A circuit board element includes a glass substrate, a first dielectric layer, and a first patterned metal layer. The glass substrate has an edge. The first dielectric layer is disposed on the glass substrate and has a central region and an edge region. The edge region is in contact with the edge of the glass substrate, and the thickness of the central region is greater than the thickness of the edge region. The first patterned metal layer is disposed on the glass substrate and in the central region of the first dielectric layer.

A component carrier includes a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure; a barrier structure; and a component. The component has at least one pad embedded in the stack and/or in the barrier structure. At least a portion of one of the electrically conductive layer structure and the at least one pad includes copper in contact with the barrier structure.

A package carrier includes a substrate, at least one interposer disposed in at least one opening of the substrate, a conductive structure layer, a first build-up structure, and a second build-up structure. The interposer includes a glass substrate, at least one conductive via, at least one first pad, and at least one second pad. The conductive via passes through the glass substrate, and the first and the second pads are disposed respectively on an upper surface and a lower surface of the glass substrate opposite to each other and are connected to opposite ends of the conductive via. The conductive structure layer is disposed on the substrate and is structurally and electrically connected to the first and the second pads. The first and the second build-up structures are disposed respectively on the first and the second surfaces of the substrate and are electrically connected to the conductive structure layer.

A circuit board with improved heat dissipation function and a method for manufacturing the circuit board are provided. The circuit board includes a heat dissipation substrate, an insulating layer on the heat dissipation substrate, an electronic component, a base layer on the insulating layer, and a circuit layer on the base layer. The heat dissipation substrate includes a phase change structure and a heat conductive layer wrapping the phase change structure. The heat dissipation substrate defines a first through hole. The insulating layer defines a groove for receiving the electronic component. A second through hole is defined in the circuit layer, the base layer, and the insulating layer. A bottom of the second through hole corresponds to the heat conductive layer. A heat conductive portion is disposed in the second through hole.

An electronics package is disclosed. The electronics package includes a first radio frequency (RF) substrate layer, a second RF substrate layer, and a plurality of conductive layers disposed adjacent to at least one of the first RF substrate layer and the second RF substrate layer and including an inner conductive layer disposed between and adjacent to both the first RF substrate layer and the second RF substrate layer. The inner conductive layer bonds the first RF substrate layer to the second RF substrate layer. The electronics package also includes a plurality of conductive interconnects extending through the first RF substrate layer and the second RF substrate layer and electrically coupled between at least two of the plurality of conductive layers.

A method of manufacturing an ultrasound imaging device involves forming an interposer structure, including forming a first metal material within openings through a substate and on top and bottom surfaces of the substrate, patterning the first metal material, forming a dielectric layer over the patterned first metal material, forming openings within the dielectric layer to expose portions of the patterned first metal material, filling the openings with a second metal material, forming a third metal material on the top and bottom surfaces of the substrate, and patterning the third metal material. The method further involves forming a packaging structure for an ultrasound-on-chip device, including attaching a multi-layer flex substrate to a carrier wafer, bonding a first side of an ultrasound-on-chip device to the multi-layer flex substrate, bonding a second side of the ultrasound-on-chip device to a first side of the interposer structure, and removing the carrier wafer.

Embodiments disclosed herein include electronic packages and methods of assembling such electronic packages. In an embodiment, an electronic package comprises a core, where the core comprises glass. In an embodiment, a hole is through a thickness of the core, and a plug fills the hole, where the plug comprises a polymeric material. In an embodiment, first layers are over the core, where the first layers comprise a dielectric material; and second layers are under the core, where the second layers comprise the dielectric material.

A circuit board with improved heat dissipation function and a method for manufacturing the circuit board are provided. The circuit board includes a heat dissipation substrate, an insulating layer on the heat dissipation substrate, an electronic component, a base layer on the insulating layer, and a circuit layer on the base layer. The heat dissipation substrate includes a phase change structure and a heat conductive layer wrapping the phase change structure. The heat dissipation substrate defines a first through hole. The insulating layer defines a groove for receiving the electronic component. A second through hole is defined in the circuit layer, the base layer, and the insulating layer. A bottom of the second through hole corresponds to the heat conductive layer. A heat conductive portion is disposed in the second through hole.

An electronic device including a connection element is provided. The connection element includes a first insulation layer and a second insulation layer. The first insulation layer has a first opening. A sidewall of the first insulation layer at the first opening has roughness different from roughness of a top surface of the first insulation layer. The second insulation layer is disposed on the first insulation layer, and the second insulation layer has a second opening. The sidewall of the first insulation layer at the first opening is exposed by the second opening. A method of fabricating an electronic device is also provided.

An electronic device including a connection element is provided. The connection element includes a first metal layer, a first insulation layer, and a second insulation layer. The first insulation layer is disposed on the first metal layer and has a first hole and a second hole. The second insulation layer is disposed on the first insulation layer. The first hole exposes a portion of the first metal layer, and the second insulation layer extends into the second hole. A method of fabricating an electronic device is also provided.