A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.

The disclosed multilayer ceramic capacitor includes a ceramic main body including a first surface and a second surface facing in a first direction, a third surface and a fourth surface facing in a second direction and connecting the first surface and the second surface, and a fifth surface and a sixth surface facing in a third direction and connecting the first surface and the second surface, an internal electrode disposed inside the ceramic main body, a protective layer disposed on the third surface and the fourth surface of the ceramic main body, and a connection electrode covering the protective layer. The protective layer includes a first protective layer disposed on the third surface and a second protective layer disposed on the fourth surface, and has openings positioned on the third surface and the fourth surface.

A method of fabricating an electrical-energy storage device includes: depositing a first conductive layer onto a substrate; spin-coating a photoresist layer onto the conductive layer; applying a mask to the photoresist layer and exposing the masked photoresist layer under a light, the mask having a predefined pattern; removing the un-exposed part of the photoresist layer with development; depositing a first conductive material to the photoresist layer for allowing the conductive material to fill the removed part of the photoresist layer; dissolving the photoresist layer for forming a first set of conductive structures; depositing a layer of a dielectric material to the deposited first conductive material for forming a dielectric layer thereon; depositing a second conductive material to the dielectric layer forming a second set of structures, and electroplating a third conductive material to the second set of structures.

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.