A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on a front side of the carrier substrate, and a layer of piezoelectric material disposed on a front side of the layer of the first dielectric material, the piezoelectric material having a cut angle θ of from about 12 degrees to about 25 degrees to suppress bulk leakage and improve gamma, and interdigital transducer electrodes disposed on a front side of the layer of piezoelectric material.

An acoustic wave device includes a piezoelectric layer and an interdigital transducer disposed on the piezoelectric layer. The interdigital transducer primarily includes Al and includes an additive selected from a group consisting of Nd, Sc, and Ta, and a concentration of the additive in a region opposite to a piezoelectric-layer-side region of the interdigital transducer is higher than a concentration of the additive in the piezoelectric-layer-side region of the interdigital transducer.

An elastic wave device includes a supporting substrate, an acoustic reflection layer on the supporting substrate, a piezoelectric layer on the acoustic reflection layer, and an IDT electrode on the piezoelectric layer. The acoustic reflection layer includes three or more low-acoustic impedance layers and two or more high-acoustic impedance layers. At least one of a first relationship in which in which, a film thickness of a first low-acoustic impedance layer closest to the piezoelectric layer is thinner than a film thickness of a low-acoustic impedance layer closest to the first low-acoustic impedance layer, and a second relationship in which a film thickness of a first high-acoustic impedance layer closest to the piezoelectric layer is thinner than a film thickness of a high-acoustic impedance layer closest to the first high-acoustic impedance layer, is satisfied.

A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate and having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a cavity disposed below the piezoelectric layer, a first interdigital transducer (IDT) disposed on the bottom surface of the piezoelectric layer, and a second IDT disposed on the top surface of the piezoelectric layer. An interdigital portion of the first IDT is exposed in the cavity. An interdigital portion of the second IDT is vertically aligned with the interdigital portion of the first IDT.

A surface acoustic wave resonator, a filter and a communication device are provided. The surface acoustic wave resonator includes a piezoelectric material layer, an interdigital transducer and a reflective electrode structure; the piezoelectric material layer includes a first region and two second regions arranged in a first direction; the interdigital transducer is located at a side of the piezoelectric material layer; the reflective electrode structure is arranged in the same layer as the interdigital transducer; the first region is located between two second regions, the interdigital transducer is located in the first region, the reflective electrode structure is located in the second region, and the surface acoustic wave resonator further includes a groove located in the piezoelectric material layer, the groove is located in the second region, and is located at a side of the reflective electrode structure away from the interdigital transducer in the first direction.

The present disclosure relates to a ladder-type surface acoustic wave (SAW) device, which includes a piezoelectric layer, two reflective structures, at least one series interdigital transducer (IDT) coupled between a first signal point and a second signal point, and at least one shunt IDT. The at least one shunt IDT is coupled at least between the first signal point and ground, or between the second signal point and ground. Herein, the two reflective structures, the at least one series IDT, and the at least one shunt IDT reside over the piezoelectric layer. The at least one series IDT and the at least one shunt IDT are arranged between the two reflective structures.

The present disclosure relates to a ladder-type surface acoustic wave (SAW) device, which includes a piezoelectric layer, two reflective structures, at least one series interdigital transducer (IDT) coupled between a first signal point and a second signal point, and at least one shunt IDT. The at least one shunt IDT is coupled at least between the first signal point and ground, or between the second signal point and ground. Herein, the two reflective structures, the at least one series IDT, and the at least one shunt IDT reside over the piezoelectric layer. The at least one series IDT and the at least one shunt IDT are arranged between the two reflective structures.

The present disclosure relates to a ladder-type surface acoustic wave (SAW) device, which includes a piezoelectric layer, two reflective structures, at least one series interdigital transducer (IDT) coupled between a first signal point and a second signal point, and at least one shunt IDT. The at least one shunt IDT is coupled at least between the first signal point and ground, or between the second signal point and ground. Herein, the two reflective structures, the at least one series IDT, and the at least one shunt IDT reside over the piezoelectric layer. The at least one series IDT and the at least one shunt IDT are arranged between the two reflective structures.

Surface acoustic wave (SAW) structures with transverse mode suppression are disclosed. In one aspect, the SAW structure provides digits or fingers with broad interior terminal end shapes. By providing such shapes spurious modes above the resonance frequency of the SAW are suppressed thereby providing desired out of band rejection that helps satisfy design criteria such as keeping a higher Q value, a higher K2 value and better Temperature Coefficient of Frequency (TCF).

An improved DMS filter with electrode structures between a first port and a second port is provided. Wiring junctions are realized in multilayer crossing with dielectric material in between. There are insulating patches (L2) between crossing conductor layers (L1,L3). Signal wirings may be realized with multiple conductor layers (L1, L3) to reduce wiring resistance and the upper conductor layer (L3) of the signal wiring may partly overlap the insulating patches (L2). The insulating patches (L2) may extend over the acoustic path to achieve temperature compensation.