Patent classifications
H03M1/068
Radio-frequency digital-to-analog converter system
A digital-to-analog converter system has digital-to-analog converters, a common output, and a digital controller for transmitting first codes to one of the converters at a radio-frequency digital rate, and for transmitting second codes to another one of the converters at the same rate. The digital controller includes a timing system for operating each converter at the digital rate in a return-to-zero configuration, such that a signal from the first converter is transmitted to the common output while the second converter is reset, and vice versa. The digital-to-analog converter system can generate a radio-frequency analog signal having signals in first and second Nyquist zones simultaneously.
Compensated digital-to-analog converter (DAC)
A circuit includes a digital-to-analog converter (DAC) and a compensation circuit. The DAC has a first terminal and a second terminal. The compensation circuit has a third terminal and a fourth terminal. The third terminal is coupled to the first terminal, and the fourth terminal is coupled to the second terminal. The compensation circuit is configured to source current into the first terminal responsive to an increase in voltage on the second terminal, and to sink current from the first terminal responsive to a decrease in voltage on the second terminal.
HIGH VOLTAGE DEVICE
Semiconductor devices and methods are provided. A semiconductor device according to the present disclosure includes a substrate having a first area and a second area, a plurality of fin structures extending along a direction over the first area and the second area of the substrate, a first transistor and a second transistor in the first area, a first isolation structure disposed between the first transistor and the second transistor, a first isolation structure disposed between the first transistor and the second transistor, a third transistor and a fourth transistor in the second area, and a second isolation structure disposed between the third transistor and the fourth transistor. The first isolation structure includes a first width along the direction and the second isolation structure includes a second width along the direction. The second width is greater than the first width.
Current steering cell with code-dependent nonlinearity cancellation and fast settling for low-power low-area high-speed digital-to-analog converters
Systems and techniques relating to a digital-to-analog converter (DAC) are described. A described DAC cell includes a differential switch pair coupled with a cross-coupled switch pair. Gate terminals of the differential switch pair are arranged to respectively receive an input signal to the cell and an inverted version of the input signal to respectively drive the gate terminals of the differential switch pair. Gate terminals of the cross-coupled switch pair are arranged to respectively receive the input signal and the inverted version of the input signal to respectively drive the gate terminals of the cross-coupled switch pair. The cross-coupled switch pair is configured to reduce or eliminate net differential transient current between switch output terminals of the differential switch pair. A current-to-voltage converter coupled with the switch output terminals of the differential switch pair generates a voltage that forms at least a portion of an output of the digital-to-analog converter.
Voltage-to-time converter architecture for time-domain analog-to-digital converter
A voltage-to-time converter (VTC) for a time-domain analog-to-digital converter is disclosed, which provides a time-domain analog-to-digital converter (T-ADC) with low power consumption and high precision. By combining the advantages of current-starving technology, current mirror technology, and body biasing technology, compared with the traditional structure, the VTC and T-ADC achieve excellent performance, such as low power consumption, high linearity, wide input dynamic range, and strong anti-interference to PVT variations. Compared with the traditional voltage-to-time converter, the disclosed voltage-to-time converter has a wider input dynamic range and higher linearity. The input voltage is connected to transistors in the circuit as a body bias, resulting in a very small body current, and no apparent increase in power consumption. The design of a low-power voltage-to-time converter is realized.
INPUT IMPEDANCE BOOSTING APPARATUS ROBUST AGAINST PARASITIC COMPONENTS
Disclosed is an input impedance boosting apparatus. More particularly, an input impedance boosting apparatus including an analog-to-digital converter; an input capacitor connected to an input terminal of the analog-to-digital converter and a ground line and including a first shielding metal formed thereunder; a feedback capacitor connected onto a positive feedback loop of the analog-to-digital converter and including a second shielding metal formed thereunder; and an impedance booster connected to both ends of the feedback capacitor and configured to boost an input impedance based on a first parasitic component formed between the input capacitor and the first shielding metal and a second parasitic component formed between the feedback capacitor and the second shielding metal is provided.
DAC duty cycle error correction
Digital to analog converter generates an analog output corresponding to a digital input by controlling DAC cells using bits of the digital input. The DAC cells individually make a contribution to the analog output. Due to process, voltage, and temperature variations, the DAC cells may have duty cycle error or mismatches. To compensate for the duty cycle error of a DAC cell, a small amount of charge is injected into a low-impedance node of a DAC cell when the data signal driving the DAC cell transitions, or changes state. The small amount of charge is generated using a capacitive T-network, and the polarity of the charge injected is opposite of the error charge caused by duty cycle error. The opposite amount of charge thus compensates or cancels out the duty cycle error, and duty cycle error present at the output of the DAC cell is reduced.
COMPENSATED DIGITAL-TO-ANALOG CONVERTER (DAC)
A circuit includes a digital-to-analog converter (DAC) and a compensation circuit. The DAC has a first terminal and a second terminal. The compensation circuit has a third terminal and a fourth terminal. The third terminal is coupled to the first terminal, and the fourth terminal is coupled to the second terminal. The compensation circuit is configured to source current into the first terminal responsive to an increase in voltage on the second terminal, and to sink current from the first terminal responsive to a decrease in voltage on the second terminal.
DAC DUTY CYCLE ERROR CORRECTION
Digital to analog converter generates an analog output corresponding to a digital input by controlling DAC cells using bits of the digital input. The DAC cells individually make a contribution to the analog output. Due to process, voltage, and temperature variations, the DAC cells may have duty cycle error or mismatches. To compensate for the duty cycle error of a DAC cell, a small amount of charge is injected into a low-impedance node of a DAC cell when the data signal driving the DAC cell transitions, or changes state. The small amount of charge is generated using a capacitive T-network, and the polarity of the charge injected is opposite of the error charge caused by duty cycle error. The opposite amount of charge thus compensates or cancels out the duty cycle error, and duty cycle error present at the output of the DAC cell is reduced.
High Voltage Device
Semiconductor devices and methods are provided. A semiconductor device according to the present disclosure includes a substrate having a first area and a second area, a plurality of fin structures extending along a direction over the first area and the second area of the substrate, a first transistor and a second transistor in the first area, a first isolation structure disposed between the first transistor and the second transistor, a first isolation structure disposed between the first transistor and the second transistor, a third transistor and a fourth transistor in the second area, and a second isolation structure disposed between the third transistor and the fourth transistor. The first isolation structure includes a first width along the direction and the second isolation structure includes a second width along the direction. The second width is greater than the first width.