Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The lower electrode layer includes a first metal layer positioned on a side facing the dielectric layer and a second metal layer positioned on a side facing away from the dielectric layer. The first metal layer has a first surface positioned on a side facing the second metal layer and a second surface positioned on a side facing the dielectric layer. The first surface has a surface roughness higher than that of the second surface. The second metal layer reflects a surface property of the first surface.

Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The lower electrode layer includes a first metal layer positioned on a side facing the dielectric layer and a second metal layer positioned on a side facing away from the dielectric layer. The first metal layer has a first surface positioned on a side facing the second metal layer and a second surface positioned on a side facing the dielectric layer. The first surface has a surface roughness higher than that of the second surface. The second metal layer reflects a surface property of the first surface.

An electronic component includes: a conductive pattern provided on the main surface of a substrate and constituting a lower electrode; a dielectric film that covers top and side surfaces of the conductive pattern; and a conductive pattern stacked on the top surface of the conductive pattern through the dielectric film and constituting an upper electrode. A part of the dielectric film that is parallel to the main surface of the substrate is removed at least partly. Partially removing a part of the dielectric film that is parallel to the main surface of the substrate allows stress relaxation. This prevents peeling at the interface between the lower electrode and the dielectric film.

An electronic component includes: a conductive pattern provided on the main surface of a substrate and constituting a lower electrode; a dielectric film that covers top and side surfaces of the conductive pattern; and a conductive pattern stacked on the top surface of the conductive pattern through the dielectric film and constituting an upper electrode. A part of the dielectric film that is parallel to the main surface of the substrate is removed at least partly. Partially removing a part of the dielectric film that is parallel to the main surface of the substrate allows stress relaxation. This prevents peeling at the interface between the lower electrode and the dielectric film.

A memory cell includes a select device and a capacitor electrically coupled in series with the select device. The capacitor includes two conductive capacitor electrodes having ferroelectric material there-between. The capacitor has an intrinsic current leakage path from one of the capacitor electrodes to the other through the ferroelectric material. There is a parallel current leakage path from the one capacitor electrode to the other. The parallel current leakage path is circuit-parallel the intrinsic path and of lower total resistance than the intrinsic path. Other aspects are disclosed.

A memory cell includes a select device and a capacitor electrically coupled in series with the select device. The capacitor includes two conductive capacitor electrodes having ferroelectric material there-between. The capacitor has an intrinsic current leakage path from one of the capacitor electrodes to the other through the ferroelectric material. There is a parallel current leakage path from the one capacitor electrode to the other. The parallel current leakage path is circuit-parallel the intrinsic path and of lower total resistance than the intrinsic path. Other aspects are disclosed.

A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate having a first surface and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to the bottom electrode layer.

A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate having a first surface and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to the bottom electrode layer.

A semiconductor device includes a first conductive material, a dielectric structure extending over a top surface of the first conductive material, the dielectric material having a first portion with a first thickness, and a second portion with a second thickness, and a third portion with a third thickness between the first thickness and the second thickness; and a second conductive material extending over the first portion of the dielectric structure. An oxygen-enriched portion of the second conductive material extends along a top surface and a sidewall of the second conductive material. A bottom surface and an interior portion of the second conductive material have an oxygen concentration which is larger than an oxygen concentration of a bottom surface and an interior portion of the second conductive material.

A semiconductor device includes a first conductive material, a dielectric structure extending over a top surface of the first conductive material, the dielectric material having a first portion with a first thickness, and a second portion with a second thickness, and a third portion with a third thickness between the first thickness and the second thickness; and a second conductive material extending over the first portion of the dielectric structure. An oxygen-enriched portion of the second conductive material extends along a top surface and a sidewall of the second conductive material. A bottom surface and an interior portion of the second conductive material have an oxygen concentration which is larger than an oxygen concentration of a bottom surface and an interior portion of the second conductive material.