According to one embodiment of the present disclosure, a device comprises a latching circuitry, where the latching circuitry comprises at least one correlated electron random access memory (CeRAM) element. The latching circuitry further comprises a control circuit coupled to the at least one CeRAM element. The control circuit is configured to receive at least one control signal. Based on the at least one control signal, perform at least one of storing data into the latching circuitry and outputting data from the latching circuitry.

A dynamic D flip-flop with an inverted output involves an input end (101) used for receiving input data; an output end (102) used for providing output data to respond to the input data; a clock signal end (103) used for receiving a clock signal; a first latch (104) used for latching the input data from the input end (101) and performing inverting transmission on the input data under the control of the clock signal; a second latch (105) used for latching data from the first latch (104) and performing inverting transmission on the data latched by the first latch (104) under the control of the clock signal; and an inverter (106) used for performing inverting output on the data received from the second latch (105), the first latch (104), the second latch (105), and the inverter (106) being sequentially connected in series between the input end and the output end.

According to one general aspect, an apparatus may include a latch circuit configured to, depending in part upon a state of an enable signal, substantially pass the first clock signal to an output signal. The latch circuit may include at least two transistors configured to essentially perform a NAND function and controlled by a second clock signal, wherein the at least two transistors are configured to alter the timing of the substantial passing of the first clock signal to the output signal.

A flip-flop includes an input switching circuit configured to output an intermediate signal based on an input signal and at least one of a phase of a clock signal or a phase of an inverted clock signal, the phase of the inverted clock signal being opposite to the phase of the clock signal, and block application of a driving voltage to at least one circuit element of the input switching circuit in response to receiving a reset signal representing a reset operation of the flip-flop, and a latch circuit configured to generate an output signal based on the intermediate signal according to the at least one of the phase of the clock signal or the phase of the inverted clock signal.

Exemplary embodiments provide a sensing amplifier based flip-flop applying a nonvolatile memory device which is applicable to a mobile device which has a small hardware area, uses a small control signal, does not include a separate write circuit, has low writing power consumption, a short reading time and small power consumption, and requires a low power operation.

A flip-flop includes an input switching circuit configured to output an intermediate signal based on an input signal and at least one of a phase of a clock signal or a phase of an inverted clock signal, the phase of the inverted clock signal being opposite to the phase of the clock signal, and block application of a driving voltage to at least one circuit element of the input switching circuit in response to receiving a reset signal representing a reset operation of the flip-flop, and a latch circuit configured to generate an output signal based on the intermediate signal according to the at least one of the phase of the clock signal or the phase of the inverted clock signal.

In an embodiment, an electronic circuit includes: a supply management circuit for receiving an input supply voltage and providing a first supply voltage; and a main circuit configured to: when the input supply voltage becomes higher than a first threshold, cause the electronic circuit to transition into an initialization state in which an oscillator is enabled and configuration data is copied from an NVM to configuration registers, and then to transition into a standby state in which the oscillator is disabled and content of the configuration registers is preserved by the first supply voltage, and, upon reception of a wakeup event, cause the configuration data from the configuration registers to be applied to the first circuit, and cause the electronic circuit to transition into an active state in which the first oscillator is enabled and the first circuit is configured to operate based on the configuration data.

A level converting enable latch includes a level shifter circuit and a latch circuit. The level shifter circuit receives a first data input signal, and generates a first data output signal, wherein the first data input signal and the first data output signal have different voltage swings. The latch circuit sets a second data output signal in response to the first data output signal when a latch enable signal is set to a first logic value, and latches the second data output signal when the latch enable signal is set to a second logic value. The latch circuit includes a first control circuit. The first control circuit enables a latch feedback loop of the latch circuit when the latch enable signal is set to the second logic value, and disables the latch feedback loop of the latch circuit when the latch enable signal is set to the first logic value.

A data retention circuit is provided in the invention. The data retention circuit includes a master latch circuit, a slave latch circuit, and a control circuit. The control circuit is coupled to the master latch circuit and the slave latch circuit and receives a clock signal from a clock circuit and a power management signal from a power management unit (PMU). In a normal operation mode, the control circuit transmits the clock signal to the master latch circuit and the slave latch circuit. In sleep mode, power to the master latch circuit is switched off and the control circuit transmits the power management signal to the slave latch circuit.

A retention mode sequential logic circuit has no balloon latch, and all its P-channel transistors are disposed in a single N-well. In one example, the circuit is a retention flip-flop that has an active high retention signal input and an active low reset input. In another example, the circuit is a retention flip-flop that has an active low retention signal input and an active low reset input. In a multi-bit retention register example, one common clock and reset signal generation logic circuit drives multiple pairs of latches. Each retention mode logic circuit described has a low transistor count, is implemented with a single N-well, exhibits low retention mode power consumption, is not responsive to a reset signal in the retention mode, and has a fast response time when coming out of retention mode operation.