The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

An electronic component (10) comprising a plurality of switching elements (1) which comprise, in this sequence, a first electrode (16), a molecular layer (18) bonded to a substrate, and a second electrode (20), where the molecular layer essentially consists of molecules (M) which contain a connecting group (V) and an end group (E) having a polar or ionic function, is suitable as memristive device for digital information storage.

An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.

The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.

The disclosure provides a novel system and method of storing multi-bit information, including providing a nano-channel-based polymer memory device, the device having at least one memory cell comprising at least two addition nano-channels, each of the addition nano-channels arranged to add a unique chemical construct (or codes) to the polymer when the polymer enters the respective addition nano-channel, the polymer having a bead or origami on a non-writing end of the polymer; each nano-channel having a nano-port constriction having a port width which allows the polymer to pass through the nano-port, and does not allow the bead or origami to pass through and does not allow addition or deblocking enzymes (or beads attached thereto) to pass through the nano-port; successively steering the polymer through the nanopore into the addition nano-channels to add the codes to the polymer based on a predetermined digital data pattern to create the digital data pattern on the polymer.

A method for configuring a reconfigurable physical unclonable function (PUF) based on a device with spin-orbit torque (SOT) effect is provided. The disclosure uses SOT or magnetic field to change the magnetic moment. After the current or magnetic field is removed, the magnetic moment returns to the easy axis direction. Under the effect of thermal fluctuation, the magnetic moment is randomly oriented in the easy axis direction. The non-volatile devices are formed into an array, the magnetic moments of all non-volatile devices are randomly distributed after a write operation. The read state can be used as a random code to implement the reconfigurable PUF. The PUF has a simple structure and guarantees security. The random code in the disclosure may be two-state or multi-state, which is related to the number of magnetic domains of the ferromagnetic layer. A large number of challenge response pairs form a strong PUF.

A semiconductor memory device includes a plurality of semiconductor patterns extending in a first horizontal direction and separated from each other in a second horizontal direction and a vertical direction, each semiconductor pattern including a first source/drain area, a channel area, and a second source/drain area arranged in the first horizontal direction; a plurality of gate insulating layers covering upper surfaces or side surfaces of the channel areas; a plurality of word lines on the upper surfaces or the side surfaces of the channel areas; and a plurality of resistive switch units respectively connected to first sidewalls of the semiconductor patterns, extending in the first horizontal direction, and separated from each other in the second horizontal direction and the vertical direction, each resistive switch unit including a first electrode, a second electrode, and a resistive switch material layer between the first and second electrodes and including carbon nanotubes.

An electronic switching element is described having, in sequence, a first electrode, a molecular layer bonded to a substrate, and a second electrode. The molecular layer contains compounds of formula I, R.sup.1-(A.sup.1-Z.sup.1).sub.r—B.sup.1—(Z.sup.2-A.sup.2).sub.s-Sp-G, wherein A.sup.1, A.sup.2, B.sup.1, Z.sup.1, Z.sup.2, Sp, G, r, and s are as defined herein, in which a mesogenic radical is bonded to the substrate via a spacer group, Sp, by means of an anchor group, G. The switching element is suitable for production of components that can operate as a memristive device for digital information storage.

A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.

A method of fabricating a neuromorphic device includes forming a variable-resistance layer between a first terminal and a second terminal, the variable-resistance layer varies in resistance based on an oxygen concentration in the variable-resistance layer. The method further includes forming an electrolyte layer over the variable-resistance layer that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. The method further includes forming a gate layer over the electrolyte layer to apply a voltage on the electrolyte layer and the variable-resistance layer, the gate layer formed using an oxygen scavenging material.