbar and the second section of the shared output busbar, the detuned electrode structure configured for a detuned resonance different from the resonance.

A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO.sub.2/ZnO islands, each including a SiO.sub.2 buffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiO.sub.2 buffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO.sub.2/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaic properties of the device. The device is manufactured using a disclosed technique for propagating strong surface acoustic waves on weak piezoelectric materials. Also disclosed is a photodetector developed using that technique.

A micro-acoustic RF filter comprises first and second ports (101, 102). First and a second signal paths (120, 110) are coupled between the first and second ports and include a corresponding resonator (111, 121). The resonator of at least one of the signal paths is a micro-acoustic resonator. One of the signal paths includes also a phase shifter (232) serially connected with the resonator (111). The micro-acoustic RF filter achieves a broad passband determined by the resonance frequencies of the micro-acoustic resonators. The filter allows flexible adaption of the passband and stopband performance.

A filter is provided that includes a set of cascaded resonator stages coupled between a filter input and a first filter output, wherein the filter includes a second filter output coupled to an output of a first or an intermediate one of the set of cascaded resonator stages. Another filter includes a set of cascaded resonator stages coupled between a first filter input and a filter output, wherein the filter includes a second filter input coupled to an input of an intermediate or a last one of the set of cascaded resonator stages. Both filters are configured to apply a first filter frequency response to a first signal propagating via the set of cascaded resonator stages, and apply a second filter frequency response to a second signal propagating via a subset of one or more of the set of cascaded resonator stages.

An electromechanical device includes a piezoelectric support delimited by a surface, or by two surfaces parallel to each other, and, on this support, a resonator for elastic waves propagating parallel to the surface or surfaces, the resonator including two reflectors that delimit the resonator and which are reflective for the waves, several interfacing transducers, to generate the waves from an electrical signal, and several transducers for controlling the resonance frequency, each transducer including a first electrode and a second electrode that are interdigitated, the transducers being arranged along the propagation path followed by the waves in the resonator, with, along the path, an alternation between interfacing transducer and tuning transducer.