A vinylidene fluoride resin film is produced by using a film composition containing at least a vinylidene fluoride resin and organic particles. The vinylidene fluoride resin film includes a plurality of protrusions on at least one surface thereof. Among the plurality of protrusions, the number of protrusions greater than 0.10 μm in height from a flat surface at which the protrusions are not present is from 40 to 400, per 0.10 mm.sup.2 of the vinylidene fluoride resin film.

A capacitive element is manufactured by using the multilayer printed circuit board technology. The body of the element includes a layer of dielectric material interposed between two layers of conductive material arranged on opposite sides of the layer of dielectric material. Each layer of conductive material is in turn covered, on its free side, with an external covering layer. The material for making the layer of dielectric material is chosen among materials having: —a dielectric permeability ε.sub.r>1, —a dielectric rigidity k>100 kV/mm, and —a loss figure Df≤0.002. Furthermore, the dimensions of the layer of dielectric material are greater than the dimensions of the layers of conductive material, so as to limit the edge effects that might cause discharge phenomena and make the capacitive element flexible.

A film having a dielectric dissipation factor at a frequency of 1 kHz and 160° C. of 0.02% or lower and a dielectric breakdown strength at 160° C. of 400 V/μm or higher. Also disclosed is a film including at least one fluoropolymer selected from a tetrafluoroethylene/perfluoro(alkyl vinyl ether) copolymer and a tetrafluoroethylene/hexafluoropropylene copolymer, the fluoropolymer having a crystallinity of 65% or higher.

A composite film having a high dielectric permittivity engineered particles dispersed in a high breakdown strength polymer material to achieve high energy density.

A composite film having a high dielectric permittivity engineered particles dispersed in a high breakdown strength polymer material to achieve high energy density.

A film having a dielectric dissipation factor at a frequency of 1 kHz and 160 C. of 0.02% or lower and a dielectric breakdown strength at 160 C. of 400 V/m or higher. Also disclosed is a film including at least one fluoropolymer selected from a tetrafluoroethylene/perfluoro(alkyl vinyl ether) copolymer and a tetrafluoroethylene/hexafluoropropylene copolymer, the fluoropolymer having a crystallinity of 65% or higher.

The present invention provides a film having excellent heat resistance and a small difference between the permittivity at low temperatures and the permittivity at high temperatures. The present invention provides a film having a relative permittivity of 8 or more at a frequency of 1 kHz at 30 C., wherein the rate of change is 8 to +8% as calculated from a relative permittivity A at a frequency of 1 kHz at 30 C. and a relative permittivity B at a frequency of 1 kHz at 150 C. according to the following formula:
Rate of change(%)=(BA)/A100.

A capacitor includes a first electrode, a second electrode, and a dielectric layer of molecular material disposed between said first and second electrodes. The molecular material is described by the general formula:
D.sub.p-(Core)-H.sub.q,
where Core is a polarizable conductive anisometric core, having conjugated -systems, and characterized by a longitudinal axis, D and H are insulating substituents, and p and q are numbers of the D and H substituents accordingly. And Core possesses at least one dopant group that enhances polarizability.

A composite film having a high dielectric permittivity engineered particles dispersed in a high breakdown strength polymer material to achieve high energy density.

A capacitive element is manufactured by using the multilayer printed circuit board technology. The body of the element includes a layer of dielectric material interposed between two layers of conductive material arranged on opposite sides of the layer of dielectric material. Each layer of conductive material is in turn covered, on its free side, with an external covering layer. The material for making the layer of dielectric material is chosen among materials having: a dielectric permeability .sub.r>1, a dielectric rigidity k>100 kV/mm, and a loss figure Df0.002. Furthermore, the dimensions of the layer of dielectric material are greater than the dimensions of the layers of conductive material, so as to limit the edge effects that might cause discharge phenomena and make the capacitive element flexible.