SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Abstract

A semiconductor device includes a gate structure on a substrate, a contact etch stop layer (CESL) on the gate structure, an interlayer dielectric (ILD) layer on the CESL, a first contact plug in the ILD layer and adjacent to the gate structure, a first stop layer on the ILD layer, an inter-metal dielectric (IMD) layer on the first stop layer, a first metal interconnection in the IMD layer, and an air gap around the gate structure and exposing the CESL and the first metal interconnection.

Claims

1. A semiconductor device, comprising: a gate structure on a substrate; a contact etch stop layer (CESL) on the gate structure; an interlayer dielectric (ILD) layer on the CESL; a first contact plug in the ILD layer and adjacent to the gate structure; a first stop layer on the ILD layer; a first inter-metal dielectric (IMD) layer on the first stop layer; a first metal interconnection in the first IMD layer; and an air gap around the gate structure and exposing the CESL and the first metal interconnection.

2. The semiconductor device of claim 1, further comprising: a spacer adjacent to the gate structure; a source/drain region adjacent to the spacer; the first contact plug adjacent to one side of the gate structure; a second contact plug adjacent to another side of the gate structure; the first metal interconnection on the first contact plug; and a second metal interconnection on the second contact plug.

3. The semiconductor device of claim 1, wherein the air gap exposes the first contact plug.

4. The semiconductor device of claim 1, further comprising: a second stop layer on the first IMD layer and the first metal interconnection; and a second IMD layer on the second stop layer.

5. The semiconductor device of claim 4, wherein the air gap comprises: a bottom portion exposing the CESL; and a top portion exposing the first metal interconnection, the second stop layer, and the second IMD layer.

6. The semiconductor device of claim 4, wherein a thickness of the first stop layer is less than a thickness of the second stop layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] FIGS. 1-4 illustrate a method for fabricating semiconductor device according to an embodiment of the present invention.

[0011] FIG. 4A illustrates a structural view of a semiconductor device according to an embodiment of the present invention.

[0012] FIGS. 5-7 illustrate a method for fabricating semiconductor device according to an embodiment of the present invention.

DETAILED DESCRIPTION

[0013] Referring to FIGS. 1-4, FIGS. 1-4 illustrate a method for fabricating semiconductor device according to an embodiment of the present invention. As shown in FIG. 1, a substrate 12 is first provided, in which the substrate could be a silicon substrate or silicon-on-insulator (SOI) substrate. A transistor region, such as a PMOS region or a NMOS region could be defined on the substrate 12 and one or more shallow trench isolation (STI) made of silicon oxide could be formed in the substrate 12 for electrical isolation. It should be noted that even though the present invention pertains to a method for fabricating planar field effect transistor (FET), according to other embodiment of the present invention, the following process could also be employed for fabricating non-planar devices such as fin field effect transistor (FinFET) device. In this instance, the substrate 12 shown in FIG. 1 would then be fin-shaped structures disposed on the substrate 12.

[0014] According to an embodiment of the present invention, the fin-shaped structures could be obtained by a sidewall image transfer (SIT) process. For instance, a layout pattern is first input into a computer system and is modified through suitable calculation. The modified layout is then defined in a mask and further transferred to a layer of sacrificial layer on a substrate through a photolithographic and an etching process. In this way, several sacrificial layers distributed with a same spacing and of a same width are formed on a substrate. Each of the sacrificial layers may be stripe-shaped. Subsequently, a deposition process and an etching process are carried out such that spacers are formed on the sidewalls of the patterned sacrificial layers. In a next step, sacrificial layers can be removed completely by performing an etching process. Through the etching process, the pattern defined by the spacers can be transferred into the substrate underneath, and through additional fin cut processes, desirable pattern structures, such as stripe patterned fin-shaped structures could be obtained.

[0015] Alternatively, the fin-shaped structures could also be obtained by first forming a patterned mask (not shown) on the substrate, 12, and through an etching process, the pattern of the patterned mask is transferred to the substrate 12 to form the fin-shaped structure. Moreover, the formation of the fin-shaped structures could also be accomplished by first forming a patterned hard mask (not shown) on the substrate 12, and a semiconductor layer composed of silicon germanium is grown from the substrate 12 through exposed patterned hard mask via selective epitaxial growth process to form the corresponding fin-shaped structures. These approaches for forming fin-shaped structures are all within the scope of the present invention.

