The techniques described herein relate to methods for the synthesis of ammonia from nitrogen and hydrogen, the methods including use of plasma, such as a microjet plasma, in a first reaction chamber to generate a vibrationally exited nitrogen atom or nitrogen containing molecule, optionally wherein the excited nitrogen atom or molecule is reacted with hydrogen in an aqueous medium, optionally wherein the medium is then recycled to remove soluble products. A system for carrying out such methods is also provided.

A system and method are provided for the separation of hydrogen from natural gas feedstock to form hydrocarbon radicals. Aspects of the system include perpendicular magnetic and electric fields, a method of radical formation that separates hydrogen from the reaction process, and a separation method based on centrifugal forces and phase transitions. The gases rotate in the chamber due to the Lorentz force without any mechanical motion. Rotation separates gases and liquids by centrifugal force. The lighter species are collected from the mid region endpoint of the apparatus and fed back for further reaction. A new concept of controlled turbulence is introduced to mix various species. A novel magnetic field device is introduced comprised of two specially magnetized cylinders. A novel control of temperatures, pressures, electron densities and profiles by, RF, microwaves, UV and rotation frequency are possible especially when atomic, molecular, cyclotron resonances are taken into account. The electrodes can be coated with catalysts; the entire apparatus can be used as a new type of chemical reactor.

A system and method are provided for the separation of hydrogen from natural gas feedstock to form hydrocarbon radicals. Aspects of the system include perpendicular magnetic and electric fields, a method of radical formation that separates hydrogen from the reaction process, and a separation method based on centrifugal forces and phase transitions. The gases rotate in the chamber due to the Lorentz force without any mechanical motion. Rotation separates gases and liquids by centrifugal force. The lighter species are collected from the mid region endpoint of the apparatus and fed back for further reaction. A new concept of controlled turbulence is introduced to mix various species. A novel magnetic field device is introduced comprised of two specially magnetized cylinders. A novel control of temperatures, pressures, electron densities and profiles by, RF, microwaves, UV and rotation frequency are possible especially when atomic, molecular, cyclotron resonances are taken into account. The electrodes can be coated with catalysts; the entire apparatus can be used as a new type of chemical reactor.

A high-frequency wave applicator for producing a plasma, including an inner conductor, and an outer conductor forming a coaxial structure, and a propagation medium of a high-frequency wave in a main propagation direction (x), including a passage dielectric of the wave having a sealing solid body disposed between the inner conductor and the outer conductor. Advantageously, the inner conductor has a first outer dimension d.sub.1 in a transverse direction (y), perpendicular to the main propagation direction (x), and the outer conductor has an inner dimension d.sub.2 in the transverse direction (y), such that 0.2<(d.sub.2−d.sub.1)/d.sub.2<0.55 allows improvement of the dissipation of the energy flows on the surface of the applicator.

A high-frequency wave applicator for producing a plasma, including an inner conductor, and an outer conductor forming a coaxial structure, and a propagation medium of a high-frequency wave in a main propagation direction (x), including a passage dielectric of the wave having a sealing solid body disposed between the inner conductor and the outer conductor. Advantageously, the inner conductor has a first outer dimension d.sub.1 in a transverse direction (y), perpendicular to the main propagation direction (x), and the outer conductor has an inner dimension d.sub.2 in the transverse direction (y), such that 0.2<(d.sub.2−d.sub.1)/d.sub.2<0.55 allows improvement of the dissipation of the energy flows on the surface of the applicator.

A high-frequency power supply device is provided with an AC-DC converter for converting an input from a three-phase alternating-current source into a direct current and a high-frequency amplifier including multiple FET elements and outputting a high-frequency alternating-current power, with the output of the AC-DC converter being directly input to the high-frequency amplifier, and further includes a phase conversion circuit for imparting phase differences to gate signals to be input to the multiple FET elements so as to offset fluctuation components included in the direct current. The device generates the high-frequency alternating-current power by converting the input from the three-phase alternating-current source into the direct current, directly inputting the direct current to the high-frequency amplifier, imparting the phase differences to the gate signals to be input to the multiple FET elements so as to offset the fluctuation components included in the direct current, and performing switching.

A high-frequency power supply device is provided with an AC-DC converter for converting an input from a three-phase alternating-current source into a direct current and a high-frequency amplifier including multiple FET elements and outputting a high-frequency alternating-current power, with the output of the AC-DC converter being directly input to the high-frequency amplifier, and further includes a phase conversion circuit for imparting phase differences to gate signals to be input to the multiple FET elements so as to offset fluctuation components included in the direct current. The device generates the high-frequency alternating-current power by converting the input from the three-phase alternating-current source into the direct current, directly inputting the direct current to the high-frequency amplifier, imparting the phase differences to the gate signals to be input to the multiple FET elements so as to offset the fluctuation components included in the direct current, and performing switching.

A substrate processing method includes: a step of preparing a substrate in a chamber of a substrate processing apparatus; a step of correcting a set power value based on a correction value Y from Equation (1), coefficients A, B, C, and D, and a variable X indicating a processed amount of the substrates having been subjected to continuous film formation processes, referring to a storage in which the coefficients A, B, C, and D of the Equation (1) used to calculate the correction value Y for the set power value are stored; and a step of processing the prepared substrate by applying power with the corrected power value into the chamber, the Equation (1) is expressed as Y=Aexp(BX)+CX+D, where at least one of the coefficients A, C, and D is not zero, and when the coefficient A is not zero, the coefficient B is also not zero.

According to the present invention, provided is an inductively coupled plasma reactor including: a reaction chamber configured to provide a plasma reaction space; a ferrite core arranged to surround the plasma reaction space; and an antenna coil formed by winding a strip-shaped wire structure on the ferrite core, wherein the wire structure includes a plurality of electrically conductive wires and a covering made of a flexible material and configured to surround the plurality of electrically conductive wires.

Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.