An optoelectronic synaptic memristor includes: a bottom electrode layer, a porous structure layer modified with quantum dots, a two-dimensional material layer, a transparent top electrode layer, and a waveguide layer, which are arranged in sequence from top to bottom, wherein the waveguide is ridge shaped for light conduction, comprising a wedge-shaped output terminal, wherein: through the wedge-shaped output terminal of the waveguide, light is vertically injected into the two-dimensional material layer and the porous structure layer modified with the quantum dots. By integrating the waveguide and the optoelectronic memristor, the present invention obtains the highly controlled characteristics with high alignment and confinement for light effect on the device and has advantages in realizing optoelectronic synergy in the optoelectronic synaptic memristors. The present invention has strong controllability and excellent performance and can be widely used in high-density integration of storage and computing, artificial synapses, artificial intelligence, etc.

The perovskite solar cell (PSC) includes a first layer containing a conducting material coated glass plate as a substrate, a second layer containing copper doped nickel oxide, a third layer containing a perovskite, a fourth layer containing nitrogen (N)-doped graphene quantum dots, a fifth layer containing phenyl-C61-butyric acid methyl ester and a top layer including conductive layer. A method for producing the perovskite solar cell is also discussed.

A quantum device configured to be able to form an array of quantum dots, the device including for this: an active layer made of a semiconductor material; a plurality of first gates disposed along a plurality of rows; a plurality of second gates disposed along a plurality of columns perpendicular to the rows of the plurality of rows; a plurality of third gates, each third gate of the plurality of third gates being disposed at the intersection of one row of the plurality of rows and one column of the plurality of columns, each third gate being separated from the nearest third gates, on a row by a first gate and on a column by a second gate; a plurality of fourth gates, each fourth gate being disposed between two second gates along the rows and between two first gates along the columns.

According to an aspect of the present inventive concept there is provided a device for imaging of a microscopic object, the device comprising: an array of light sensitive areas sensitive to detect light spanning a wavelength range of at least 400-1200 nm; at least one light source comprising at least a first point of operation in which the at least one light source is configured to generate visible light, and a second point of operation in which the at least one light source is configured to generate infrared light, and being arranged to illuminate the microscopic object such that light is scattered by the microscopic object; wherein the array of light sensitive areas is configured to detect an interference pattern formed between the scattered light and non-scattered light; the device being configured to be set in a selected point of operation from the at least first and second points of operation, for detecting the interference pattern for imaging the microscopic object at a wavelength defined by the selected point of operation.

A superlattice structure for a thin film solar cell includes superimposed layers of nanocrystals and is configured to generate a flow of electrons across the layers when it is irradiated by a solar radiation. Each of the layers includes an array of nanocrystals which have substantially the same size and shape and the nanocrystals of each of the layers have different size and/or different shape with respect to the nanocrystals of the other layers. The layers are sorted in such an order that the superlattice structure is anisotropic. A thin film solar cell having the superlattice structure and a method for making the superlattice structure is related.

Ligand-capped scattering nanoparticles, curable ink compositions containing the ligand-capped scattering nanoparticles, and methods of forming films from the ink compositions are provided. Also provided are cured films formed by curing the ink compositions and photonic devices incorporating the films. The ligands bound to the inorganic scattering nanoparticles include a head group and a tail group. The head group includes a polyamine chain and binds the ligands to the nanoparticle surface. The tail group includes a polyalkylene oxide chain.

In one aspect, optoelectronic devices are described herein. In some implementations, an optoelectronic device comprises a photovoltaic cell. The photovoltaic cell comprises a space-charge region, a quasi-neutral region, and a low bandgap absorber region (LBAR) layer or an improved transport (IT) layer at least partially positioned in the quasi-neutral region of the cell.

A photovoltaic device includes one or more features that taken alone or in combination enhance its efficiency. Some embodiments may comprise a tandem solar device in which a top PV cell is fabricated upon a front transparent substrate, that also serves as the top encapsulating substance. The top PV cell including the front encapsulating substance is then bonded (e.g., using adhesive) to a bottom PV cell in order to complete the tandem device. Using the same transparent, insulating element as both front encapsulating substance and a substrate for fabricating the top PV cell, obviates to the need to provide a separate structure (with resulting interfaces) to perform the latter role. For tandem and non-tandem PV devices, a Through-Substrate-Via (TSV) structure may extend through an insulating substrate in order to provide contact with an opposite side (e.g., back electrode). Embodiments may find particular use in fabricating shingled perovskite photovoltaic solar cells.

A photoluminescent liquid crystal display includes: a liquid crystal panel including a lower substrate, an upper substrate, a liquid crystal layer interposed between the upper and lower substrates, and a photoluminescent color filter layer disposed between the upper substrate and the liquid crystal layer; an optical device disposed on the upper substrate; a polarizing plate disposed under the lower substrate; and a backlight unit disposed under the polarizing plate and which emits blue light, where the photoluminescent color filter layer includes a first color filter which emits polarized red light, a second color filter which emits polarized green light, and a third color filter which emits polarized blue light, and the first color filter and the second color filter include a semiconductor nanocrystal-polymer composite.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.