[0016] Next, at least a gate structures 14 or dummy gate is formed on the substrate 12. In this embodiment, the formation of the gate structure 14 could be accomplished by a gate first process, a high-k first approach from gate last process, or a high-k last approach from gate last process. Since this embodiment pertains to a high-k first approach, a gate dielectric layer 16 or interfacial layer, a gate material layer 18 made of polysilicon, and a selective hard mask 20 could be formed sequentially on the substrate 12, and a pattern transfer process is then conducted by using a patterned resist (not shown) as mask to remove part of the hard mask 20, part of the gate material layer 18, and part of the gate dielectric layer 16 through single or multiple etching processes. After stripping the patterned resist, a gate structure 14 made of a patterned gate dielectric layer 16, a patterned gate material layer 18, and a patterned hard mask 20 is formed on the substrate 12.

[0017] Next, at least a spacer 22 is formed on the sidewalls of the gate structure 14, a source/drain region 24 and/or epitaxial layer (not shown) is formed in the substrate 12 adjacent to two sides of the spacer 22, and a selective silicide layer (not shown) could be formed on the surface of the source/drain region 24. In this embodiment, the spacer 22 could be a single spacer or a composite spacer, such as a spacer including but not limited to for example an offset spacer and a main spacer. Preferably, the offset spacer and the main spacer could include same material or different material while both the offset spacer and the main spacer could be made of material including but not limited to for example SiO.sub.2, SiN, SiON, SiCN, or combination thereof. The source/drain region 24 could include n-type dopants or p-type dopants depending on the type of device being fabricated.

[0018] Next, a contact etch stop layer (CESL) 26 is formed on the substrate 12 surface and the gate structure 14, and an interlayer dielectric (ILD) layer 28 is formed on the CESL 26 afterwards. Next, a photo-etching process is conducted by using a patterned mask (not shown) as mask to remove part of the ILD layer 28 and part of the CESL 26 for forming contact holes (not shown) exposing the source/drain region 24. Next, conductive materials including a barrier layer 30 selected from the group consisting of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN) and a metal layer 32 selected from the group consisting of tungsten (W), copper (Cu), aluminum (Al), titanium aluminide (TiAl), and cobalt tungsten phosphide (CoWP) are deposited into the contact holes, and a planarizing process such as chemical mechanical polishing (CMP) is conducted to remove part of aforementioned barrier layer 30 and metal layer 32 for forming contact plugs 34 electrically connecting the source/drain region 24.

[0019] It should be noted that even though a gate structure made of polysilicon is disclosed in this embodiment, according to other embodiment of the present invention, it would also be desirable to conduct a replacement metal gate (RMG) process to transform the gate structure 14 into metal gate after forming the ILD layer 28 and before forming the conduct plugs 34. For instance, the RMG process could be accomplished by first performing a selective dry etching or wet etching process using etchants including but not limited to for example ammonium hydroxide (NH.sub.4OH) or tetramethylammonium hydroxide (TMAH) to remove the hard mask 20, the gate material layer 18, and even the gate dielectric layer 16 from gate structure 14 for forming a recess (not shown) in the ILD layer 28. Next, a selective interfacial layer or gate dielectric layer (not shown), a high-k dielectric layer, a work function metal layer, and a low resistance metal layer are formed in the recesses, and a planarizing process such as CMP is conducted to remove part of low resistance metal layer, part of work function metal layer, and part of high-k dielectric layer to form a metal gate. If a high-k last approach were conducted to transform the polysilicon gate structure into metal gate, the metal gate would include an interfacial layer or gate dielectric layer, a U-shape high-k dielectric layer, a U-shape work function metal layer, and a low resistance metal layer.

[0020] According to an embodiment of the present invention, the high-k dielectric layer is preferably selected from dielectric materials having dielectric constant (k value) larger than 4. For instance, the high-k dielectric layer may be selected from hafnium oxide (HfO.sub.2), hafnium silicon oxide (HfSiO.sub.4), hafnium silicon oxynitride (HfSiON), aluminum oxide (Al.sub.2O.sub.3), lanthanum oxide (La.sub.2O.sub.3), tantalum oxide (Ta.sub.2O.sub.5), yttrium oxide (Y.sub.2O.sub.3), zirconium oxide (ZrO.sub.2), strontium titanate oxide (SrTiO.sub.3), zirconium silicon oxide (ZrSiO.sub.4), hafnium zirconium oxide (HfZrO.sub.4), strontium bismuth tantalate (SrBi.sub.2Ta.sub.2O.sub.9, SBT), lead zirconate titanate (PbZr.sub.xTi.sub.1-xO.sub.3, PZT), barium strontium titanate (Ba.sub.xSr.sub.1-xTiO.sub.3, BST) or a combination thereof.

