H10N60/855

Preparation method and device of inductance element, inductance element, and superconducting circuit

A method and a device for preparing an inductance element, an inductance element, and a superconducting circuit are provided. The method includes acquiring a compound for preparing an inductance element, a superconducting coherence length and a magnetic field penetration depth of the compound meeting a preset condition; and annealing the compound to cause decomposition between a non-superconductor phase and a superconductor phase in the compound to generate the inductance element, the kinetic inductance of the inductance element being greater than the geometric inductance of the inductance element.

Superconducting bilayers of two-dimensional materials with integrated Josephson junctions

Josephson junctions (JJ) based on bilayers of azimuthally misaligned two-dimensional materials having superconducting states are provided. Also provided are electronic devices and circuits incorporating the JJs as active components and methods of using the electronic devices and circuits. The JJs are formed from bilayers composed of azimuthally misaligned two-dimensional materials having a first superconducting segment and a second superconducting segment separated by a weak-link region that is integrated into the bilayer.

QUANTUM COMPUTING DEVICE

Provided is a quantum computing device comprising a carbon nanotube, a superconducting substrate in quantum proximity to the nanotube and being in a superconducting state having a pairing correlation matrix with a substantial spin-triplet component in a direction perpendicular to the nanotube, and a magnet arranged to provide a longitudinal magnetic field along a longitudinal axis of the nanotube. Further provided is a quantum computing device comprising at least three substrates made of a superconductor material and each in a superconducting state, and a non-superconducting structure made of a material in which the electrons' closed trajectories experience strong spin-orbit coupling interactions and being in quantum proximity to the substrates. The sum of the phase differences between the order parameters of all of the substrates is at least π.

Detection scheme
11615335 · 2023-03-28 · ·

The present subject matter provides technical solutions for the technical problems facing quantum computing by improving the accuracy and precision of qubit readout. Technical solutions described herein improves the readout fidelity by reducing the ambiguity between the bright and dark states. In an embodiment, this includes transferring the qubit population that is in the dark quantum state to an auxiliary third state. The auxiliary third state remains dark and reduces the mixing between the logical bright and dark states. This process uses multiple laser pulses to ensure high fidelity population transfer, thus preserving the dark nature of the dark state. Improving readout fidelity of 171Yb+ qubits may improve fidelity by an order of magnitude, such as by improving readout fidelity from 99.9% to 99.99%. This improvement in detection fidelity may substantially increase the computational power of a quantum computer.

Composite superconducting materials and processes for the production thereof
11469362 · 2022-10-11 · ·

Superconductors and processes that form superconductors as composites of electrically polarizable ferroelectric materials and electrically conductive materials. The materials are chosen such that the binding energy of charge carriers within the materials exceeds the repulsive energy of the carriers and the energy carried by thermal vibrations (phonons) within the materials.

Reducing parasitic capacitance and coupling to inductive coupler modes
11690301 · 2023-06-27 · ·

A qubit coupling device includes: a dielectric substrate including a trench; a first superconductor layer on a surface of the dielectric substrate where an edge of the first superconductor layer extends along a first direction and at least a portion of the superconductor layer is in contact with the surface of the dielectric substrate, and where the superconductor layer is formed from a superconductor material exhibiting superconductor properties at or below a corresponding critical temperature; a length of the trench within the dielectric substrate is adjacent to and extends along an edge of the first superconductor layer in the first direction, and where the electric permittivity of the trench is less than the electric permittivity of the dielectric substrate.

Method and Apparatus for Deposition of Multilayer Device with Superconductive Film

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

Superconducting structure and device surface termination with alloy

A method of fabricating a superconductor device includes providing a first metal layer on top of the substrate. An oxidation of a top surface of the first metal layer is rejected. A second metal layer is deposited on top of the second metal layer. A superconducting alloy of the first metal layer and the second metal layer is created between the first metal layer and the second metal layer. There is no oxide layer between the superconducting alloy and the first metal layer.

Reducing parasitic capacitance in a qubit system
11672188 · 2023-06-06 · ·

A system that includes: an array of qubits, each qubit of the array of qubits comprising a first electrode corresponding to a first node and a second electrode corresponding to a second node, wherein, for a first qubit in the array of qubits, the first qubit is positioned relative to a second qubit in the array of qubits such that a charge present on the first qubit induces a same charge on each of the first node of the second qubit and the second node of the second qubit, such that coupling between the first qubit and the second qubit is reduced, and wherein none of the nodes share a common ground is disclosed.

Tunable Josephson junction oscillator
11430937 · 2022-08-30 · ·

A tunable oscillator including a Josephson junction. In some embodiments, the tunable oscillator includes a first superconducting terminal, a second superconducting terminal, a graphene channel including a portion of a graphene sheet, and a conductive gate. The first superconducting terminal, the second superconducting terminal, and the graphene channel together may form a Josephson junction having an oscillation frequency, and the conductive gate may be configured, upon application of a voltage across the conductive gate and the graphene channel, to modify the oscillation frequency.