A ceramic electronic component wherein outer electrode is placed over both end portions of a ceramic body. A first coating mainly containing Ni and a second coating containing Sn, solder, or the like are placed on a surface of the outer electrode. The outer electrode includes an end-surface portion and a side-surface turnover portion. The outer electrode includes a glass layer which is placed in a region within at least 5 μm in linear distance L from a covering end portion of the side-surface turnover portion in a direction toward the end-surface portion so as to be in contact with the ceramic body and which contains, at least, Si. The average thickness t of the glass layer is 3 μm to 10 μm. The content of a Si component is 11% by weight or more (preferably 40% by weight or less).

The present disclosure discloses a film capacitor, including: a capacitor core; a positive electrode busbar; a negative electrode busbar, superposed with and insulated from the positive electrode busbar; a first electrode terminal, connected to the positive electrode busbar; a second electrode terminal, connected to the negative electrode busbar; a first connection sheet connected to the positive electrode busbar and provided with a first connection terminal connected to the capacitor core; and a second connection sheet, opposed to the first connection sheet, connected to the negative electrode busbar and provided with a second connection terminal connected to the capacitor core, wherein the capacitor core is disposed between the first connection sheet and the second connection sheet; the first connection sheet, the first connection terminal and the positive electrode busbar are integrally formed; and the second connection sheet, the second connection terminal and the negative electrode busbar are integrally formed.

Improved termination features for multilayer electronic components are disclosed. Monolithic components are provided with plated terminations whereby the need for typical thick-film termination stripes is eliminated or greatly simplified. Such termination technology eliminates many typical termination problems and enables a higher number of terminations with finer pitch, which may be especially beneficial on smaller electronic components. The subject plated terminations are guided and anchored by exposed internal electrode tabs and additional anchor tab portions which may optionally extend to the cover layers of a multilayer component. Such anchor tabs may be positioned internally or externally relative to a chip structure to nucleate additional metallized plating material. External anchor tabs positioned on top and bottom sides of a monolithic structure can facilitate the formation of wrap-around plated terminations.

Improved termination features for multilayer electronic components are disclosed. Monolithic components are provided with plated terminations whereby the need for typical thick-film termination stripes is eliminated or greatly simplified. Such termination technology eliminates many typical termination problems and enables a higher number of terminations with finer pitch, which may be especially beneficial on smaller electronic components. The subject plated terminations are guided and anchored by exposed internal electrode tabs and additional anchor tab portions which may optionally extend to the cover layers of a multilayer component. Such anchor tabs may be positioned internally or externally relative to a chip structure to nucleate additional metallized plating material. External anchor tabs positioned on top and bottom sides of a monolithic structure can facilitate the formation of wrap-around plated terminations.

A capacitor is provided having a plurality of first conductive columnar portions that each have a nanosized outer diameter. Moreover, each of a plurality of second conductive columnar portions also have a nanosized outer diameter. A conductive portion is disposed on a first dielectric layer and faces at least a part of each of the plurality of first conductive columnar portions with the first dielectric layer interposed therebetween. The conductive portion is also disposed on a second dielectric layer and faces at least a part of each of the plurality of second conductive columnar portions with the second dielectric layer interposed therebetween. A tip of each of the second conductive columnar portions is located closer to a first support portion than a tip of each of the first conductive columnar portions.

A semiconductor structure and a manufacturing method thereof are disclosed in embodiments of the present disclosure. The semiconductor structure includes: a substrate; a plurality of discrete bottom electrodes located on the substrate; and a first dielectric layer and a second dielectric layer; where the first dielectric layer and the second dielectric layer are located between the bottom electrodes; the second dielectric layer is located between the first dielectric layer and each of the bottom electrodes; and a thickness of an upper portion of the second dielectric layer is less than a thickness of the bottom of the second dielectric layer.

A semiconductor structure and a manufacturing method thereof are disclosed in embodiments of the present disclosure. The semiconductor structure includes: a substrate; a plurality of discrete bottom electrodes located on the substrate; and a first dielectric layer and a second dielectric layer; where the first dielectric layer and the second dielectric layer are located between the bottom electrodes; the second dielectric layer is located between the first dielectric layer and each of the bottom electrodes; and a thickness of an upper portion of the second dielectric layer is less than a thickness of the bottom of the second dielectric layer.

A multilayer capacitor includes a body including a dielectric layer and internal electrodes; and an external electrode disposed on the body to be connected to the internal electrode, wherein the dielectric layer includes a plurality of grains having a core-shell structure having a pore in a core, and the dielectric layer includes 20% to 40% of grains having two or less pores, among the plurality of grains.

A multilayer capacitor includes a body including a dielectric layer and internal electrodes; and an external electrode disposed on the body to be connected to the internal electrode, wherein the dielectric layer includes a plurality of grains having a core-shell structure having a pore in a core, and the dielectric layer includes 20% to 40% of grains having two or less pores, among the plurality of grains.

An electrode foil having high capacitance per unit volume is provided. The electrode foil is an electrode foil for an electrolytic capacitor. The electrode foil is an electrode foil extending in a longitudinal direction and having a width direction orthogonal to the longitudinal direction, the electrode foil including an enlarged surface portion on a surface of the electrode foil, wherein a crack is formed in the enlarged surface portion in a direction oblique to the width direction.