[0021] The work function metal layer is formed for tuning the work function of the metal gate in accordance with the conductivity of the device. For an NMOS transistor, the work function metal layer having a work function ranging between 3.9 eV and 4.3 eV may include titanium aluminide (TiAl), zirconium aluminide (ZrAl), tungsten aluminide (WAl), tantalum aluminide (TaAl), hafnium aluminide (HfAl), or titanium aluminum carbide (TiAlC), but it is not limited thereto. For a PMOS transistor, the work function metal layer having a work function ranging between 4.8 eV and 5.2 eV may include titanium nitride (TiN), tantalum nitride (TaN), tantalum carbide (TaC), but it is not limited thereto. An optional barrier layer (not shown) could be formed between the work function metal layer and the low resistance metal layer may include titanium (Ti), titanium nitride (TiN), tantalum (Ta) or tantalum nitride (TaN). Furthermore, the material of the low-resistance metal layer may include copper (Cu), aluminum (Al), titanium aluminum (TiAl), cobalt tungsten phosphide (CoWP) or any combination thereof. Since the transformation of dummy gates into metal gates through RMG process is well known to those skilled in the art, the details of which are not explained herein for the sake of brevity.

[0022] Next, at least a metal interconnect structure is formed on the ILD layer 28 to electrically connect the contact plugs 34, in which the metal interconnect structure includes a stop layer 36, an inter-metal dielectric (IMD) layer 38, and metal interconnections 40 embedded in the IMD layer 38. In this embodiment, each of the metal interconnections 40 from the metal interconnect structure preferably includes a trench conductor, in which each of the metal interconnections 40 from the metal interconnect structure could be embedded within the IMD layer 38 according to a single damascene process or dual damascene process. For instance, each of the metal interconnections 40 could further include a barrier layer 30 and a metal layer 32, in which the barrier layer 30 could be selected from the group consisting of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN) and the metal layer 32 could be selected from the group consisting of tungsten (W), copper (Cu), aluminum (Al), titanium aluminide (TiAl), and cobalt tungsten phosphide (CoWP). Since single damascene process and dual damascene process are well known to those skilled in the art, the details of which are not explained herein for the sake of brevity.

[0023] In this embodiment, the metal layers 32 are preferably made of copper, the IMD layer 38 is preferably made of silicon oxide such as tetraethyl orthosilicate (TEOS) or ultra low-k (ULK) dielectric layer, and the stop layer 36 is preferably made of nitrogen doped carbide (NDC), silicon nitride, silicon carbon nitride (SiCN), or combination thereof.

[0024] Next, a stop layer 42 and another hard mask 44 are formed on the IMD layer 38 and metal interconnection 40, a photo-etching process or more specifically an anisotropic etching such as dry etching process is conducted by first forming a patterned mask (not shown) such as patterned resist on the hard mask 44, and then a fluorine-containing gas is injected by using the patterned mask as mask to remove part of the hard mask 44, part of the stop layer 42, part of the IMD layer 38, and part of the stop layer 36 for forming an opening 46 exposing the top surface of the ILD layer 28 and sidewalls of the IMD layer 38. In this embodiment, the stop layer 42 and the stop layer 36 are preferably made of same material such as SiCN, the hard mask 44 is preferably made of metal nitride such as TiN, and the thickness of the stop layer 36 is less than the thickness of the stop layer 42 atop. According to an embodiment of the present invention, the thickness of the stop layer 36 is between 270-330 Angstroms or most preferably 300 Angstroms, the thickness of the stop layer 42 is between 480-600 Angstroms or most preferably 540 Angstroms, and the thickness of the hard mask 44 is between 270-330 Angstroms or most preferably 300 Angstroms.

