To prevent attenuation and modulation of light received or projected through a display surface.

An image display device includes a plurality of pixels arranged two-dimensionally. A pixel in a first pixel region including some pixels among the plurality of pixels includes a first light emitting region, a second light emitting region having a higher visible light transmittance than the first light emitting region, a first self-light emitting element that emits light from the first light emitting region, and a second self-light emitting element that emits light from the second light emitting region, and a pixel in a second pixel region other than the first pixel region among the plurality of pixels includes a third light emitting region having a lower visible light transmittance than the second light emitting region, and a third self-light emitting element that emits light from the third light emitting region.

Disclosed herein are charge or electricity generating devices and methods of making and use thereof.

Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC.sub.71BM/MoO.sub.3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.

A photo detector is provided with a metal, a semiconductor, a first electrode, and a second electrode. In addition, a pre-treatment and/or a post-treatment is performed to the photo detector to reduce its noise and hence improves the signal-to-noise ratio (SNR). The provided photo detector can quickly respond to short mid-infrared light and generate low noise and high SNR currents.

A method for manufacturing a semiconductor device having an organic semiconductor material is provided. The method includes performing a large-area solution shearing step to form a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals with low shearing speed and forming Au electrodes by thermal evaporation on a wafer. The large-area solution shearing step is performed at a temperature in a range between about 60° C. and about 65° C. and with a shearing speed in a range between about 2 μm/sand about 3 μm/s. The 1L or 2L crystals have single-crystalline domains extending over several millimeters. An organic field-effect transistor (OFET) comprising an active layer that comprises a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals formed according to the method is also provided.

An OLED comprises a first electrode, an emissive layer positioned over the first electrode, a charge transport layer positioned over the emissive layer, and a second electrode positioned over the charge transport layer, wherein the charge transport layer is in direct contact with the second electrode, and wherein the charge transport layer has an index of refraction of at least 1.7. An OLED comprises a cavity formed between first and second metal electrodes, an organic light emitting element positioned within the cavity, and an efficiency enhancement layer positioned between the organic light emitting element and the second silver electrode, the efficiency enhancement layer having a refractive index of at least 1.7.

According to one embodiment, a manufacturing method of a display device includes preparing a processing substrate, forming an organic layer, and forming an etching stopper layer on the organic layer. The forming the etching stopper layer includes carrying the processing substrate into a chamber, inside the chamber, emitting a material for forming the etching stopper layer from an evaporation source which inclines with respect to a normal of the processing substrate, and conveying the processing substrate while rotating the processing substrate in a plane orthogonal to the normal, and depositing the material emitted from the evaporation source on the processing substrate.

A light-emitting device (10) includes a substrate (100), a first electrode (110), an organic layer (120), a plurality of first metal-containing layers (132), a metal compound-containing layer (134), and a second metal-containing layer (136). The first electrode (110) is located over the substrate (100), and has a light transmitting property. The organic layer (120) is located over the first electrode (110). The plurality of first metal-containing layers (132) are located over the organic layer (120), and has a light shielding property. The metal compound-containing layer (134) covers the plurality of first metal-containing layers (132), and has a light transmitting property. The second metal-containing layer (136) covers the metal compound-containing layer (134), and has a light transmitting property.

A light-emitting display device is provided. In the light-emitting display device, an insulation stack is patterned to form an opening area in the insulation stack, and an overhang structure in the opening area. An auxiliary electrode is connected to a common electrode around the overhang structure, such that a voltage of the common electrode may be uniformed for each region, and a voltage drop may be prevented. And, an exposed sidewall of the insulation stack surrounding the opening area is covered with the protective electrode, such that exposure of the insulation stack may be prevented at the inside and the sidewall of the opening area and residue of the pixel electrode material may be prevented. In addition, an exposure of a non-uniform interface of the insulating stack is prevented during a process of forming the organic functional layer and the common electrode, so that the organic functional layer and the common electrode may be stably deposited and the coverage characteristics of the encapsulation layer after forming the light-emitting device may be improved.

The present invention relates to an organic solar cell for a current-voltage test and a preparation method thereof. The disclosed organic solar cell for the current-voltage test comprises a substrate with a preset ITO pattern, wherein ITO on the substrate with the preset ITO pattern is used as the anode layer, and a hole transport layer, an active layer, an electron transport layer and a cathode layer are stacked successively to form a solar cell. A plurality of cell positions are designed on the substrate in the present invention. Each cell has an independent cathode test site and an anode test site. The distance between the test site of each cell and the cell is kept the same and the distance is short enough; and the cells are distributed evenly on the substrate discretely. The present invention has high substrate utilization rate, high data accuracy and good parallelism.