A semiconductor structure includes a substrate including a first semiconductor material, a first doped region disposed in the substrate and having a first conductivity type, a second doped region disposed in the substrate and separated from the first doped region, a first epitaxial region disposed in a cavity of the substrate, and a second epitaxial region disposed in the cavity of the substrate and connected to the first epitaxial region. The second doped region has a second conductivity type different than the first conductivity type. The first epitaxial region includes the first semiconductor material with an impurity of the second conductivity type, and the second epitaxial region includes a second semiconductor material different than the first semiconductor material.

A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

A diode comprises a p-doped region, an n-doped region, and a light-sensitive intrinsic region sandwiched laterally between the p-doped region and the n-doped region in a direction transverse to a direction of light propagation in the diode. The p-doped region is made of a first material doped with a first type of dopant and the n-doped region is made of a third material doped with a second type of dopant. The first material includes Si or SiGe. The third material includes Si or SiGe. The intrinsic region is made of a second material, that includes Ge, GeSn, or SiGe. The intrinsic region has a maximal lateral extension between two lateral ends of the intrinsic region of equal to or below 400 nm. The p-doped region and the n-doped region are in-situ doped such that the intrinsic region is not doped when the diode is produced.

The application discloses a solar cell and a preparation method for a solar cell. The preparation method for a solar cell comprises: sequentially forming a tunnel silicon oxide layer, an N-type doped polysilicon layer, and a back passivated anti-reflection film on a back surface of an N-type silicon substrate; performing grooving on the back passivated anti-reflection film, and forming a nickel metal layer in a grooved region; printing a back fine gate electrode on the nickel metal layer, and printing a back main gate electrode on the back passivated anti-reflection film, wherein the back fine gate electrode is electrically connected to the back main gate electrode.

Disclosed is solar cell, a photovoltaic module, and a method for manufacturing a photovoltaic module. The solar cell includes a substrate, first busbars and second busbars arranged on the substrate, first fingers connected to the first busbars, and second fingers connected to the second busbars. The first busbars and the second busbars have opposite polarities. The first fingers have a same polarity as the first busbars, and the second fingers have a same polarity as the second busbars. The substrate is provided with busbar pits. At least part of the first and second busbars are located in the busbar pits. Depths of the busbar pits range from 30 m to 50 m. Along a thickness direction of the substrate, ratios of the depths of the busbar pits to heights of the first busbars and/or the second busbars range from 10:3 to 6:5.

A pixel includes, on a first face, first trenches extending parallel to a first direction and regularly spaced in a second direction (orthogonal to the first direction) and second trenches extending parallel to the second direction and regularly spaced in the first direction. The first trenches include first notches, each first notch extending from a first trench and being aligned with a corresponding second trench. The second trenches include second notches, each second notch extending from a second trench and being aligned with a corresponding first trench.

The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

Disclosed are embodiments of a thin-film photovoltaic technology including a single-junction crystalline silicon solar cell with a photonic-plasmonic back-reflector structure for lightweight, flexible energy conversion applications. The back-reflector enables high absorption for long-wavelength and near-infrared photons via diffraction and light-concentration, implemented by periodic texturing of the bottom-contact layer by nanoimprint lithography. The thin-film crystalline silicon solar cell is implemented in a heterojunction design with amorphous silicon, where plasma enhanced chemical vapor deposition (PECVD) is used for all device layers, including a low-temperature crystalline silicon deposition step. Excimer laser crystallization is used to integrate crystalline and amorphous silicon within a monolithic process, where a thin layer of amorphous silicon is converted to a crystalline silicon seed layer prior to deposition of a crystalline silicon absorber layer via PECVD. The crystalline nature of the absorber layer and the back-reflector enable efficiencies higher than what is achievable in other thin-film silicon devices.

A solar cell is provided, including: a semiconductor substrate including a front surface and a rear surface arranged opposite to each other; an emitter located on the front surface of the semiconductor substrate; a front passivation layer located over the front surface of the semiconductor substrate; a tunneling layer located over the rear surface of the semiconductor substrate; a doped conductive layer located over a surface of the tunneling layer; a rear passivation layer located over a surface of the doped conductive layer; a front electrode in contact with the emitter; and a rear electrode in contact with the first doped conductive layer. The doped conductive layer includes a first doped conductive layer corresponding to a rear metallized region, and a second doped conductive layer corresponding to a rear non-metallized region. The first doped conductive layer has an oxygen content less than the second doped conductive layer.

In one aspect, a preparation method for a bifacial solar cell utilizes a method of deposition and then bombardment to form an intrinsic silicon layer, thus enhancing an ablation resistance of a solar cell, reducing a metal composite loss and a filing coefficient, and significantly improving an efficiency of an obtained solar cell. Moreover, in the bifacial solar cell of the present disclosure, compared with a second crystalline silicon doped layer, the intrinsic silicon layer has a higher number of SiH connected to mono-hydrogen atoms, a lower number of SiH.sub.2 connected to dihydrogen atoms, and fewer carrier recombination defects in the intrinsic silicon layer, thus improving field passivation performance.