Vertical field-effect transistor (VFET) devices and methods of forming the devices are provided. The methods may include forming a channel region including a first channel region and a second channel region, forming a first cavity in the substrate, forming a first bottom source/drain in the first cavity, forming a second cavity in the substrate, and forming a second bottom source/drain in the second cavity. The first cavity may expose a lower surface of the first channel region, and the second cavity may expose a lower surface of the second channel region. The method may also include after forming the first bottom source/drain and the second bottom source/drain, removing a portion of the channel region between the first channel region and the second channel region to separate the first channel region from the second channel region.

A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.

An etching solution for selectively performing an etching process on a compound represented by General Formula Si.sub.1-xGe.sub.x, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less.

The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.

The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

A method of cutting fins includes the following steps. A photomask including a snake-shape pattern is provided. A photoresist layer is formed over fins on a substrate. A photoresist pattern in the photoresist layer corresponding to the snake-shape pattern is formed by exposing and developing. The fins are cut by transferring the photoresist pattern and etching cut parts of the fins.

Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching process to reduce the height of the defect; and removing the flowable material.

A device includes a semiconductor substrate, a first fin arranged over the semiconductor substrate, and an isolation structure. The first fin includes an upper portion, a bottom portion, and an insulator layer between the upper portion and the bottom portion. A top surface of the insulator layer is wider than a bottom surface of the upper portion of the first fin. The isolation structure surrounds the bottom portion of the first fin.

Discussed is a tandem solar cell manufacturing method including etching a crystalline silicon substrate, whereby a solar cell can be obtained which does not have a pyramid-shaped defect on a surface of the substrate, inhibits the generation of a shunt through the substrate having excellent surface roughness properties, and can secure fill factor properties, the solar cell being capable of being obtained through the tandem solar cell manufacturing method. The method includes preparing a crystalline silicon substrate; performing an isotropic etching process of the substrate; and removing a saw damage on a surface of the substrate by performing an anisotropic etching process of the isotropically etched substrate.

A photonic device manufacturing method, including a step of transfer, onto a same surface of a photonic circuit previously formed inside and on top of a first substrate, of at least a first die made up of a III-V semiconductor material and of at least a second die made up of silicon nitride, the method further including a step of forming of photonic components in said at least one first and at least one second dies.

A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X.sub.1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y.sub.10 is one of —O—, —(C═O)—, —O—(C═O)—, and —(C═O)—O—, Y.sub.20 is one of —(C═O)—, —O—(C═O)—, and —(C═O)—O—, and Y.sub.11 and Y.sub.21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X.sub.1, Y.sub.11, and Y.sub.21 do not contain hydroxyl groups in structures thereof, and when X.sub.1 is a single bond, Y.sub.10 is not —O—)

H.sub.3C—Y.sub.11—Y.sub.10—X.sub.1—Y.sub.20—Y.sub.21—CH.sub.3  (1).