A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a Cu—Kα X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3° to 2.0°.

A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as C.sub.A and the area occupied by the columnar structure B is set as C.sub.B, the relationship between C.sub.A and C.sub.B satisfies 0.4≦C.sub.B/C.sub.A≦1.1.

A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as C.sub.A and the area occupied by the columnar structure B is set as C.sub.B, the relationship between C.sub.A and C.sub.B satisfies 0.4≦C.sub.B/C.sub.A≦1.1.

A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC.sub.2O.sub.5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.198≦x≦0.375, 0.389≦y≦0.625, and x/3≦z≦x/3+1/9.

A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC.sub.2O.sub.5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.000<x≦0.281, 0.625≦y<1.000, and 0.000<z≦0.375.

A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.

A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.

A folding type capacitor includes a metal substrate wherein a through hole penetrates an inside thereof; at least one dielectric layer formed on a surface of the metal substrate and an inner peripheral surface of the through hole; and an electrode layer formed on the at least one dielectric layer, wherein the metal substrate has bending portions whose surfaces are facing each other. Thus, manufacturing process is more simplified since Al.sub.2O.sub.3 insulation layers are formed by anodizing the aluminum layer without forming the extra dielectric layers after forming the aluminum layer, so that the manufacturing cost can be reduced, and also a multi-stacked capacitor having a high capacitance and a high reliability can be provided by stacking capacitors including a plurality of aluminum oxide layers using a more simplified process.

A folding type capacitor includes a metal substrate wherein a through hole penetrates an inside thereof; at least one dielectric layer formed on a surface of the metal substrate and an inner peripheral surface of the through hole; and an electrode layer formed on the at least one dielectric layer, wherein the metal substrate has bending portions whose surfaces are facing each other. Thus, manufacturing process is more simplified since Al.sub.2O.sub.3 insulation layers are formed by anodizing the aluminum layer without forming the extra dielectric layers after forming the aluminum layer, so that the manufacturing cost can be reduced, and also a multi-stacked capacitor having a high capacitance and a high reliability can be provided by stacking capacitors including a plurality of aluminum oxide layers using a more simplified process.

A capacitor includes a dielectric layer, a first conductive layer, a second conductive layer, first inner electrodes, second inner electrodes, a first external power electrode layer, a second external power electrode layer, a first outer electrode, and a second outer electrode. The first and second inner electrodes and first and second second outer electrodes are a conductive material. The dielectric layer has through-holes connecting with a first main surface and a second main surface. The first inner electrodes are in a first set of the through-holes and connected to the first conductive layer. The second inner electrodes are in a second set of the through-holes and connected to the second conductive layer. The first outer electrode is on the first external power electrode layer and some side-faces of the dielectric layer. The second outer electrode is on the second external power electrode layer and some side-faces of the dielectric layer.