[0025] Next, as shown in FIG. 2, another photo-etching process or more specifically an isotropic etching process such as wet etching process is conducted by using diluted hydrofluoric acid (dHF) to remove part of the ILD layer 28 for exposing the CESL 26 on top of the gate structure 14. Preferably, the etching process conducted at this stage removes all of the ILD layer 28 surrounding the gate structure 14 or more specifically all of the ILD layer 28 around the gate structure 14 and between the contact plugs 34 that are adjacent to two sides of the gate structure 14. This extends the opening 46 downward to form an air gap 48 surrounding the gate structure 14, in which the air gap 48 exposes the CESL 26 and sidewalls of the contact plugs 34 but does not expose any part of the gate structure 14 including the hard mask 20 and/or the spacer 22. It should also be noted that the etching process conducted during the formation of the air gap 48 preferably removes more of the stop layer 42 on the top and less of the stop layer 36 on the bottom so that the width of the opening 46 between the patterned stop layer 42 would become slightly bigger than the width of the opening 46 between the patterned stop layer 36 thereby forming an air gap 48 or opening 46 with wide top and narrow bottom. Moreover, the etchant used at this stage may also remove part of the sidewalls of the stop layer 36, the IMD layer 38, and the stop layer 42 to form curve sidewalls instead of linear or vertical sidewalls.

[0026] Next, as shown in FIG. 3, an etching or cleaning process is conducted without forming patterned mask to use a cleaning agent such as Standard Clean 1 (SC1) to completely remove the hard mask 44 and expose the stop layer 42.

[0027] Next, as shown in FIG. 4, another IMD layer 50 is formed on the stop layer 42 without filling the gap between the patterned stop layer 42 and IMD layer 38 to seal off the aforementioned opening 46 and air gap 48 for forming an air gap 52, in which a bottom portion 54 of the air gap 52 includes a substantially reverse U-shape while a top portion 56 of the air gap 52 includes a teardrop shape. Specifically, the bottom portion 54 of the air gap 52 exposes the CESL 26 and sidewalls of the contact plugs 34 while not exposing any part of the gate structure 14 including the hard mask 20 and/or the spacer 22. The top portion 56 of the air gap 52 on the other hand exposes sidewalls of the stop layer 36, sidewalls of the IMD layer 38, sidewalls of the stop layer 42, and bottom surface of the IMD layer 50. The bottom surface of the top portion 56 is preferably even with the bottom surface of the stop layer 36 and the top surface of the top portion 56 is slightly higher than the top surface of the stop layer 42. In this embodiment, the IMD layer 50 could include silicon oxide or ultra low-k (ULK) dielectric layer and the thickness of the IMD layer 50 could be between 3000-5000 Angstroms. This completes the fabrication of a semiconductor device according to an embodiment of the present invention.

[0028] It should be noted that the contact plugs 34 disclose in this embodiment pertains to be slot contacts instead of traditional pillar-shape contact structures. Preferably, the contact plugs 34 are dispose adjacent to two sides of the gate structure 14 as the contact plugs 34 and the gate structure 14 are both extending along the same direction on the substrate 12. Hence when the aforementioned etching process were conducted to remove the ILD layer 28 around the gate structure 14, only the ILD layer 28 directly contacting the inner sidewalls of the contact plugs 34 or the ILD layer 28 between the gate structure 14 and the contact plugs 34 would be removed while the ILD layer 28 directly contacting the outer sidewalls of the contact plugs 34 would remain as the contact plugs 34 act as a barrier. As shown in the cross-section view of FIG. 4, only the ILD layer 28 around the gate structure 14 and between the two contact plugs 34 is removed to form the air gap 52 while the ILD layer 28 adjacent to two sides of the contact plugs 34 including the ILD layer 28 on left side of the left contact plug 34 and the ILD layer 28 on right side of the right contact plug 34 are not removed.

[0029] Referring to FIG. 4A, FIG. 4A illustrates a structural view of a semiconductor device expanding upon the embodiment shown in FIG. 4 according to an embodiment of the present invention. As shown in FIG. 4A, instead of forming an air gap 52 with top portion 56 exposing sidewalls of the stop layer 36 and the IMD layer 38 as disclosed in the aforementioned embodiment, it would also be desirable to adjust the size of the air gap 52 or more specifically expand the width of the top portion 56 of the air gap 52 such that the top portion 56 of the air gap 52 exposes sidewalls of the metal interconnection 40.

[0030] Specifically, it would be desirable to first follow the fabrication steps disclosed in FIG. 1 by forming an opening 46 exposing the top surface of the ILD layer 28 and sidewalls of the IMD layer 38. Next, fabrication steps disclosed in FIG. 2 could be conducted by using another photo-etching process such as an isotropic etching process or wet etching process to remove all the ILD layer 28 around the gate structure 14 and between the contact plugs 34 as well as all the stop layer 36 and all the IMD layer 38 between the metal interconnections 40. This extends the opening 46 laterally between the metal interconnections 40 and downward to form an air gap 48 around the gate structure 14. After the hard mask 44 is removed to expose the stop layer 42 as disclosed in the step shown in FIG. 3, another IMD layer 50 is formed on the stop layer 42 to seal off the opening 46 and air gap 48 for forming an air gap 52.

