Embodiments of the invention determine intrinsic parameters of stacked nanowires/nanosheets GAA MOSFETs comprising N.sub.w nanowires and/or nanosheets, each nanowire/nanosheet being surrounded in an oxide layer, the oxide layers being embedded in a common gate, wherein the method comprises the following steps: measuring the following parameters of the MOSFET: number of stacked nanowires/nanosheets N.sub.W, width W.sub.W,i, of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.W, thickness of the nanowire/nanosheet H.sub.W,i, number i, i being an integer from 1 to N.sub.W, corner radius R.sub.W,i of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.W, R.sub.W,i; calculating, using a processor and the measured parameters, a surface potential x normalized by a thermal voltage .sub.T given by .sub.T=k.sub.BT/q; measuring the total gate capacitance for a plurality of gate voltages; determining, using the measured total gate capacitance and the calculated normalized surface potential, the intrinsic parameter of the stacked nanowires/nanosheets MOSFET.

This application discloses a method for developing a conductive nano-gap. The first step can comprise depositing a brittle material on a substrate. Next, a conductive graphene layer can be deposited at the surface of the brittle material. Lastly, a crack can be propagated through the brittle material and the graphene using a force, the crack a nano-gap.

A method of forming nanolenses for imaging includes providing an optically transparent substrate having a plurality of particles disposed on one side thereof. The optically transparent substrate is located within a chamber containing therein a reservoir holding a liquid solution. The liquid solution is heated to form a vapor within the chamber, wherein the vapor condenses on the substrate to form nanolenses around the plurality of particles. The particles are then imaged using an imaging device. The imaging device may be located in the same device that contains the reservoir or a separate imaging device.

A method for characterizing carbon nanotubes comprising: providing a conductive substrate and applying an insulating layer on the conductive substrate; forming a carbon nanotube structure on a surface of the insulating layer, the carbon nanotube structure includes at least one carbon nanotube; placing the carbon nanotube structure under a scanning electron microscope, adjusting the scanning electron microscope with an accelerating voltage ranging from 520 KV, a dwelling time ranging 620 microseconds and a magnification ranging from 10000100000 times; taking photos of the carbon nanotube structure with the scanning electron microscope; and, obtaining a photo of the carbon nanotube structure, the photo shows the at least one carbon nanotube and a background.

Embodiments of the invention determine intrinsic parameters of stacked nanowires/nanosheets GAA MOSFETs comprising N.sub.w nanowires and/or nanosheets, each nanowire/nanosheet being surrounded in an oxide layer, the oxide layers being embedded in a common gate, wherein the method comprises the following steps: measuring the following parameters of the MOSFET: number of stacked nanowires/nanosheets N.sub.w, width W.sub.w,i, of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.w, thickness of the nanowire/nanosheet H.sub.w,i, number i, i being an integer from 1 to N.sub.w, corner radius R.sub.w,i of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.w, R.sub.w,i; calculating, using a processor and the measured parameters, a surface potential x normalized by a thermal voltage .sub.T given by .sub.T=k.sub.BT/q; measuring the total gate capacitance for a plurality of gate voltages; determining, using the measured total gate capacitance and the calculated normalized surface potential, the intrinsic parameter of the stacked nanowires/nanosheets MOSFET.

A method for characterizing carbon nanotubes comprising: providing a conductive substrate and applying an insulating layer on the conductive substrate; forming a carbon nanotube structure on a surface of the insulating layer, the carbon nanotube structure includes at least one carbon nanotube; placing the carbon nanotube structure under a scanning electron microscope, adjusting the scanning electron microscope with an accelerating voltage ranging from 520 KV, a dwelling time ranging 620 microseconds and a magnification ranging from 10000100000 times; taking photos of the carbon nanotube structure with the scanning electron microscope; and, obtaining a photo of the carbon nanotube structure, the photo shows the at least one carbon nanotube and a background.

This application discloses a method for developing a conductive nano-gap. The first step can comprise depositing a brittle material on a substrate. Next, a conductive graphene layer can be deposited at the surface of the brittle material. Lastly, a crack can be propagated through the brittle material and the graphene using a force, the crack a nano-gap.

A vapor-condensation-assisted optical microscopy system comprises a vapor-condensation-assisted device and an optical microscope. The vapor-condensation-assisted device comprises air blowing device, a vapor producing device and a guide pipe. The vapor producing device connects the air blowing device with the guide pipe. The optical microscope comprises an observing device, an image processing device, a support frame and a stage. The stage, the guide pipe of the vapor-condensation-assisted device, the observing device, and the image processing device are fixed on the support frame. The vapor-condensation-assisted device is configured to provide a vapor to sample on the stage in application.