A coated conductor comprises a substrate supporting a ReBCO superconductor adapted to carry current in a superconducting state. The superconductor is characterized in having peaks in critical current (J.sub.c) of at least 0.2 MA/cm.sup.2 in a magnetic field of about 1 Tesla when the field is applied normal to the surface of the superconductor and when the field is applied parallel to the surface of the superconductor, and further characterized in that the superconductor includes horizontal defects and columnar detects in a size and an amount sufficient to result in the said critical current response. The conductor is characterized in that the ratio of the height of the peaks in the J.sub.c is in the range from 3:1 with the ratio of the field perpendicular (0 degrees) to the field parallel (+/−90 degrees) to the range from 3:1 with the ratio of the field parallel to the field perpendicular.

The present disclosure further relates to nanostructures, in particular hybrid nanostructures with patterned growth of various layers for use in nanoscale electronic devices, such as hybrid semiconductor nanostructures with patterned growth and/or deposition of superconducting material for use in quantum devices. The presently disclosed method can be utilized for in-situ manufacturing of nanoscale electronic devices that have not been contaminated by ex-situ processes. One embodiment relates to a method for manufacturing a substrate for growth of crystalline nanostructures, the method comprising the steps of: depositing one or more layers of a crystal growth compatible dielectric material, such as silicon oxide, in a predefined pattern on the surface of a crystal growth compatible substrate to create a predefined etch pattern of said crystal growth compatible material, and selectively etching the substrate surface around said etch pattern to provide at least one under-etched platform which is vertically raised from the etched substrate surface.

An oxide superconducting thin film material includes: a metal substrate having a surface with a biaxially oriented crystal orientation structure; an intermediate layer biaxially oriented and formed on the metal substrate; and an oxide superconducting thin film formed on the intermediate layer and composed of a RE123-based oxide superconductor represented by REBa.sub.2Cu.sub.3O.sub.y. The oxide superconducting thin film includes Br (bromine).

A process for producing a cube textured foil is described. The process includes providing a cube textured metal foil M. The process further includes electroplating an epitaxial layer of an alloy on the foil M, whereby the epitaxial layer substantially replicates the cube texture of the metal foil M. The process further includes electroplating a non-epitaxial layer of an alloy on the epitaxial layer. The process further includes separating the electroplated alloy from the cube textured metal foil M to obtain an electro-formed alloy with one cube textured surface.

An oxide superconducting thin film material includes: a metal substrate having a surface with a biaxially oriented crystal orientation structure; an intermediate layer biaxially oriented and formed on the metal substrate; and an oxide superconducting thin film formed on the intermediate layer and composed of a RE123-based oxide superconductor represented by REBa.sub.2Cu.sub.3O.sub.y. The oxide superconducting thin film includes Br (bromine).

A coated conductor comprises a substrate supporting a ReBCO superconductor adapted to carry current in a superconducting state. The superconductor is characterized in having peaks in critical current (J.sub.c) of at least 0.2 MA/cm.sup.2 in a magnetic field of about 1 Tesla when the field is applied normal to the surface of the superconductor and when the field is applied parallel to the surface of the superconductor, and further characterized in that the superconductor includes horizontal defects and columnar detects in a size and an amount sufficient to result in the said critical current response. The conductor is characterized in that the ratio of the height of the peaks in the J.sub.c is in the range from 3:1 with the ratio of the field perpendicular (0 degrees) to the field parallel (+/90 degrees) to the range from 3:1 with the ratio of the field parallel to the field perpendicular.

A superconducting lead is presented for conducting electrical current to a superconducting device. the superconducting lead comprises first and second sections arranged one after the other along the lead, such that when the lead is brought to the superconducting device, the first and second sections are respectively proximal and distal sections with respect to the superconducting device, the proximal and distal sections being configured such that they differ from one another in at least one of heat conductance and working current.

An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer. The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

A substrate structure is provided for use in a superconductive device. The substrate structure has at least one of its two opposite surfaces configured for carrying at least one superconductive structure thereon. The substrate structure comprises a substrate made of a dielectric material composition and having a tape-like shape of a predetermined geometry characterized by a width-thickness aspect ratio of at least 10 and global planarity of said at least one surface defined by a surface roughness on a nanometric scale substantially not exceeding 1 nm rms.

A process for producing a cube textured foil is described. The process includes providing a cube textured metal foil M. The process further includes electroplating an epitaxial layer of an alloy on the foil M, whereby the epitaxial layer substantially replicates the cube texture of the metal foil M. The process further includes electroplating a non-epitaxial layer of an alloy on the epitaxial layer. The process further includes separating the electroplated alloy from the cube textured metal foil M to obtain an electro-formed alloy with one cube textured surface.