Synaptic resistors (synstors), and their method of manufacture and integration into exemplary circuits are provided. Synstors are configured to emulate the analog signal processing, learning, and memory functions of synapses. Circuits incorporating synstors are capable of performing signal processing and learning concurrently in parallel analog mode with speed, energy efficiency, and functions superior to computers.

In various embodiments, there is provided a controlled organic semiconductor device comprising a crystalline first organic semiconductor layer on or over a substrate, the crystalline first organic semiconductor layer having a first conductivity type; and a crystalline second organic semiconductor layer on or over the first organic semiconductor layer, the crystalline second organic semiconductor layer having a second conductivity type, the first conductivity type being different from the second conductivity type.

A gateless P-N junction metrolog includes: a junction member including: a p-interface; and an n-interface disposed laterally and adjacent to the p-interface; and a p-n junction disposed at where the p-interface and n-interface contact; a drain electrode disposed on the junction member; a source electrode disposed on the junction member such that the source electrode is spaced apart from and opposing the drain electrode; an n-polymer disposed on the n-interface of the junction member; a p-polymer disposed on the p-interface of the junction member such that the n-polymer is interposed between the p-polymer and the n-interface; a mediation polymer disposed on the p-polymer such that the p-polymer is interposed between the mediation polymer and the junction member; and a mediator disposed in the mediation polymer and that receives electrons from the junction member in forming the p-interface.

A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.

A method of making a stack of the type comprising a first electrode, an active layer, and a second electrode, for use in an electronic device, in particular of the organic photodetector type or the organic solar cell type, the method comprising the following steps: a) depositing a first layer (2) of conductive material on a substrate (1) in order to form the first electrode; b) depositing an active layer (3) in the form of a thin organic semiconductor layer, this layer including non-continuous zones (30); c) locally eliminating the first conductive layer (2) through the non-continuous zones (30) of the active layer by chemical attack; and d) depositing a second layer (4) of conductive material on the active layer (3) in order to form the second conductive electrode.

The present disclosure relates to a semiconductor device comprising a first electrode, a second electrode, a third electrode, a fourth electrode, an insulating layer, and a nano-heterostructure. The nano-heterostructure comprises a first surface and a second surface. The first metallic carbon nanotube is located on the first surface and extends in a first direction. The semiconducting carbon nanotube is located on the first surface and extends in the first direction. The semiconducting carbon nanotube is parallel and spaced away from the first metallic carbon nanotube. The second metallic carbon nanotube is located on the second surface and extends in a second direction. An angle forms between the first direction and the second direction.

Synaptic resistors (synstors), and their method of manufacture and integration into exemplary circuits are provided. Synstors are configured to emulate the analog signal processing, learning, and memory functions of synapses. Circuits incorporating synstors are capable of performing signal processing and learning concurrently in parallel analog mode with speed, energy efficiency, and functions superior to computers.

An organic single-crystalline heterojunction composite film is provided. The organic single-crystalline heterojunction composite film comprises at least one organic single-crystalline efficiently coupled unit. The organic single-crystalline efficiently coupled unit constructed by two organic single-crystalline thin films laminated together, with highly efficient lamination. The organic single-crystalline heterojunction composite film of the present disclosure has multiple advantages, such as highly ordered molecular arrangement, few defects, long exciton diffusion length, and excellent charge carrier transportation in the single-crystalline layer, moreover, integration of optoelectronic function and flexibility could be realized. The preparation method of organic single-crystalline heterojunction composite film is also provided. High-quality organic single-crystalline heterojunction composite film has a wide range of applications in the fields of sensors, photodetectors, solar cells, displays, memory devices, complementary circuits, and so on.

The invention relates to organic components for converting light into electrical energy, comprising integrated bypass diodes, which are integrated into the optoelectronic stack, in order to increase the efficiency and the service life of the optoelectronic component in the case of partial shading/shading of individual cells or cell segments. Said components can also be produced for large-area applications in the roll-to-roll method.

A semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. A thickness of the semiconductor structure ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method. The carbon nanotube, the semiconductor structure and the conductive film are stacked with each other to form a multi-layered stereoscopic structure.