To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 μm in the planar direction and less than 5 μm in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.

An electronic component includes a glass base in which through holes are formed passing through both surfaces thereof; an insulating resin layer laminated on each of both surfaces of the glass base and including a copper plated layer formed therein; and a capacitor including a lower electrode formed on the copper plated layer, a dielectric layer laminated on the lower electrode, and an upper electrode laminated on the dielectric layer. In the electronic component, the upper electrode has a region that is parallel to the copper plated layer and is formed so as to be smaller than a region of the dielectric layer parallel to the surface of the copper plated layer or a region of the lower electrode parallel to the surface of the copper plated layer.

An electronic component includes a glass base in which through holes are formed passing through both surfaces thereof; an insulating resin layer laminated on each of both surfaces of the glass base and including a copper plated layer formed therein; and a capacitor including a lower electrode formed on the copper plated layer, a dielectric layer laminated on the lower electrode, and an upper electrode laminated on the dielectric layer. In the electronic component, the upper electrode has a region that is parallel to the copper plated layer and is formed so as to be smaller than a region of the dielectric layer parallel to the surface of the copper plated layer or a region of the lower electrode parallel to the surface of the copper plated layer.

Embodiments disclosed herein include an electronics package and methods of forming such electronics packages. In an embodiment, the electronics package comprises a plurality of build-up layers. In an embodiment, the build-up layers comprise conductive traces and vias. In an embodiment, the electronics package further comprises a capacitor embedded in the plurality of build-up layers. In an embodiment, the capacitor comprises: a first electrode, a high-k dielectric layer over portions of the first electrode, and a second electrode over portions of the high-k dielectric layer.

A temperature-dependent capacitor comprises a first conductive plate, a second conductive plate located in a parallel-planar orientation to the first conductive plate, and a dielectric material located between the first conductive plate and the second conductive plate, the dielectric material having a temperature-dependent dielectric constant (ε) value, wherein the temperature-dependent capacitor has a positive correlation of an operating temperature of the temperature-dependent capacitor to a capacitance value of the temperature-dependent capacitor.

A method for manufacturing a capacitive device comprising the following steps: a) providing a metallic layer, b) depositing a full-sheet aluminium layer, c) structuring pores in the aluminium layer by a full-sheet anodic etching process, subsequently to which a continuous porous alumina layer is obtained comprising a first main face and a second main face, longitudinal pores extending from the first main face to the second main face, d) forming a capacitive area at a first area of the porous alumina layer, e) forming an upper electrode over the capacitive area, f) forming a contact resumption at a second area of the porous alumina layer, g) forming a lower electrode over the contact resumption.

Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.

Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.

A capacitor according to one embodiment of the present invention relates to a thin film capacitor including a base member and a MIM structure provided on the base member. The thin film capacitor includes a first external electrode and a second external electrode that are electrically connected to the MIM structure. The base member has a plurality of through holes penetrating between a first surface and a second surface of the base member. The MIM structure includes a first portion extending along the first surface of the base member, a second portion extending along the second surface of the base member, and a third portion provided in the plurality of through holes of the base member so as to connect the first portion to the second portion.

A capacitor according to one embodiment of the present invention relates to a thin film capacitor including a base member and a MIM structure provided on the base member. The thin film capacitor includes a first external electrode and a second external electrode that are electrically connected to the MIM structure. The base member has a plurality of through holes penetrating between a first surface and a second surface of the base member. The MIM structure includes a first portion extending along the first surface of the base member, a second portion extending along the second surface of the base member, and a third portion provided in the plurality of through holes of the base member so as to connect the first portion to the second portion.