Embodiments of the present invention provide a semiconductor device capable of improving current leakage property and a method for fabricating the same. According to an embodiment of the present invention, a capacitor comprises: a lower electrode; a dielectric layer over the lower electrode; and an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer, wherein a carbon content in the conductive carbon-containing layer is more than 5 at % and equal to or less than 10 at %.

A dielectric nanolayer capacitor comprises a nanoscale dielectric layer between a cathode layer and an anode layer. When exposed to a high electric field of at least about 0.5 GV/m at a temperature of about 200 K or less, the nanoscale dielectric layer includes an amount of trapped charge sufficient to form a Coulomb barrier for suppressing leakage current. A method of charging a dielectric nanolayer capacitor includes cooling a nanolayer capacitor comprising a nanoscale dielectric layer between a cathode layer and an anode layer to a temperature of about 200 K or less, and applying a high electric field of at least about 0.5 GV/m to the nanolayer capacitor to inject electrons into the nanoscale dielectric layer. While the nanolayer capacitor remains cooled to the temperature, the electrons are trapped in the nanoscale dielectric layer and form a Coulomb barrier to suppress leakage current.

Provided are a capacitor, an electronic device including the same, and a method of manufacturing the same, the capacitor including a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer between the dielectric and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a same crystal structure type as and a different composition from at least one of the first thin film electrode layer, the second thin film electrode layer, or the dielectric layer, the interlayer including at least one of a anionized layer or a neutral layer.

A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and having first and second surfaces opposing each other, third and fourth surfaces connecting the first and second surfaces to each other, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other; a plurality of internal electrodes disposed in the ceramic body, each exposed to the first and second surfaces and having one ends exposed to the third or fourth surface; and a first side margin portion and a second side margin portion disposed, respectively, on the first and second surfaces, in which a metal or a metal oxide is disposed in the dielectric layer, and a ratio of a diameter of the metal or the metal oxide to a thickness of the dielectric layer is 0.8 or less.

A capacitor that includes an insulating base material having a first main surface and a second main surface facing each other, the insulating base material defining first and second trenches extending from the first main surface into the base material such that first trench and the second trench overlap each other; a first conductor in the first trench; a first external electrode on the first main surface of the base material and connected to the first conductor; a second conductor in the second trench; and a second external electrode on the second main surface of the base material and connected to the second conductor.

A capacitor that includes an insulating base material having a first main surface and a second main surface facing each other, the insulating base material defining first and second trenches extending from the first main surface into the base material such that first trench and the second trench overlap each other; a first conductor in the first trench; a first external electrode on the first main surface of the base material and connected to the first conductor; a second conductor in the second trench; and a second external electrode on the second main surface of the base material and connected to the second conductor.

A multi-material electrode device is disclosed. The multi-material electrode device includes a first electrode, a dielectric material coupled to the first electrode, and a second electrode coupled to the dielectric material. In the multi-material electrode device, the first electrode and the second electrode do not include the same material.

The present invention includes a method of fabricating an integrated RF power condition capacitor with a capacitance greater than or equal to 1 nf and less than 1 mm.sup.2, and a device made by the method.

A power capacitor includes a body that defines an interior space; and at least one capacitive device in the interior space. The capacitive device includes a first electrode; and a second electrode separated from the second electrode. The power capacitor also includes a dielectric nanofluid in the interior space and between the first electrode and the second electrode, the dielectric nanofluid including: a base dielectric fluid; and nanoparticles dispersed in the base dielectric fluid.

Provided are a capacitor and a method for manufacturing the capacitor, the capacitor including: a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer, including a binary metal oxide, between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer, including an anionized layer, between the dielectric layer and at least one of the first thin-film electrode layer or the second thin-film electrode layer. The interlayer has a same type of crystal structure as and a different composition from the dielectric layer, and the anionized layer includes at least one of a monovalent cation, a divalent cation, or a trivalent cation.