A charge pump device includes first to third current source circuits, a first switch, and a second switch. The first current source circuit is implemented with a first type transistor, and provides a first current to an output node. The first switch is selectively turned on according to a first control signal. When the first switch is turned on, the second current source circuit drains a second current from the output node. The second switch is selectively turned on according to a second control signal. Each of the first switch and the second switch is implemented with a second type transistor, and a withstand voltage of the first type transistor is higher than a withstand voltage of the second type transistor. When the second switch is turned on, the third current source circuit drains a third current from the output node.

A charge pump driver circuit comprises an output stage and a current generator component. The output stage is arranged to receive at an input node thereof a control current signal and comprises a resistance network coupled between the input node thereof and a reference voltage node and arranged to provide a resistive path through which the control current signal flows. The output stage is arranged to generate at an output node thereof a charge pump control voltage signal based on the voltage level at the input node thereof. The current generator component is arranged to receive an indication of a voltage level of a charge pump output signal, and to generate a feedback current dependent on the voltage level of the output signal, wherein the feedback current is injected into the resistive path of the resistance network through which the control current signal flows.

A variable capacitance circuit may operate a Metal Oxide Semiconductor (MOS) transistor or other semiconductor device to switch a capacitor in and out. Several circuits may be combined in a parallel network having offset bias voltages, such that the combined network may produce a variable capacitance over a large voltage range. The variable capacitance circuit may be incorporated into a phase locked loop (PLL) circuit where similar devices may be configured to produce a voltage reference as part of the PLL circuitry. Such a circuit may be immune to temperature, process, or voltage variances, since the current pulse magnitude times the low pass filter resistance times the sensitivity of a controlled voltage oscillator can be held constant.

A charge pump has a first branch that includes a first node connected between a first pull-up switch and a first pull-down switch and a second branch that includes a second node connected between a second pull-up switch and a second pull-down switch. The second branch is connected in parallel with the first branch. The charge pump has a voltage equalization circuit to equalize a first voltage at the first node and a second voltage at the second node. A third branch includes a third node that is connected between a third pull-up switch and a third pull-down switch. The third node is connected to the second node. The third pull-up switch and the first pull-up switch are controlled by a common pull-up signal. The third pull-down switch and the first pull-down switch are controlled by a common pull-down signal.

A phase locked loop having a charge pump is described. The charge pump relies on close matching of FETs (Field Effect Transistor) electrical parameters to FETs in a current reference circuit. To achieve close matching of FET electrical performance, FEOL (Front End Of Line), comprising all FET shapes, of the current pump is identical in shapes and layout to the current reference circuit. BEOL (Back End Of Line) differs between the charge pump and the current reference circuit. The charge pump and the current reference circuit are arranged in a row. A shield circuit having FEOL shapes and layout identical to the current pump may be placed at each end of the row.

A phase synchronization circuit includes: an oscillation circuit that includes a variable current generation unit that generates a variable current of a current amount corresponding to a control voltage and a fixed current generation unit that generates a fixed. current of a current amount corresponding to a correction code and generates an output clock signal having a frequency corresponding to the total current amount of the variable current and the fixed current; a feedback circuit that generates a feedback clock signal based on the output clock signal; a control voltage generation circuit that generates the control voltage to make a frequency of the output clock signal become a desired frequency in a normal operation mode; and a correction code generation circuit that generates the correction code in a calibration mode, in which in the calibration mode, the control voltage generation circuit outputs a fixed one of the control voltage.

A semiconductor device has a current controlled oscillation circuit configured to generate an oscillation clock in response to a current supplied, a first circuit configured to output a first signal when a phase of the oscillation clock is later than a phase of reception data, and to output a second signal when a phase of the oscillation clock is earlier than a phase of the reception data, and a current control circuit configured to control a current to be supplied to the current controlled oscillation circuit such that the number of times of output of the first signal from the first circuit matches the number of times of output of the second signal from the first circuit.

A variable capacitance circuit may operate a Metal Oxide Semiconductor (MOS) transistor or other semiconductor device to switch a capacitor in and out. Several circuits may be combined in a parallel network having offset bias voltages, such that the combined network may produce a variable capacitance over a large voltage range. The variable capacitance circuit may be incorporated into a phase locked loop (PLL) circuit where similar devices may be configured to produce a voltage reference as part of the PLL circuitry. Such a circuit may be immune to temperature, process, or voltage variances, since the current pulse magnitude times the low pass filter resistance times the sensitivity of a controlled voltage oscillator can be held constant.

One example charge pump is provided. The example charge pump includes a degeneration circuit, a charging current source transistor, a switch circuit and a discharging current source transistor. The charging current source transistor provides a charging current. The degeneration circuit is coupled between a first terminal of the charging current source transistor and a power supply terminal. The degeneration circuit degrades a first voltage corresponding to the power supply terminal to a second voltage. The switch circuit is coupled between a second terminal of the charging current source transistor and a load. The switch circuit controls a charging current output to the load.

Disclosed are a control signal pulse width extraction-based phase-locked acceleration circuit and a phase-locked loop system, the phase-lock acceleration circuit includes a pulse width extraction control circuit and a current injection switch module; the control output terminal of the pulse width extraction control circuit is connected to the current injection control terminal of the current injection switch module, and the stepping current control terminal of the current injection switch module and the driving input terminal of the pulse width extraction control circuit are both connected to the preset control signal output end of a phase frequency detector for use in controlling, according to pulse width changes of signals outputted by the preset control signal output end, the current injection switch module to inject charges until the phases of a reference clock signal and feedback clock signal inputted by the phase frequency detector are synchronized.