To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

The present invention relates to a working electrode (1a) for a photovoltaic device, comprising a light absorbing layer (3) and a conductive layer (6) arranged in electrical contact with the light absorbing layer (3), and the light absorbing layer (3) comprises a light absorbing photovoltaic material consisting of a plurality of dye molecules. The light absorbing layer (3) is formed by a layer of a plurality of clusters (7), whereby each cluster (7) is formed by dye molecules and each dye molecule in the cluster (7) is bonded to its adjacent dye molecules.

Described herein is a liquid electrophotographic photovoltaic ink composition comprising: a dispersion of a material with a perovskite structure, a thermoplastic resin and conductive particles in a carrier liquid; wherein the material with a perovskite structure has a chemical formula selected from ABX.sub.3 and A.sub.2BX.sub.6; wherein A is a cation, B is a cation and X is an anion; and wherein the thermoplastic resin comprises: a copolymer of an alkylene monomer and a monomer having acidic side groups; and/or a copolymer of an alkylene monomer and an ethylenically unsaturated monomer comprising an epoxide; and/or a copolymer of an alkylene monomer, an ethylenically unsaturated monomer comprising an epoxide, and a monomer selected from a monomer having acidic side groups, a monomer having ester side groups and a mixture thereof. Also described is a method of producing a photovoltaic cell using the LEP ink and the printed cell produced by the method.

A monolithic solar cell includes a first solar cell that is a sequential stack of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that includes a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the a p-type hole selective layer contacting and being integrated onto the interfacial layer of the first solar cell in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer.

Disclosed are a zinc oxide-polycyclic aromatic hydrocarbon quantum dot capable of blue light emission in which ZnO is combined with a polycyclic aromatic hydrocarbon having a blue light emitting characteristic to realize a quantum dot of a core-shell structure and electron emission transition is induced to proceed within the polycyclic aromatic hydrocarbon so that the purity of blue light emission is improved, and a manufacturing method thereof. The zinc oxide-polycyclic aromatic hydrocarbon quantum dot capable of blue light emission includes a core-shell structure of zinc oxide-polycyclic aromatic hydrocarbon (ZnO-PAH) quantum dot in which the ZnO quantum dot and the PAH are combined, the ZnO-PAH quantum dot includes an energy level in a form of a Type II structure or a quasi-Type II structure.

The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.

A zinc oxide (ZnO) nanomaterial includes a ZnO nanoparticle and a surface ligand. The surface ligand bonded to the ZnO nanoparticle has a structure of

##STR00001##

R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are independently selected from at least one of hydrogen, alkoxy group with a carbon number of one to three, or amino group. R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 include one to three alkoxy groups with a carbon number of one to three and zero to one amino group.

Provided are methods, systems, and apparatuses providing flexible conductive substrates for nanomaterial/perovskite-based optoelectronic devices. One such apparatus may include a flexible conductive substrate, a nanomaterial layer disposed on the flexible conductive substrate, and a perovskite layer disposed on the nanomaterial layer. The flexible conductive substrate may be a cost-effective metal sheet such as a stainless steel sheet or an aluminum sheet. The nanomaterial layer may comprise semiconductor or oxide nanorods, nanowires, nanotubes, or nanoparticles, such as gadolinium-doped zinc oxide nanorods. The perovskite layer may comprise inorganic or organic perovskite. The apparatus may further include an optically transparent conductive layer disposed on the perovskite layer. Optionally, the apparatus may include an electrical contact disposed on a portion of the optically transparent conductive layer.

A photo-sensitive device comprises: an active layer configured to generate charges in response to incident light; a charge transport layer arranged below the active layer, wherein the charge transport layer comprises a first portion and a second portion being laterally displaced in relation to the first portion; a gate separated by a dielectric material from the charge transport layer, wherein said gate is arranged below the first portion and configured to control a potential thereof; and a transfer gate, which is separated by a dielectric material from a transfer portion of the charge transport layer between the first portion and the second portion, wherein the transfer gate is configured to control transfer of accumulated charges in the first portion to the second portion for read-out of detected light.

Method of making an array of interconnected solar cells, including a) providing a continuous layer stack (1) of a prescribed thickness on a substrate (8), the layer stack (1) including an upper (2) and a lower (3) conductive layer having a photoactive layer (4) and a semiconducting electron transport layer (6) interposed there between; b) selectively removing the upper conductive layer (2) and the photoactive layer (4) for obtaining a contact hole (10) exposing the semiconducting electron transport layer (6); c) selectively heating the layer stack (1) to a first depth (d1) for obtaining a first heat affected zone (12) at a first centre-to-centre distance (s1) from the contact hole (10), the first heat affected zone (12) being transformed into a substantially insulating region with substantially the first depth (d1) in the layer stack, thereby locally providing an increased electrical resistivity to the layer stack (1).