The present application discloses new approaches to providing “passive-off” protection for a B-TRAN-like device. Even if the control circuitry is inactive, AC coupling uses transient voltage on the external terminals to prevent forward biasing an emitter junction. Preferably the same switches which implement diode-mode and pre-turnoff operation are used as part of the passive-off circuit operation.

Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: injecting charge carriers at a first rate into an upper base of the transistor, the injecting at the first rate results in current flow through the transistor from an upper collector-emitter to a lower collector-emitter, and the current flow results in first voltage drop measured across the upper collector-emitter and the lower collector-emitter; and then, within a predetermined period of time before the end of a first conduction period of the transistor, injecting charge carriers into the upper base at a second rate lower than the first rate, the injecting at the second rate results in second voltage drop measured across the upper collector-emitter and the lower collector-emitter, the second voltage drop higher than the first voltage drop; and then making the transistor non-conductive at the end of the conduction period.

Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: injecting charge carriers at a first rate into an upper base of the transistor, the injecting at the first rate results in current flow through the transistor from an upper collector-emitter to a lower collector-emitter, and the current flow results in first voltage drop measured across the upper collector-emitter and the lower collector-emitter; and then, within a predetermined period of time before the end of a first conduction period of the transistor, injecting charge carriers into the upper base at a second rate lower than the first rate, the injecting at the second rate results in second voltage drop measured across the upper collector-emitter and the lower collector-emitter, the second voltage drop higher than the first voltage drop; and then making the transistor non-conductive at the end of the conduction period.

Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: injecting charge carriers at a first rate into an upper base of the transistor, the injecting at the first rate results in current flow through the transistor from an upper collector-emitter to a lower collector-emitter, and the current flow results in first voltage drop measured across the upper collector-emitter and the lower collector-emitter; and then, within a predetermined period of time before the end of a first conduction period of the transistor, injecting charge carriers into the upper base at a second rate lower than the first rate, the injecting at the second rate results in second voltage drop measured across the upper collector-emitter and the lower collector-emitter, the second voltage drop higher than the first voltage drop; and then making the transistor non-conductive at the end of the conduction period.

Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: injecting charge carriers at a first rate into an upper base of the transistor, the injecting at the first rate results in current flow through the transistor from an upper collector-emitter to a lower collector-emitter, and the current flow results in first voltage drop measured across the upper collector-emitter and the lower collector-emitter; and then, within a predetermined period of time before the end of a first conduction period of the transistor, injecting charge carriers into the upper base at a second rate lower than the first rate, the injecting at the second rate results in second voltage drop measured across the upper collector-emitter and the lower collector-emitter, the second voltage drop higher than the first voltage drop; and then making the transistor non-conductive at the end of the conduction period.

A method for controlling an electronic semiconductor switch connected in a load current circuit, the semiconductor switch being connected between an input terminal routed to a source and an output terminal of the load current circuit routed to a load. A control circuit is connected to a supply voltage and has a bridge circuit connected on the primary side to a transformer and to the supply voltage. A load circuit is connected to the transformer on the secondary side, the load circuit having a driver circuit for the semiconductor switch. A threshold value signal is routed to the bridge circuit on the control side. The bridge circuit generates a primary signal which is transmitted as a secondary signal to the load circuit that is galvanically isolated from the control circuit, and wherein the secondary signal is fed to the driver circuit, which generates a drive signal for the semiconductor switch.

The present application discloses new approaches to providing passive-off protection for a B-TRAN-like device. Even if the control circuitry is inactive, AC coupling uses transient voltage on the external terminals to prevent forward biasing an emitter junction. Preferably the same switches which implement diode-mode and pre-turnoff operation are used as part of the passive-off circuit operation.

A method for controlling an electronic semiconductor switch connected in a load current circuit, the semiconductor switch being connected between an input terminal routed to a source and an output terminal of the load current circuit routed to a load. A control circuit is connected to a supply voltage and has a bridge circuit connected on the primary side to a transformer and to the supply voltage. A load circuit is connected to the transformer on the secondary side, the load circuit having a driver circuit for the semiconductor switch. A threshold value signal is routed to the bridge circuit on the control side. The bridge circuit generates a primary signal which is transmitted as a secondary signal to the load circuit that is galvanically isolated from the control circuit, and wherein the secondary signal is fed to the driver circuit, which generates a drive signal for the semiconductor switch.

The present application discloses new approaches to providing passive-off protection for a B-TRAN-like device. Even if the control circuitry is inactive, AC coupling uses transient voltage on the external terminals to prevent forward biasing an emitter junction. Preferably the same switches which implement diode-mode and pre-turnoff operation are used as part of the passive-off circuit operation.

A circuit for strengthening load transient response compensation is provided, including a comparator, a first MOSFET and a second MOSFET. The comparator compares a system voltage of an electronic device with a reference voltage. The first MOSFET is coupled to the comparator and a first power supply. The second MOSFET is coupled to the comparator and a second power supply of the electronic device. When an external device is connected to the electronic device such that the system voltage is lower than the reference voltage, the comparator outputs a low-level signal and the first MOSFET becomes conductive, so that the external device is powered by the first power supply.