Disclosed herein is a dielectric composite comprising an organic polymer that has a glass transition temperature greater than or equal to about 250° C.; and a dielectric filler present in an amount effective to impart to the dielectric composite a dielectric constant that varies by less than 5% over a temperature range of 25 ° C. to 300° C., with an applied alternating electric field having a frequency of 10.sup.4 Hz and a maximum operating electric field strength of at least 250 megavolt per meter. Disclosed herein too is a method of manufacturing the dielectric composite and articles that contain the dielectric composite.

Disclosed herein is a dielectric composite comprising an organic polymer that has a glass transition temperature greater than or equal to about 250° C.; and a dielectric filler present in an amount effective to impart to the dielectric composite a dielectric constant that varies by less than 5% over a temperature range of 25 ° C. to 300° C., with an applied alternating electric field having a frequency of 10.sup.4 Hz and a maximum operating electric field strength of at least 250 megavolt per meter. Disclosed herein too is a method of manufacturing the dielectric composite and articles that contain the dielectric composite.

The present disclosure relates to semiconductor structures and, more particularly, to tight pitch wirings and capacitors and methods of manufacture. The structure includes: a capacitor including: a bottom plate of a first conductive material; an insulator material on the bottom plate; and a top plate of a second conductive material on the insulator material; and a plurality of wirings on a same level as the bottom plate and composed of the second conductive material.

The present disclosure relates to semiconductor structures and, more particularly, to tight pitch wirings and capacitors and methods of manufacture. The structure includes: a capacitor including: a bottom plate of a first conductive material; an insulator material on the bottom plate; and a top plate of a second conductive material on the insulator material; and a plurality of wirings on a same level as the bottom plate and composed of the second conductive material.

A multilayer electronic component includes a body comprising a capacitance-forming portion including a dielectric layer and a plurality of internal electrodes layered with the dielectric layer interposed therebetween, and upper and lower cover portions disposed on upper and lower surfaces of the capacitance-forming portion, respectively; and external electrodes disposed on the body and electrically connected to at least some of the plurality of internal electrodes, respectively, wherein at least one of the upper cover portion and or the lower cover portion has a step structure, and the step structure has a shorter length and width as compared to the capacitance-forming portion.

A multilayer electronic component includes a body comprising a capacitance-forming portion including a dielectric layer and a plurality of internal electrodes layered with the dielectric layer interposed therebetween, and upper and lower cover portions disposed on upper and lower surfaces of the capacitance-forming portion, respectively; and external electrodes disposed on the body and electrically connected to at least some of the plurality of internal electrodes, respectively, wherein at least one of the upper cover portion and or the lower cover portion has a step structure, and the step structure has a shorter length and width as compared to the capacitance-forming portion.

A capacitor includes an MIM capacitor that includes a lower electrode, a dielectric film disposed on the lower electrode, and an upper electrode disposed on the dielectric film, an insulating film that is disposed on the upper electrode so as to cover the MIM capacitor, and an additional electrode that is disposed in the insulating film and above an outer periphery of the upper electrode, has an outer periphery located outside the outer periphery of the upper electrode, and is connected to the upper electrode.

A capacitor includes an MIM capacitor that includes a lower electrode, a dielectric film disposed on the lower electrode, and an upper electrode disposed on the dielectric film, an insulating film that is disposed on the upper electrode so as to cover the MIM capacitor, and an additional electrode that is disposed in the insulating film and above an outer periphery of the upper electrode, has an outer periphery located outside the outer periphery of the upper electrode, and is connected to the upper electrode.

A capacitor according to an embodiment of the present disclosure is provided with a capacitor body in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately laminated. The dielectric layers each includes crystal particles, grain boundaries and metal particles. An average particle size of the metal particles is smaller than an average particle size of the crystal particles and larger than an average width of interfacial grain boundaries among the grain boundaries. Observation of the longitudinal cross section of the dielectric layer shows that the metal particles are distributed along the width direction and the thickness direction of the dielectric layer.

A power storage device, containing two electrodes, and a plate-like crystal structure smectite-based clay film between the electrodes.