A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm.sup.−1.

A semiconductor device includes an insulation board, an electrode provided on the insulation board, a bonding layer provided on the electrode and made of a sintered body of metal particles having an average particle size of nano-order, and a semiconductor element bonded to the electrode via the bonding layer. A layer thickness of the bonding layer is greater than or equal to 220 μm and less than or equal to 700 μm.

A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

A method for connecting components involves providing an arrangement of at least two components each containing at least one metallic contact surface and a metallic sintering agent in the form of a metallic solid body having metal oxide surfaces arranged between the components and pressuring sintering the arrangement whereby metal oxide surfaces of the metallic sintering agent and the metallic contact surfaces of the components each form a joint contact surface. The pressure sintering is carried out in an atmosphere containing at least one oxidizable compound and/or the metal oxide surfaces are provided with at least one oxidizable organic compound before formation of the corresponding joint contact surface.

An object is to provide highly reliable semiconductor element bonding portion and semiconductor device that have high heat resistance and improved adhesion between a bonding material and a sealing resin. Provided is a semiconductor element bonding portion in which the semiconductor element 11 and an electrically conductive plate 123a are bonded to each other by a bonding layer 10 and the bonding layer 10 includes a metal nanoparticle sintered body 101 and a coupling agent 102 including an SH group.

An object is to provide highly reliable semiconductor element bonding portion and semiconductor device that have high heat resistance and improved adhesion between a bonding material and a sealing resin. Provided is a semiconductor element bonding portion in which the semiconductor element 11 and an electrically conductive plate 123a are bonded to each other by a bonding layer 10 and the bonding layer 10 includes a metal nanoparticle sintered body 101 and a coupling agent 102 including an SH group.

A power module includes: a plate-shaped thick copper substrate, a conductive stress relaxation metal layer disposed on the thick copper substrate, a semiconductor device disposed on the stress relaxation metal layer, and a plated layer disposed on the stress relaxation metal layer, wherein the semiconductor device is bonded to the stress relaxation metal layer via the plated layer. The thick copper substrate includes a first thick copper layer and a second thick copper layer disposed on the first thick copper layer, and the stress relaxation metal layer is disposed on the second thick copper layer. A part of the semiconductor device is embedded to be fixed to the stress relaxation metal layer. A bonded surface between the semiconductor device and the stress relaxation metal layer are integrated to each other by means of diffusion bonding or solid phase diffusion bonding.

A power module includes: a plate-shaped thick copper substrate, a conductive stress relaxation metal layer disposed on the thick copper substrate, a semiconductor device disposed on the stress relaxation metal layer, and a plated layer disposed on the stress relaxation metal layer, wherein the semiconductor device is bonded to the stress relaxation metal layer via the plated layer. The thick copper substrate includes a first thick copper layer and a second thick copper layer disposed on the first thick copper layer, and the stress relaxation metal layer is disposed on the second thick copper layer. A part of the semiconductor device is embedded to be fixed to the stress relaxation metal layer. A bonded surface between the semiconductor device and the stress relaxation metal layer are integrated to each other by means of diffusion bonding or solid phase diffusion bonding.

A method for forming a connection between two connection partners includes: forming a pre-connection layer on a first surface of a first connection partner, the pre-connection layer including a certain amount of liquid; performing a pre-connection process, thereby removing liquid from the pre-connection layer; performing photometric measurements while performing the pre-connection process, wherein performing the photometric measurements includes determining at least one photometric parameter of the pre-connection layer, wherein the at least one photometric parameter changes depending on the fluid content of the pre-connection layer; and constantly evaluating the at least one photometric parameter, wherein the pre-connection process is terminated when the at least one photometric parameter is detected to be within a desired range.

A method for forming a connection between two connection partners includes: forming a pre-connection layer on a first surface of a first connection partner, the pre-connection layer including a certain amount of liquid; performing a pre-connection process, thereby removing liquid from the pre-connection layer; performing photometric measurements while performing the pre-connection process, wherein performing the photometric measurements includes determining at least one photometric parameter of the pre-connection layer, wherein the at least one photometric parameter changes depending on the fluid content of the pre-connection layer; and constantly evaluating the at least one photometric parameter, wherein the pre-connection process is terminated when the at least one photometric parameter is detected to be within a desired range.