A multi-layer metal core printed circuit board (MCPCB) has mounted on it at least one or more heat-generating LEDs and one or more devices configured to provide current to the one or more LEDs. The one or more devices may include a device that carries a steep slope voltage waveform. Since there is typically a very thin dielectric between the patterned copper layer and the metal substrate, the steep slope voltage waveform may produce a current in the metal substrate due to AC coupling via parasitic capacitance. This AC-coupled current may produce electromagnetic interference (EMI). To reduce the EMI, a local shielding area may be formed between the metal substrate and the device carrying the steep slope voltage waveform. The local shielding area may be conductive and may be electrically connected, to a DC voltage node adjacent to the one or more devices.

A multi-layer coating on an outer surface of a substrate includes a first layer applied directly to the outer surface of the substrate. The first layer includes diamond-like carbon (DLC) configured to mitigate metal whisker formation. A second layer is applied on a top surface of the first layer. The second layer is a conformal coating that includes a second material configured to bind to the top surface of the first layer and fill any microfractures that may form in the first layer. Optionally, a third layer is applied on a top surface of the second layer and includes DLC configured to protect the second layer from oxidation and degradation.

The present invention proposes a carrier substrate (1) for electrical components (13), the carrier substrate (1) having a component side (4) and a cooling side (5) which is opposite the component side (4) and has a cooling structure (30), the carrier substrate (1) comprising a primary layer (10) which faces the component side (4) and is produced from ceramic for electrical insulation, and a secondary layer (20) which faces the cooling side (5) for stiffening the carrier substrate (1), characterized in that a metallic intermediate layer (15) is arranged between the primary layer (10) and the secondary layer (20) for heat transfer from the component side (4) to the cooling side (5), the metallic intermediate layer (15) being thicker than the primary layer (10) and/or the secondary layer (20).

A semiconductor device including a semiconductor chip disposed on a substrate having a conductive pattern, an insulating plate and a metal plate that are sequentially formed and respectively have the thicknesses of T2, T1 and T3. The metal plate has a plurality of depressions formed on a rear surface thereof. In a side view, a first edge face, which is an edge face of the conductive pattern, is at a first distance away from a second edge face that is an edge face of the metal plate, and a third edge face, which is an edge face of the semiconductor chip, is at a second distance away from the second edge face. Each depression is located within a depression formation distance from the first edge face, where: 0<depression formation distance≤(0.9×T1.sup.2/first distance), and/or (1.1×T1.sup.2/first distance)≤depression formation distance<second distance.

A monolithic substrate including a silica material fused to bulk copper is provided for coupling with electronic components, along with methods for making the same. The method includes arranging a base mixture in a die mold. The base mixture includes a bottom portion with copper micron powder and an upper portion with copper nanoparticles. The method includes arranging a secondary mixture on the upper portion of the base mixture. The secondary mixture includes a bottom portion with silica-coated copper nanoparticles and an upper portion with silica nanoparticles. The method includes heating and compressing the base mixture and the secondary mixture in the die mold at a temperature, pressure, and time sufficient to sinter and fuse the base mixture with the secondary mixture to form a monolithic substrate. The resulting monolithic substrate defines a first major surface providing thermal conductivity, and a second major surface providing an electrically resistive surface.

An electronics module (100), especially a power electronics module, comprising a metal-ceramic substrate (1) serving as a carrier and having a ceramic element (10) and a primary component metallization (21), an insulation layer (40) directly or indirectly connected to the primary component metallization (21), and a secondary component metallization (22) which is connected to the side of the insulation layer (40) facing away from the metal-ceramic substrate (1) and is especially isolated from the primary component metallization (21) using the insulation layer (40), wherein the ceramic element (10) has a first size (L1, D1) and the insulation layer (40) has a second size (L2, D2) and a ratio of the second size (L2, D2) to the first size (L1, D1) has a value smaller than 0.8, to form an island-like insulation layer (40) on the primary component metallization (21).

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of nitrogen-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, between the copper member and the ceramic member, an active metal nitride layer containing nitrides of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and a Mg solid solution layer in which Mg is solid-dissolved in a Cu matrix is formed between the active metal nitride layer and the copper member, and Cu-containing particles composed of either one or both of Cu particles and compound particles of Cu and the active metal are dispersed in an interior of the active metal nitride layer.

A power semiconductor module includes a first substrate, wherein the first substrate includes aluminum, a first aluminum oxide layer arranged on the first substrate, a conductive layer arranged on the first aluminum oxide layer, a first semiconductor chip, wherein the first semiconductor chip is arranged on the conductive layer and is electrically connected thereto, and an electrical insulation material enclosing the first semiconductor chip, wherein the first aluminum oxide layer is configured to electrically insulate the first semiconductor chip from the first substrate.

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of nitrogen-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, between the copper member and the ceramic member, an active metal nitride layer containing nitrides of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and a Mg solid solution layer in which Mg is solid-dissolved in a Cu matrix is formed between the active metal nitride layer and the copper member, and Cu-containing particles composed of either one or both of Cu particles and compound particles of Cu and the active metal are dispersed in an interior of the active metal nitride layer.

A device includes an electrically conductive substrate, one or more intermediate layer(s) in contact with the electrically conductive substrate and/or one or more interconnect layer, and a surface mounted electrical component contacting the interconnect layer.