Some embodiments are directed to a generator and separator assembly for generating ions via atmospheric pressure, low temperature plasma and separating the generated ions. The generator and separator assembly include a plasma generator for generating the generating atmospheric pressure, low temperature plasma that is configured to eject positively and negatively ions. A separator is disposed to receive the positively and negatively ions ejected from the plasma generator, and includes a first separator electrode; a second separator electrode spaced from the first separator electrode; and a separator power supply that supplies electric power in the form of at least one of different voltages and different polarities to the first and second electrodes ranging from 0 kV and 10 kV, such that the received positively charged ions are redirected in one direction and the received negatively charged ions are redirected to another direction different from the one direction.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Energy is generated from pulsed electric power sources applied to a gas medium that includes hydrogen. A sealed reactor chamber contains hydrogen. A plasma power supply, such as a DC, AC, or RF power supply, generates a plasma inside the chamber. The pulse energy generator systems use pulsed electric power for the conversion of molecular hydrogen into atomic hydrogen. An inner surface of the reactor chamber is coated with a catalyst to facilitate the reformation of molecular hydrogen from atomic hydrogen under conditions that release excess energy. The catalyst may include tungsten, nickel, titanium, platinum, palladium, and mixtures thereof. A plasma pulse controller connected to the plasma power supply turns the power supply on and off to generate plasma pulses inside the reactor chamber. A pulse time duration may range from 1 nanosecond to 1 millisecond and a dead time between pulses may range from 20 milliseconds to 0.3 seconds.

An RF generating device 2, which attenuates harmonics in RF power amplified by an RF amplifier and supplied to plasma generating electrodes, includes an RF generation unit 201 that generates a composite wave by combining a fundamental wave with a compensation wave which is made by inverting a phase of a harmonic generated by inputting the fundamental wave.

Power circuitry for cold plasma generation; optionally plasma for therapeutic use. Cold plasma generation occurs at the distal end of a catheter-like device which is flexible, narrow (e.g., less than 5 mm in diameter), and longitudinally extended to reach, e.g., 50-100 cm into body cavities. A cable used for power transmission is a part of the power generating circuit, its intrinsic impedance being a major contributor to and constraint on the time constant of an entraining RC circuit whose resonant frequency entrains the frequency of power generation. In some embodiments, inductive transformer coupling to the entraining/transmission line circuit is used to generate voltage gain. In some embodiments, transformer coupling is divided into a plurality of stages. This potentially enables practically achieving high transmission frequencies with higher gain, lowered sensitivity to variability in distal portions of the entraining RC circuit, and/or longer transmission lines compared to a single-stage transformer configuration.

A high-frequency power supply device is provided with an AC-DC converter for converting an input from a three-phase alternating-current source into a direct current and a high-frequency amplifier including multiple FET elements and outputting a high-frequency alternating-current power, with the output of the AC-DC converter being directly input to the high-frequency amplifier, and further includes a phase conversion circuit for imparting phase differences to gate signals to be input to the multiple FET elements so as to offset fluctuation components included in the direct current. The device generates the high-frequency alternating-current power by converting the input from the three-phase alternating-current source into the direct current, directly inputting the direct current to the high-frequency amplifier, imparting the phase differences to the gate signals to be input to the multiple FET elements so as to offset the fluctuation components included in the direct current, and performing switching.

Disclosed is a device having an oscillator and high voltage transformer connected to a glass-like tube filled with an inert gas or a mixture of inert gasses. The tube is located at the end of a wand having a handle. The output of the transformer is an RF high voltage signal. The output of the transformer is fed to the tube through a high voltage wire, where the signal excites the gas to produce a plasma-like beam. The tube is then applied to a patient's skin to aid in healing and the relief of additional ailments. The field generated by the tube interacts with the cells in the patient to increase transmembrane potential, stimulate ATP production, and inject negative ions and ozone into the surface of the user's skin to combat infection and disease.

A pulsed radio frequency inductive plasma source and method are provided. The source may generate plasma at gas pressures from 1 torr to 2000 torr. By utilizing high power RF generation from fast solid state switches such as Insulated-Gate Bipolar Transistor (IGBT) combined with the resonance circuit, large inductive voltages can be applied to RF antennas to allow rapid gas breakdown from 1-100 μs. After initial breakdown, the same set of switches or an additional rf pulsed power systems are utilized to deliver large amount of rf power, between 10 kW to 10 MW, to the plasmas during the pulse duration of 10 μs-10 ms. In addition, several methods and apparatus for controlling the pulse power delivery, timing gas and materials supply, constructing reactor and substrate structure, and operating pumping system and plasma activated reactive materials delivery system will be disclosed. When combined with the pulsed plasma generation, these apparatuses and the methods can greatly improve the applicability and the efficacy of the industrial plasma processing.

A plasma generating device that improves plasma generating efficiency can further accommodate changes in plasma generating state because of changes in conditions of surroundings and the like. The plasma generating device is provided with an electromagnetic wave radiating device, which has an electromagnetic wave generating device that oscillates electromagnetic waves and a radiating antenna that radiates electromagnetic waves oscillated by the electromagnetic wave generating device, and a control device that controls the electromagnetic wave radiating device. The electromagnetic wave radiating device is provided with a power detector that detects traveling wave power output by the electromagnetic wave generating device and reflected wave power reflected from the radiating antenna, and the control device automatically controls the oscillation pattern for the electromagnetic waves on the basis of the proportion of the value for the reflected wave power to the value for the traveling wave power detected by the power detector.

A pulsed radio frequency inductive plasma source and method are provided. The source may generate plasma at gas pressures from 1 torr to 2000 torr. By utilizing high power RF generation from fast solid state switches such as Insulated-Gate Bipolar Transistor (IGBT) combined with the resonance circuit, large inductive voltages can be applied to RF antennas to allow rapid gas breakdown from 1-100 μs. After initial breakdown, the same set of switches or an additional rf pulsed power systems are utilized to deliver large amount of rf power, between 10 kW to 10 MW, to the plasmas during the pulse duration of 10 μs-10 ms. In addition, several methods and apparatus for controlling the pulse power delivery, timing gas and materials supply, constructing reactor and substrate structure, and operating pumping system and plasma activated reactive materials delivery system will be disclosed. When combined with the pulsed plasma generation, these apparatuses and the methods can greatly improve the applicability and the efficacy of the industrial plasma processing.