[0031] Structurally, the air gap 52 also includes a bottom portion 54 and a top portion 56, in which the bottom portion 54 exposes the CESL 26 and sidewalls of the contact plugs 34 while not exposing any part of the gate structure 14. The top portion 56 of the air gap 52 on the other hand exposes or directly contacts sidewalls of the metal interconnections 40, sidewalls of the stop layer 42, and bottom surface of the IMD layer 50. The bottom surface of the top portion 56 although not clearly marked by a boundary line is preferably even with the bottom surface of the stop layer 36 and the top surface of the top portion 56 could be slightly higher than, even with, or slightly lower than the top surface of the stop layer 42.

[0032] Referring to FIGS. 5-7, FIGS. 5-7 illustrate a method for fabricating semiconductor device according to an embodiment of the present invention. As shown in FIG. 5, it would be desirable to follow the process conducted in FIG. 1 to first form elements including gate structures 14, spacers 22, source/drain regions 24, CESL 26, and ILD layer 28 on the substrate 12, form contact plugs 34 in the ILD layer 28, and then form a stop layer 36 on the ILD layer 28 to cover the contact plugs 34. Similar to the aforementioned embodiment, the stop layer 36 is preferably made of SiCN and the thickness of the stop layer 36 is between 270-330 Angstroms or most preferably 300 Angstroms.

[0033] Next, as shown in FIG. 6, a photo-etching process or more specifically a dry etching process is conducted by first forming a patterned mask (not shown) such as patterned resist on the stop layer 36 and then using the patterned mask as mask and fluorine-containing gas as etchant to remove part of the stop layer 36 for exposing the ILD layer 28. Next, another etching process such as a wet etching process is conducted by using the same patterned mask as mask and diluted hydrofluoric acid (dHF) as etchant to remove the ILD layer 28 and expose the CESL 26 on top of the gate structure 14.

[0034] Similar to the aforementioned embodiment, the etching process conducted at this stage preferably removes all of the ILD layer 28 around the gate structure 14 and between the two contact plugs 34 for forming an air gap 48 while the ILD layer 28 on left side of the left contact plug 34 and the ILD layer 28 on right side of the right contact plug 34 are not removed at all. Preferably, the air gap 48 exposes the CESL 26 and sidewalls of the contact plugs 34 but not exposing any element of the gate structure 14 including the hard mask 20, the gate material layer 18 or gate electrode, and the spacer 22.

[0035] Next, as shown in FIG. 7, an IMD layer 38 is formed on the stop layer 36 to seal off the air gap 48 formed previously, metal interconnections 40 are formed in the IMD layer 38, a stop layer 42 is formed on the IMD layer 38 and metal interconnections 40, and another IMD layer 50 is formed on the stop layer 42. Similar to the aforementioned embodiment, the stop layers 36 and 42 could be made of same material such as SiCN and the IMD layers 38 and 50 could be made of same or different material such as silicon oxide or ultra low-k (ULK) dielectric layer. This completes the fabrication of a semiconductor device according to an embodiment of the present invention.

[0036] Structurally, in contrast to the air gap 52 from the aforementioned embodiment including top and bottom portions, the air gap 48 in this embodiment only includes a reverse U-shape surrounding the gate structure 14 as the top surface of the air gap 48 is slightly higher than the top surface of the ILD layer 28 but lower than the bottom surface of the IMD layer 38. It should be noted that to prevent the IMD layer 38 being filled into the air gap 48 around the gate structure 14, the width of the opening gap of the patterned stop layer 36 between air gap 48 and the IMD layer 38 must be less than the gap or distance between the two contact plugs 34. For instance, the width of the gap opening of the patterned stop layer 36 could be less than , , or less of the distance between two contact plugs 34, less than the width of the gate structure 14, or even less than , , , or less of the width of the gate structure 14, which are all within the scope of the present invention.

[0037] Overall, the present invention first forms a stop layer and/or an IMD layer after forming an ILD layer on a gate structure, and then conduct one or more photo-etching process to remove the ILD layer in particular around the gate structure and between two adjacent contact plugs directly contacting the source/drain region for forming an air gap. By using this approach to extend the overall space of the air gap, the present invention is able to improve issues such as RC delay significantly.

[0038] Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.